From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 9 May 2011 18:57:49 +0000 (+0200)
Subject: finisched albe, go on with ensemble control
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=1edbeb59b2db2c95de26ce475e6cc82377da1813;p=lectures%2Flatex.git

finisched albe, go on with ensemble control
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 1610f9a..c0e9159 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -24,6 +24,21 @@
   doi =          "10.1103/PhysRevB.71.035211",
 }
 
+@Article{erhart04,
+  title =        "The role of thermostats in modeling vapor phase
+                 condensation of silicon nanoparticles",
+  journal =      "Applied Surface Science",
+  volume =       "226",
+  number =       "1-3",
+  pages =        "12--18",
+  year =         "2004",
+  note =         "EMRS 2003 Symposium F, Nanostructures from Clusters",
+  ISSN =         "0169-4332",
+  doi =          "DOI: 10.1016/j.apsusc.2003.11.003",
+  URL =          "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
+  author =       "Paul Erhart and Karsten Albe",
+}
+
 @Article{albe2002,
   title =        "Modeling the metal-semiconductor interaction:
                  Analytical bond-order potential for platinum-carbon",
diff --git a/posic/thesis/basics.tex b/posic/thesis/basics.tex
index 1dc0df9..0e735ee 100644
--- a/posic/thesis/basics.tex
+++ b/posic/thesis/basics.tex
@@ -204,16 +204,22 @@ Details of the Tersoff potential derivative are presented in appendix \ref{app:d
 \subsubsection{Improved analytical bond order potential}
 
 Although the Tersoff potential is one of the most widely used potentials there are some shortcomings.
-Describing the Si interaction Tersoff was unable to find a single parameter set to describe well both, bulk and surface properties.
+Describing the Si-Si interaction Tersoff was unable to find a single parameter set to describe well both, bulk and surface properties.
 Due to this and since the first approach labeled T1 \cite{tersoff_si1} turned out to be unstable \cite{dodson87}, two further parametrizations exist, T2 \cite{tersoff_si2} and T3 \cite{tersoff_si3}.
 While T2 describes well surface properties, T3 yields improved elastic constants and should be used for describing bulk properties.
 However, T3, which is used in the Si/C potential, suffers from an underestimation of the dimer binding energy.
-Similar behavior is found for the C interaction.
+Similar behavior is found for the C-C interaction.
 
-For this reason, Erhart and Albe provide a reparametrization of the Tersoff potential based on three independently fitted potentials for the Si-Si, C-C and Si-C interaction \cite{albe_sic_pot}.
-The functional form is nearly the same like the one proposed by Tersoff.
+For this reason, Erhart and Albe provide a reparametrization of the Tersoff potential based on three independently fitted parameter sets for the Si-Si, C-C and Si-C interaction \cite{albe_sic_pot}.
+The functional form is similar to the one proposed by Tersoff.
 Differences in the energy functional and the force evaluation routine are pointed out in appendix \ref{app:d_tersoff}.
-For Si ...
+Concerning Si the elastic properties of the diamond phase as well as the structure and energetics of the dimer are reproduced very well.
+The new parameter set for the C-C interaction yields improved dimer properties while at the same time delivers a description of the bulk phase similar to the Tersoff potential.
+The potential provides succeeds in the description of the low as well as high coordinated structures is provided.
+The description of elastic properties of SiC is improved with respect to the potentials available in literature.
+Defect properties are only fairly reproduced but the description is comparable to previously published potentials.
+It is claimed that the potential enables the modeling of widely different configurations and transitions among these and has recently been used to simulate the inert gas condensation of Si-C nanoparticles \cite{erhart04}.
+Therefore the Erhart/Albe (EA) potential is considered the superior analytical bond order potential to study the SiC precipitation and associated processes in Si.
 
 \subsection{Statistical ensembles}
 \label{subsection:statistical_ensembles}