From: hackbard Date: Wed, 24 May 2006 14:40:36 +0000 (+0000) Subject: some updates X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=3a603fd2c4a898cb84fce07564a372f93e57935b;p=lectures%2Flatex.git some updates --- diff --git a/nlsop/poster/nlsop_ibmm2006.tex b/nlsop/poster/nlsop_ibmm2006.tex index 324c6b5..2d00cb9 100644 --- a/nlsop/poster/nlsop_ibmm2006.tex +++ b/nlsop/poster/nlsop_ibmm2006.tex @@ -167,25 +167,28 @@ \vspace*{0.2cm} \hfill % first column +%\begin{spalte} +% \begin{kasten} +% \begin{center} +% {\large{\color{blue}\underline{ABSTRACT}}} +% \end{center} +% +% abstract ... skip it +%High-dose ion implantation into solids usually leads to a disordered distribution of defects or precipitates with variable sizes. +%However materials exist for which high-dose ion irradiation at certain conditions results in periodically arranged, self-organized, nanometric amorphous inclusions. +%This has been observed for a number of ion/target combinations \cite{ommen,specht,ishimaru} which all have in common a largely reduced density of host atoms of the amorphous phase compared to the crystalline host lattice. +%A simple model explaining the phenomenon is introduced and realized in a Monte Carlo simulation code, which focuses on high dose carbon implantation into silicon. +%The simulation is able to reproduce the depth distribution observed by TEM and RBS. +%While first versions of the simulation \cite{me1,me2} just covered a limited depth region of the target in which the selforganization is observed, the new version of this simulation code presented here is able to model the whole depth region affected by the irradiation process, as can be seen in chapter 4. +%Based on simulation results a recipe is proposed for producing broad distributions of lamellar, ordered structures which, according to recent studies \cite{wong}, are the starting point for materials with high photoluminescence. +% \end{kasten} +% \begin{spalte} - \begin{kasten} - \begin{center} - {\large{\color{blue}\underline{ABSTRACT}}} - \end{center} -High-dose ion implantation into solids usually leads to a disordered distribution of defects or precipitates with variable sizes. -However materials exist for which high-dose ion irradiation at certain conditions results in periodically arranged, self-organized, nanometric amorphous inclusions. -This has been observed for a number of ion/target combinations \cite{ommen,specht,ishimaru} which all have in common a largely reduced density of host atoms of the amorphous phase compared to the crystalline host lattice. -A simple model explaining the phenomenon is introduced and realized in a Monte Carlo simulation code, which focuses on high dose carbon implantation into silicon. -The simulation is able to reproduce the depth distribution observed by TEM and RBS. -While first versions of the simulation \cite{me1,me2} just covered a limited depth region of the target in which the selforganization is observed, the new version of this simulation code presented here is able to model the whole depth region affected by the irradiation process, as can be seen in chapter 4. -Based on simulation results a recipe is proposed for producing broad distributions of lamellar, ordered structures which, according to recent studies \cite{wong}, are the starting point for materials with high photoluminescence. - \end{kasten} - \begin{kasten} - \section*{1\hspace{0.1cm}{\color{blue}Experimental observations}} + \section*{1 \hspace{0.1cm} {\color{blue}Experimental observations}} - \subsection*{1.1{\color{blue} Amorphous inclusions}} + \subsection*{1.1 {\color{blue} Amorphous inclusions}} \begin{center} \includegraphics[width=11cm]{k393abild1_e.eps} \end{center} @@ -196,7 +199,7 @@ Based on simulation results a recipe is proposed for producing broad distributio black/white: crystalline/amorphous material\\ L: amorphous lamellae, S: spherical amorphous inclusions - \subsection*{1.2{\color{blue} Carbon distribution}} + \subsection*{1.2 {\color{blue} Carbon distribution}} \begin{center} \includegraphics[width=11cm]{eftem.eps} \end{center} @@ -207,11 +210,9 @@ Based on simulation results a recipe is proposed for producing broad distributio yellow/blue: high/low concentrations of carbon \end{kasten} -\end{spalte} -% second column -\begin{spalte} + \begin{kasten} - \section*{2\hspace{0.1cm}{\color{blue}Model}} + \section*{2 \hspace{0.1cm} {\color{blue}Model}} \begin{center} \includegraphics[width=11cm]{modell_ng_e.eps} @@ -231,13 +232,14 @@ Based on simulation results a recipe is proposed for producing broad distributio $\rightarrow$ {\bf strain induced} lateral amorphization \end{itemize} \end{kasten} - +\end{spalte} +\begin{spalte} \begin{kasten} - \section*{3\hspace{0.1cm}{\color{blue}Simulation}} + \section*{3 \hspace{0.1cm} {\color{blue}Simulation}} - \subsection*{3.1{\color{blue} Discretization of the target}} + \subsection*{3.1 {\color{blue} Discretization of the target}} \begin{center} - \includegraphics[width=10cm]{gitter_e.eps} + \includegraphics[width=6cm]{gitter_e.eps} \end{center} \subsection*{3.2 {\color{blue} Simulation algorithm}} @@ -273,11 +275,7 @@ Three contributions to the amorphization process controlled by: \item {\color{blue} $p_c$} carbon induced amorphization \item {\color{red} $p_s$} stress enhanced amorphization \end{itemize} - \end{kasten} -\end{spalte} -% third column -\begin{spalte} - \begin{kasten} + \subsubsection*{3.2.2 Carbon incorporation} \begin{itemize} \item random numbers according to the @@ -287,27 +285,57 @@ Three contributions to the amorphization process controlled by: that volume \end{itemize} \subsubsection*{3.2.3 Diffusion/Sputtering} + \begin{itemize} + \item every $d_v$ steps transfer $d_r$ of the + carbon atoms of crystalline volumina to + an amorphous neighbour volume + \item do the sputter routine after $n$ steps + corresponding to $3 \, nm$ of substrat + removal + \end{itemize} \end{kasten} - +\end{spalte} +\begin{spalte} \begin{kasten} \section*{4 \hspace{0.1cm} {\color{blue}Simulation results}} + + \subsection*{4.1 {\color{blue} Comparison with experiments}} + \begin{center} + \includegraphics[width=11cm]{dosis_entwicklung_ng_e_1-2.eps} + \end{center} + \begin{center} + \includegraphics[width=11cm]{dosis_entwicklung_ng_e_2-2.eps} + \end{center} + + \subsection*{4.1 {\color{blue} Carbon distribution}} \begin{center} - foo + \includegraphics[width=11cm]{ac_cconc_ver2_e.eps} \end{center} + \end{kasten} - bar - \vspace{0.5cm} - foobar \end{spalte} % fourth column -%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% - \begin{spalte} - \begin{kasten} - \section*{5 \hspace{0.1cm} {\color{red}Fifth Section}} - \begin{center} - \includegraphics[width=10cm]{blank.ps} - \end{center} - \end{kasten} +\begin{spalte} + \begin{kasten} + \section*{5 \hspace{0.1cm} {\color{blue}Broad distribution of + lamellar structure}} + \begin{mbox} + \begin{itemize} + \item $10 \, at.\%$ constant carbon plateau + by multiple implantation steps at + energies between $180$ and $10 \, keV$ + \end{itemize} + \begin{center} + \includegraphics[width=6cm]{multiple_impl_cp.eps} + \end{center} + \begin{itemize} + \item foloowed by $2 \, MeV$ $C^+$ implantation + \end{itemize} + \begin{center} + \includegraphics[width=10cm]{multiple_impl.eps} + \end{center} + + \end{kasten} \vspace{0.5cm} \begin{kasten}