From: hackbard Date: Fri, 21 Sep 2012 18:10:38 +0000 (+0200) Subject: added cover txt X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=2f6fba14b8f9fb7dce4938dc7d66d8c972863b7e;p=lectures%2Flatex.git added cover txt --- diff --git a/posic/cover/pssc_cover.tex b/posic/cover/pssc_cover.tex new file mode 100644 index 0000000..b235e2c --- /dev/null +++ b/posic/cover/pssc_cover.tex @@ -0,0 +1,75 @@ +\documentclass[a4paper,11pt]{article} +\usepackage[a4paper,textheight=636pt,textwidth=442pt,includeheadfoot]{geometry} +\usepackage[english,german]{babel} +\usepackage[latin1]{inputenc} +\usepackage[T1]{fontenc} +\usepackage{amsmath} +\usepackage{ae} +\usepackage{aecompl} +\usepackage[dvips]{graphicx} +\graphicspath{{./}} +\usepackage{color} +\usepackage{pstricks} +\usepackage{pst-node} +\usepackage{rotating} + +% miller +\usepackage{miller} + +% smaller captions ... +\usepackage[small,bf]{caption} + +% units +\usepackage{units} + +% shortcuts +\newcommand{\si}{Si$_{\text{i}}${}} +\newcommand{\ci}{C$_{\text{i}}${}} +\newcommand{\cs}{C$_{\text{s}}${}} +\newcommand{\degc}[1]{\unit[#1]{$^{\circ}$C}{}} +\newcommand{\degk}[1]{\unit[#1]{K}{}} +\newcommand{\distn}[1]{\unit[#1]{nm}{}} +\newcommand{\dista}[1]{\unit[#1]{\AA}{}} +\newcommand{\perc}[1]{\unit[#1]{\%}{}} + +% hyphenation +\hyphenation{} + +% english +\selectlanguage{english} + +% author & title +\author{F. Zirkelbach, + B. Stritzker, + K. Nordlund, + W. G. Schmidt, + E. Rauls, + J. K. N. Lindner +} +\title{First-principles and empirical potential simulation study of intrinsic + and carbon-related defects in silicon} + +\begin{document} + +\selectlanguage{english} + +\maketitle + +\begin{figure}[h!] +\begin{minipage}{0.49\textwidth} +\centering +\includegraphics[width=0.95\textwidth]{pssc_cover_02}\\ +\end{minipage} +\begin{minipage}{0.49\textwidth} +\centering +\includegraphics[width=0.95\textwidth]{pssc_cover_01}\\ +\end{minipage} +\caption*{ +The cover page shows an initial C-Si \hkl[0 0 -1] dumbbell configuration in bulk Si (top left) emerging into a Si-Si \hkl[1 1 0] split interstitial configuration located next to a lattice site that is substitutionally occupied by a C atom (bottom right). +First-principles total energy calculations describing the energetics of this transition (front left) reveal a diffusion barrier of no more than \unit[0.8]{eV} for the deviation out of the ground-state configuration. +And indeed, in large systems consisting of six thousand C atoms incorporated into a Si host of a quater of a million atoms, these transitions can be observed with increasing temperature as can be seen within the shaded regions of the radial distribution function of Si-C bonds (rear right) obtained by large-scale empirical potential molecular dynamics simulations. +These results suggest an important role of substitutionally incorporated C in the silicon carbide precipitation process at elevated temperatures or for from equilibrium. +} +\end{figure} + +\end{document}