X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=ab8bd72b4f711998188e88a9fcd81e45c49c31d9;hb=b916b681998ce2242347c029a02f491f914c7eee;hp=bdf33d3282ef4d1c7f7e9d97a1c9dc7f820b8233;hpb=8ddd778e8511ea6a2ede75a567a2c47e1c014574;p=lectures%2Flatex.git

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index bdf33d3..ab8bd72 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -82,7 +82,7 @@ $E_{\text{f}}=3.13\,\text{eV}$\\
 \end{flushleft}
 %\hrule
 \end{center}
-\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. The Si atoms and the bonds (only for the interstitial atom) are illustrated by yellow spheres and blue lines.}
+\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. Si atoms and bonds are illustrated by yellow spheres and blue lines. Bonds of the defect atoms are drawn in red color.}
 \label{fig:defects:conf}
 \end{figure}
 The final configurations obtained after relaxation are presented in Fig. \ref{fig:defects:conf}.
@@ -183,7 +183,7 @@ Other studies & & & & & & \\
 \begin{minipage}{4cm}
 \underline{Hexagonal}\\
 $E_{\text{f}}^*=9.05\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/hex.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/hex_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -193,7 +193,7 @@ $\Rightarrow$
 \begin{minipage}{4cm}
 \underline{\hkl<1 0 0>}\\
 $E_{\text{f}}=3.88\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/100.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/100_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.5cm}
 \hfill
@@ -201,12 +201,12 @@ $E_{\text{f}}=3.88\,\text{eV}$\\
 \begin{minipage}{5cm}
 \underline{Tetrahedral}\\
 $E_{\text{f}}=6.09\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/tet.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/tet_bonds.eps}
 \end{minipage}\\[0.2cm]
 \begin{minipage}{4cm}
 \underline{Bond-centered}\\
 $E_{\text{f}}^*=5.59\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/bc.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/bc_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -216,7 +216,7 @@ $\Rightarrow$
 \begin{minipage}{4cm}
 \underline{\hkl<1 1 0> dumbbell}\\
 $E_{\text{f}}=5.18\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/110.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/110_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.5cm}
 \hfill
@@ -224,11 +224,11 @@ $E_{\text{f}}=5.18\,\text{eV}$\\
 \begin{minipage}{5cm}
 \underline{Substitutional}\\
 $E_{\text{f}}=0.75\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/sub.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/sub_bonds.eps}
 \end{minipage}
 \end{flushleft}
 \end{center}
-\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. The Si/C atoms and the bonds (only for the interstitial atom) are illustrated by yellow/gray spheres and blue lines.}
+\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. Si/C atoms and bonds are illustrated by yellow/gray spheres and blue lines. Bonds of the defect atoms are drawn in red color.}
 \label{fig:defects:c_conf}
 \end{figure}