X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=58b27fdea6ce157b1d1c1d69bcc850487a2e7fce;hb=0be3170f71ac64329a837ad430a4561ce2bc9a90;hp=16a42e94ea72183f806c2ef9649572b7ccb97ad4;hpb=ec406716f5dd60384a4b670abdd1f712ef3c8207;p=lectures%2Flatex.git

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 16a42e9..58b27fd 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -924,7 +924,7 @@ Both DBs are tilted along the same direction remaining aligned in parallel and t
 Both C atoms form tetrahedral bonds to four Si atoms.
 However, Si atom number 1 and number 3, which are bound to the second \ci{} atom are also bound to the initial C atom.
 These four atoms of the rhomboid reside in a plane and, thus, do not match the situation in SiC.
-The Carbon atoms have a distance of \unit[2.75]{\AA}.
+The C atoms have a distance of \unit[2.75]{\AA}.
 In Fig. \ref{fig:defects:190} the relaxed structure of a \hkl[0 1 0] DB constructed at position 2 is displayed.
 An energy of \unit[-1.90]{eV} is observed.
 The initial DB and especially the C atom is pushed towards the Si atom of the second DB forming an additional fourth bond.