From: hackbard Date: Fri, 13 Aug 2010 14:10:18 +0000 (+0200) Subject: c-c 100 split X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;ds=inline;h=5abc703d940e4c8a2bdf224ec346a5e5eaae9dfb;p=lectures%2Flatex.git c-c 100 split --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 793ad39..b467de3 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -708,6 +708,26 @@ notes = "carbon pairs in si", } +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Applied Physics Letters", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", @@ -917,25 +937,31 @@ volume = "", number = "", pages = "675--678", - keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C - atom/radiation induced defect interaction;C depth - distribution;C precipitation;C-Si defects;C-Si - dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high - energy ion implantation;ion implantation;metastable - agglomerates;microdefects;positron annihilation - spectroscopy;rapid thermal annealing;secondary ion mass - spectrometry;vacancy clusters;buried - layers;carbon;elemental semiconductors;impurity-defect - interactions;ion implantation;positron - annihilation;precipitation;rapid thermal - annealing;secondary ion mass - spectra;silicon;transmission electron - microscopy;vacancies (crystal);", doi = "10.1109/IIT.1996.586497", ISSN = "", notes = "c-si agglomerates dumbbells", } +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", + collaboration = "", + title = "Carbon diffusion in silicon", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1179,8 +1205,8 @@ ISSN = "0928-4931", doi = "DOI: 10.1016/j.msec.2005.09.099", URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", - author = "J. K. N. Lindner and M. Häberlen and G. Thorwarth and - B. Stritzker", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", notes = "c int diffusion barrier", }