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 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
+In a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
+To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out.
+In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quatum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential.
+Shortcomings of the computationally efficient though less accurate classical potential approach compared to the quantum-mechanical treatment are revealed.
+The study proceeds investigating combinations of defect structures and related diffusion processes exclusively by the first-principles method.
+The applicability of the utilized bond order potential for subsequent MD simulations is discussed.
+Conclusions on the precipitation based on the DFT results are drawn.
+In the second part, classical potential MD simulations are performed, which try to directly reproduce the precipitation.
+Next to the shortcomings of the potential, quirks inherent to MD are discussed and a workaround is proposed.
+Although direct formation of SiC fails to appear, the obtained results indicate a mechanism of precipitation, which is consistent with previous quantum-mechanical conclusions as well as experimental findings.
+
+Quantum-mechanical results of intrinsic point defects in Si are in good agreement to previous theoretical work on this subject \cite{leung99,al-mushadani03}.
+The \si{} \hkl<1 1 0> DB defect is reproduced as the ground-state configuration followed by the hexagonal and tetrahedral defect.
+Spin polarized calculations are required for the \si{} \hkl<1 0 0> DB and vacancy whereas no other of the investigated intrinsic defects is affected.
+For the \si{} \hkl<1 0 0> DB, the net spin up density is localized in two caps at each of the two DB atoms perpendicularly aligned to the bonds to the other two Si atoms.
+For the vacancy, the net spin up electron density is localized in caps at the four surrounding Si atoms directed towards the vacant site.
+Results obtained by calculations utilizing the classical EA potential yield formation energies, which are of the same order of magnitude.
+However, EA predicts the tetrahedral configuration to be most stable.
+The particular problem is due to the cut-off and the fact that the second neighbors are only slightly more distant than the first neighbors within the tetrahedral configuration.
+Furthermore, the hexagonal defect structure is not stable opposed to results of the authors of the potential \cite{albe_sic_pot}.
+The obtained structure after relaxation, which is similar to the tetrahedral configuration, has a formation energy equal to the one given by the authors for the hexagonal one.
+Obviously, the authors did not check the structure after relaxation still assuming a hexagonal configuration.
+The actual structure equals the tetrahedral configuration, which is slightly displaced along the three coordinate axes.
+Variations exist with displacements along two or a single \hkl<1 0 0> direction indicating a potential artifact.
+However, finite temperature simulations are not affected by this artifact due to a low activation energy necessary for a transition into the energetically more favorable tetrahedral configuration.
+Next to the known problem of the underestimated formation energy of the tetrahedral configuration \cite{tersoff90}, the energetic sequence of the defect structures is well reproduced by the EA calculations.
+Migration barriers of \si{} investigated by quantum-mechanical calculations are found to be of the same order of magnitude than values derived in other ab initio studies \cite{bloechl93,sahli05}.
+
+HIER WEITER
+
+Defects of C in c-Si are well described by both methods.
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 Experimental studies revealed increased implantation temperatures to be more efficient than postannealing methods for the formation of topotactically aligned precipitates \cite{kimura82,eichhorn02}.
 In particular, restructuring of strong C-C bonds is affected \cite{deguchi92}, which preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements.