X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fsummary_outlook.tex;h=c479767a08535dad394b164a4d8e0bfb1a768bb8;hb=fdf1f976b879c9b7403c1d76c9906aa850614862;hp=8b6a6db6a166f669b24f762b35998f7b608be3e7;hpb=ec406716f5dd60384a4b670abdd1f712ef3c8207;p=lectures%2Flatex.git

diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex
index 8b6a6db..c479767 100644
--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -1,11 +1,8 @@
 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
-{\setlength{\parindent}{0pt} 
-%\paragraph{To summarize,}
 {\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
-}
 These propose the precipitation of SiC by agglomeration of \ci{} DBs followed by a sudden formation of SiC and otherwise a formation by successive accumulation of \cs{} via intermediate stretched SiC structures, which are coherent to the Si lattice.
 To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out.
 In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quantum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential.
@@ -128,10 +125,7 @@ Entropic contributions are assumed to be responsible for these structures at ele
 Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
 \\
 \\
-% todo - sync with respective conclusion chapter
-%
 % conclusions 2nd part
-%\paragraph{Conclusions}
 {\bf Conclusions}
 concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
 Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.