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diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex
index 84d10f5..88d022b 100644
--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -1,8 +1,6 @@
 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
-{\setlength{\parindent}{0pt} 
-%\paragraph{To summarize,}
 {\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
 }
@@ -32,7 +30,7 @@ The actual structure is equal to the tetrahedral configuration, which is slightl
 Variations exist with displacements along two or a single \hkl<1 0 0> direction indicating a potential artifact.
 However, finite temperature simulations are not affected by this artifact due to a low activation energy necessary for a transition into the energetically more favorable tetrahedral configuration.
 Next to the known problem of the underestimated formation energy of the tetrahedral configuration \cite{tersoff90}, the energetic sequence of the defect structures is well reproduced by the EA calculations.
-Migration barriers of \si{} investigated by quantum-mechanical calculations are found to be of the same order of magnitude than values derived in other ab initio studies \cite{bloechl93,sahli05}.
+Migration barriers of \si{} investigated by quantum-mechanical calculations are found to be of the same order of magnitude than values derived in other {\em ab initio} studies \cite{bloechl93,sahli05}.
 
 Defects of C in Si are well described by both methods.
 The \ci{} \hkl<1 0 0> DB is found to constitute the most favorable interstitial configuration in agreement with several theoretical \cite{burnard93,leary97,dal_pino93,capaz94,jones04} and experimental \cite{watkins76,song90} investigations.
@@ -128,10 +126,7 @@ Entropic contributions are assumed to be responsible for these structures at ele
 Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
 \\
 \\
-% todo - sync with respective conclusion chapter
-%
 % conclusions 2nd part
-%\paragraph{Conclusions}
 {\bf Conclusions}
 concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
 Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.