From: hackbard Date: Wed, 26 Jan 2011 16:10:07 +0000 (+0100) Subject: started sic on sic X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=0b8f9b2a929b9b3b1d21bca4288dd813258786ed;p=lectures%2Flatex.git started sic on sic --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 83dedd2..3f22968 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1751,6 +1751,49 @@ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } +@Article{powell90_2, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of high quality 6{H}-Si{C} epitaxial films on + vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "15", + pages = "1442--1444", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY; + TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; + DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1442/1", + doi = "10.1063/1.102492", + notes = "cvd of 6h-sic on 6h-sic", +} + +@Article{kong88_2, + author = "H. S. Kong and J. T. Glass and R. F. Davis", + collaboration = "", + title = "Chemical vapor deposition and characterization of + 6{H}-Si{C} thin films on off-axis 6{H}-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "64", + number = "5", + pages = "2672--2679", + keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED + COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON + MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL + STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR + PHASE EPITAXY; CRYSTAL ORIENTATION", + URL = "http://link.aip.org/link/?JAP/64/2672/1", + doi = "10.1063/1.341608", +} + @Article{powell90, author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. J. Choyke and J. L. Bradshaw and L. Henderson and M. @@ -1773,6 +1816,48 @@ notes = "cvd of 3c-sic on 6h-sic", } +@Article{kong88, + author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A. + Rozgonyi and K. L. More", + collaboration = "", + title = "An examination of double positioning boundaries and + interface misfit in beta-Si{C} films on alpha-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "63", + number = "8", + pages = "2645--2650", + keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING + FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN + FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION; + MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE + STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS", + URL = "http://link.aip.org/link/?JAP/63/2645/1", + doi = "10.1063/1.341004", +} + +@Article{powell91, + author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G. + Jenkins and L. G. Matus and J. W. Yang and P. Pirouz + and W. J. Choyke and L. Clemen and M. Yoganathan", + collaboration = "", + title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films + on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1991", + journal = "Applied Physics Letters", + volume = "59", + number = "3", + pages = "333--335", + keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE + PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL + MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE", + URL = "http://link.aip.org/link/?APL/59/333/1", + doi = "10.1063/1.105587", +} + @Article{yuan95, author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. Thokala and M. J. Loboda", diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index ee9f2c8..abcdd3e 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -173,9 +173,17 @@ However, the number of such defects can be reduced by off-axis growth on a Si \h This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}. By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces. In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si. -However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory. +However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory. + +The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers. +By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown. +In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}. +%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events. +Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules. +A model is suggested ... + +... diffusion of reactants in a stagnant layer. -SiC on SiC epitaxy ... \section{Ion beam synthesis of cubic silicon carbide}