From: hackbard Date: Thu, 10 Mar 2011 11:45:00 +0000 (+0100) Subject: ibs stuff X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=308c68125cfb9d4f4fdec73185eeb2bf6c8a3dad;p=lectures%2Flatex.git ibs stuff --- diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index 77e41a2..dbc4576 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -220,9 +220,14 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory. Thus, alternative approaches to fabricate SiC have been explored. +The \ac{IBS} technique, i.e. high-dose ion implantation followed by a high-temperature annealing step, turned out to constitute a promising method to directly form compound layers of high purity and accurately controllable depth and stoichiometry. +A short chronological summary of the \ac{IBS} of SiC and its origins is presented in the following. High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}. -\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}. +\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at \ac{RT} followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}. +Implantations at different temperatures revealed a strong influences of the implantation temperature on the compound structure \cite{edelman76}. +Temperatures below \unit[500]{$^{\circ}$C} result in amorphous layers, which is transformed into polycrystalline 3C-SiC after \unit[850]{$^{\circ}$C} annealing \cite{edelman76}. +Otherwise single crystalline 3C-SiC is observed for temperatures above \unit[600]{$^{\circ}$C}. Utilized and enhanced, 30 years devel ... (-32) By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.