X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=ab8bd72b4f711998188e88a9fcd81e45c49c31d9;hb=fa21e465b5e59a0bf7712d90cf90369875855d2b;hp=16a42e94ea72183f806c2ef9649572b7ccb97ad4;hpb=ec406716f5dd60384a4b670abdd1f712ef3c8207;p=lectures%2Flatex.git

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 16a42e9..ab8bd72 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -46,13 +46,13 @@ Ref. \cite{leung99} & 3.31 & 3.31 & 3.43 & - & - \\
 \begin{minipage}{5cm}
 \underline{Tetrahedral}\\
 $E_{\text{f}}=3.40\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/tet.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/tet_bonds.eps}
 \end{minipage}
 \begin{minipage}{10cm}
 \underline{Hexagonal}\\[0.1cm]
 \begin{minipage}{4cm}
 $E_{\text{f}}^*=4.48\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex_a.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_a_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -61,18 +61,18 @@ $\Rightarrow$
 \end{minipage}
 \begin{minipage}{4cm}
 $E_{\text{f}}=3.96\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_bonds.eps}
 \end{minipage}
 \end{minipage}\\[0.2cm]
 \begin{minipage}{5cm}
 \underline{\hkl<1 0 0> dumbbell}\\
 $E_{\text{f}}=5.42\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/100.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/100_bonds.eps}
 \end{minipage}
 \begin{minipage}{5cm}
 \underline{\hkl<1 1 0> dumbbell}\\
 $E_{\text{f}}=4.39\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/110.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/110_bonds.eps}
 \end{minipage}
 \begin{minipage}{5cm}
 \underline{Vacancy}\\
@@ -82,7 +82,7 @@ $E_{\text{f}}=3.13\,\text{eV}$\\
 \end{flushleft}
 %\hrule
 \end{center}
-\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. The Si atoms and the bonds (only for the interstitial atom) are illustrated by yellow spheres and blue lines.}
+\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. Si atoms and bonds are illustrated by yellow spheres and blue lines. Bonds of the defect atoms are drawn in red color.}
 \label{fig:defects:conf}
 \end{figure}
 The final configurations obtained after relaxation are presented in Fig. \ref{fig:defects:conf}.
@@ -183,7 +183,7 @@ Other studies & & & & & & \\
 \begin{minipage}{4cm}
 \underline{Hexagonal}\\
 $E_{\text{f}}^*=9.05\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/hex.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/hex_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -193,7 +193,7 @@ $\Rightarrow$
 \begin{minipage}{4cm}
 \underline{\hkl<1 0 0>}\\
 $E_{\text{f}}=3.88\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/100.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/100_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.5cm}
 \hfill
@@ -201,12 +201,12 @@ $E_{\text{f}}=3.88\,\text{eV}$\\
 \begin{minipage}{5cm}
 \underline{Tetrahedral}\\
 $E_{\text{f}}=6.09\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/tet.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/tet_bonds.eps}
 \end{minipage}\\[0.2cm]
 \begin{minipage}{4cm}
 \underline{Bond-centered}\\
 $E_{\text{f}}^*=5.59\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/bc.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/bc_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.8cm}
 \begin{center}
@@ -216,7 +216,7 @@ $\Rightarrow$
 \begin{minipage}{4cm}
 \underline{\hkl<1 1 0> dumbbell}\\
 $E_{\text{f}}=5.18\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/110.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/110_bonds.eps}
 \end{minipage}
 \begin{minipage}{0.5cm}
 \hfill
@@ -224,11 +224,11 @@ $E_{\text{f}}=5.18\,\text{eV}$\\
 \begin{minipage}{5cm}
 \underline{Substitutional}\\
 $E_{\text{f}}=0.75\,\text{eV}$\\
-\includegraphics[width=4.0cm]{c_pd_albe/sub.eps}
+\includegraphics[width=4.0cm]{c_pd_albe/sub_bonds.eps}
 \end{minipage}
 \end{flushleft}
 \end{center}
-\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. The Si/C atoms and the bonds (only for the interstitial atom) are illustrated by yellow/gray spheres and blue lines.}
+\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. Si/C atoms and bonds are illustrated by yellow/gray spheres and blue lines. Bonds of the defect atoms are drawn in red color.}
 \label{fig:defects:c_conf}
 \end{figure}
 
@@ -924,7 +924,7 @@ Both DBs are tilted along the same direction remaining aligned in parallel and t
 Both C atoms form tetrahedral bonds to four Si atoms.
 However, Si atom number 1 and number 3, which are bound to the second \ci{} atom are also bound to the initial C atom.
 These four atoms of the rhomboid reside in a plane and, thus, do not match the situation in SiC.
-The Carbon atoms have a distance of \unit[2.75]{\AA}.
+The C atoms have a distance of \unit[2.75]{\AA}.
 In Fig. \ref{fig:defects:190} the relaxed structure of a \hkl[0 1 0] DB constructed at position 2 is displayed.
 An energy of \unit[-1.90]{eV} is observed.
 The initial DB and especially the C atom is pushed towards the Si atom of the second DB forming an additional fourth bond.