X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=193148b064ef95a1bfbc0fedfdfab516fd8212ed;hb=c841381d59f86fe342539b8f335d3691cedb3415;hp=280732e1a820655da35526c1a4f5cbccf01aa685;hpb=e5a527ffd89207aace56121b94e87441c0c695a4;p=lectures%2Flatex.git

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 280732e..193148b 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -98,7 +98,7 @@ Beside the mentioned electrical capabilities the mechanical stability, which is
 Among the different polytypes of SiC, the cubic phase shows a high electron mobility and the highest break down field as well as saturation drift velocity~\cite{neudeck95,wesch96}.
 In contrast to its hexagonal counterparts 3C-SiC exhibits isotropic mechanical and electronic properties.
 Additionally the smaller band gap is expected to be favorable concerning the interface state density in MOSFET devices fabricated on 3C-SiC~\cite{pensl00}.
-Thus the cubic phase is most effective for highly efficient high-performance electronic devices.
+Thus, the cubic phase is most effective for highly efficient high-performance electronic devices.
 \begin{figure}[t]
 \begin{center}
 \includegraphics[width=0.35\columnwidth]{sic_unit_cell.eps}
@@ -186,9 +186,8 @@ APB defects, which constitute the primary residual defects in thick layers, are
 However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$}~\cite{shibahara86,powell87_2}.
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions~\cite{kitabatake97}.
 % more up2date paper
-A reduction of the SF in addition to the APB defects was recently achieved growing 3C-SiC on undulant Si~\cite{nagasawa06}.
-Therefore, a Si\hkl(0 0 1) substrate is covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions.
-This eliminates APB defects via a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes, which are, thus, self-vanishing.
+A reduction of the SF in addition to the APB defects was recently achieved by growing 3C-SiC on undulant Si~\cite{nagasawa06}, i.e.\ a Si \hkl(0 0 1) substrate covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions.
+In this way, APB defects are eliminated by a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes and, thus, terminate as they connect with each other during the growth process.
 %
 By MBE, lower process temperatures than these typically employed in CVD have been realized~\cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.