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diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index f66107d..8625011 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -413,7 +413,7 @@ The precipitation mechanism based on a preceding dumbbell agglomeration as indic
 \label{fig:sic:db_agglom}
 \end{figure}
 The incorporated C atoms form C-Si dumbbells on regular Si lattice sites.
-With increasing dose and proceeding time the highly mobile dumbbells agglomerate into large clusters.
+With increasing dose and proceeding time, the highly mobile dumbbells agglomerate into large clusters.
 Finally, when the cluster size reaches a critical radius, the high interfacial energy due to the 3C-SiC/c-Si lattice misfit is overcome and precipitation occurs.
 Due to the slightly lower silicon density of 3C-SiC, excessive silicon atoms exist, which will most probably end up as self-interstitials in the c-Si matrix since there is more space than in 3C-SiC.