From: hackbard Date: Wed, 9 Nov 2011 10:42:10 +0000 (+0100) Subject: c sub and si i X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=4e0fba333f5b731f132ead813da07d0ebe701df9;p=lectures%2Flatex.git c sub and si i --- diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 2bf8383..9f6ceb7 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -1741,123 +1741,76 @@ Interaction along \hkl[1 1 0] \end{slide} -% continue here -\fi - \begin{slide} +\headphd {\large\bf - Defect combinations + Defect combinations of C-Si dimers and vacancies } - \footnotesize -\vspace{0.1cm} +\vspace{0.2cm} -{\bf Combinations of \ci{} \hkl[0 0 -1] and a vacancy}\\ -\begin{minipage}[t]{3cm} -\underline{Pos 2, $E_{\text{b}}=-0.59\text{ eV}$}\\ -\includegraphics[width=2.8cm]{00-1dc/0-59.eps} +\begin{minipage}[b]{2.6cm} +\begin{flushleft} +\underline{V at 2: $E_{\text{b}}=-0.59\text{ eV}$}\\[0.1cm] +\includegraphics[width=2.5cm]{00-1dc/0-59.eps} +\end{flushleft} \end{minipage} - - - -\begin{minipage}[t]{7cm} -\vspace{0.2cm} -\begin{center} - Low activation energies\\ - High activation energies for reverse processes\\ - $\Downarrow$\\ - {\color{blue}C$_{\text{sub}}$ very stable}\\ -\vspace*{0.1cm} - \hrule -\vspace*{0.1cm} - Without nearby \hkl<1 1 0> Si self-interstitial (IBS)\\ - $\Downarrow$\\ - {\color{blue}Formation of SiC by successive substitution by C} -\end{center} +\begin{minipage}[b]{7cm} +\hfill \end{minipage} +\begin{minipage}[b]{2.6cm} +\begin{flushright} +\underline{V at 3, $E_{\text{b}}=-3.14\text{ eV}$}\\[0.1cm] +\includegraphics[width=2.5cm]{00-1dc/3-14.eps} +\end{flushright} +\end{minipage}\\[0.2cm] - -\begin{minipage}[t]{3cm} -\underline{Pos 3, $E_{\text{b}}=-3.14\text{ eV}$}\\ -\includegraphics[width=2.8cm]{00-1dc/3-14.eps} +\begin{minipage}{6.5cm} +\includegraphics[width=6.0cm]{059-539.ps} +\end{minipage} +\begin{minipage}{5.7cm} +\includegraphics[width=6.0cm]{314-539.ps} \end{minipage} +\begin{pspicture}(0,0)(0,0) +\psline[linewidth=0.05cm,linecolor=gray](6.3,9.0)(6.3,0) -\framebox{ -\begin{minipage}{5.9cm} -\includegraphics[width=5.9cm]{vasp_mig/comb_mig_3-2_vac_fullct.ps}\\[0.6cm] +\rput(6.3,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linewidth=0.05cm,linecolor=gray]{ +\begin{minipage}{6.5cm} \begin{center} -\begin{picture}(0,0)(70,0) -\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_init.eps} -\end{picture} -\begin{picture}(0,0)(30,0) -\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_03.eps} -\end{picture} -\begin{picture}(0,0)(-10,0) -\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_06.eps} -\end{picture} -\begin{picture}(0,0)(-48,0) -\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_final.eps} -\end{picture} -\begin{picture}(0,0)(12.5,5) -\includegraphics[width=1cm]{100_arrow.eps} -\end{picture} -\begin{picture}(0,0)(97,-10) -\includegraphics[height=0.9cm]{001_arrow.eps} -\end{picture} -\end{center} -\vspace{0.1cm} -\end{minipage} +IBS: Impinging C creates V \& far away \si\\[0.3cm] +Low migration barrier towards C$_{\text{sub}}$\\ +\&\\ +High barrier for reverse process\\[0.3cm] +{\color{blue} +High probability of stable C$_{\text{sub}}$ configuration } -\begin{minipage}{0.3cm} -\hfill -\end{minipage} -\framebox{ -\begin{minipage}{5.9cm} -\includegraphics[width=5.9cm]{vasp_mig/comb_mig_4-2_vac_fullct.ps}\\[0.1cm] -\begin{center} -\begin{picture}(0,0)(60,0) -\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_init.eps} -\end{picture} -\begin{picture}(0,0)(25,0) -\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_03.eps} -\end{picture} -\begin{picture}(0,0)(-20,0) -\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_07.eps} -\end{picture} -\begin{picture}(0,0)(-55,0) -\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_final.eps} -\end{picture} -\begin{picture}(0,0)(12.5,5) -\includegraphics[width=1cm]{100_arrow.eps} -\end{picture} -\begin{picture}(0,0)(95,0) -\includegraphics[height=0.9cm]{001_arrow.eps} -\end{picture} \end{center} -\vspace{0.1cm} \end{minipage} -} +}}} + +\end{pspicture} \end{slide} -\end{document} -\ifnum1=0 +% continue here +\fi \begin{slide} - {\large\bf\boldmath - Combinations of substitutional C and \hkl<1 1 0> Si self-interstitials - } +\headphd +{\large\bf + Combinations of substitutional C and Si self-interstitials +} - \scriptsize +\scriptsize \begin{minipage}{6.0cm} \includegraphics[width=5.8cm]{c_sub_si110.ps} \end{minipage} -\begin{minipage}{7cm} +\begin{minipage}{6.3cm} \scriptsize \begin{itemize} \item IBS: C may displace Si\\ @@ -1878,13 +1831,10 @@ Interaction along \hkl[1 1 0] \end{center} \end{minipage} -\begin{minipage}{6.5cm} +\begin{minipage}{6.0cm} \includegraphics[width=6.0cm]{162-097.ps} -\begin{itemize} - \item Low migration barrier -\end{itemize} \end{minipage} -\begin{minipage}{6.5cm} +\begin{minipage}{6.2cm} \begin{center} Ab initio MD at \degc{900}\\ \includegraphics[width=3.3cm]{md_vasp_01.eps} @@ -1899,6 +1849,9 @@ Contribution of entropy to structural formation \end{slide} +\end{document} +\ifnum1=0 + \begin{slide} {\large\bf