From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 19 Apr 2010 16:03:23 +0000 (+0200)
Subject: start with increased temp pc
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=2d8c0065529a76ac15b8f7ac4a25408d8bf11ec8;p=lectures%2Flatex.git

start with increased temp pc
---

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index a51304e..8860ce2 100644
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -280,7 +280,32 @@ By this, bulk 3C-SiC will still result in $Q=1$ and precipitates will also reach
 However, since the quality value does not account for bond lengthes, bond angles, crystallinity or the stacking sequence high values of $Q$ not necessarily correspond to structures close to 3C-SiC.
 Structures that look promising due to high quality values need to be further investigated by other means.
 
-Figure ... shows the radial distribution of Si-C bonds and the corresponding quality paragraphs.
+\begin{figure}[!ht]
+\begin{center}
+\includegraphics[width=12cm]{tot_pc_thesis.ps}\\
+\includegraphics[width=12cm]{tot_ba.ps}
+\end{center}
+\caption[Si-C radial distribution and quality evolution for the low concentration simulations at different elevated temperatures.]{Si-C radial distribution and quality evolution for the low concentration simulations at different elevated temperatures. All structures are cooled down to $20\,^{\circ}\mathrm{C}$. Arrows in the quality plot mark the end of carbon insertion and the start of the cooling down step.}
+\label{fig:md:tot_si-c_q}
+\end{figure}
+Figure \ref{fig:md:tot_si-c_q} shows the radial distribution of Si-C bonds for different temperatures and the corresponding quality evolution as defined earlier.
+
+Cut-off vanisches, thats a nice win ...
+
+Further explanation of PC ...
+
+100 to sub configurations ...
+
+This is reflected in the qualities obtained for different temperatures.
+
+\begin{figure}[!ht]
+\begin{center}
+\includegraphics[width=12cm]{tot_pc2_thesis.ps}\\
+\includegraphics[width=12cm]{tot_pc3_thesis.ps}
+\end{center}
+\caption[C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures.]{C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures. All structures are cooled down to $20\,^{\circ}\mathrm{C}$.}
+\label{fig:md:tot_c-c_si-si}
+\end{figure}
 
 \subsection{Constructed 3C-SiC precipitate in crystalline silicon}