From: hackbard Date: Tue, 25 Oct 2011 20:32:11 +0000 (+0200) Subject: more X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=5fbc02ac4131b38b42df5d4fd9a89b5a916dd013;p=lectures%2Flatex.git more --- diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 157894e..5716359 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -128,25 +128,35 @@ \begin{slide} -{\large\bf - Introduction --- The C/Si system\\ -} +%{\large\bf +% Phase diagram of the C/Si system\\ +%} +\vspace*{0.2cm} + +\begin{minipage}{7cm} +\includegraphics[width=6.5cm]{si-c_phase.eps} \begin{center} -\includegraphics[width=6.3cm]{si-c_phase.eps}\\ {\tiny R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959) } \end{center} \begin{pspicture}(0,0)(0,0) -\psellipse[linecolor=red,linewidth=0.1cm](6.95,3.95)(0.5,2.8) +\psellipse[linecolor=blue,linewidth=0.1cm](3.55,4.0)(0.5,2.9) \end{pspicture} +\end{minipage} +\begin{minipage}{6cm} +{\bf Phase diagram of the C/Si system}\\[0.2cm] +{\color{blue}Stoichiometric composition} +\begin{itemize} +\item only chemical stable compound +\item wide band gap semiconductor\\ + \underline{silicon carbide}, SiC +\end{itemize} +\end{minipage} \end{slide} -\end{document} -\ifnum1=0 - % motivation / properties / applications of silicon carbide \begin{slide} @@ -212,44 +222,7 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959) \end{slide} - -% contents - -\begin{slide} - -{\large\bf - Outline -} - - \begin{itemize} - \item Implantation of C in Si --- Overview of experimental observations - \item Utilized simulation techniques and modeled problems - \begin{itemize} - \item {\color{blue}Diploma thesis}\\ - \underline{Monte Carlo} simulations - modeling the selforganization process - leading to periodic arrays of nanometric amorphous SiC - precipitates - \item {\color{blue}Doctoral studies}\\ - Classical potential \underline{molecular dynamics} simulations - \ldots\\ - \underline{Density functional theory} calculations - \ldots\\[0.2cm] - \ldots on defects and SiC precipitation in Si - \end{itemize} - \item Summary / Conclusion / Outlook - \end{itemize} - -\end{slide} - - - -\end{document} - -\ifnum1=0 - - -% start of contents +% motivation \begin{slide} @@ -303,6 +276,8 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \end{slide} +% fabrication + \begin{slide} {\large\bf @@ -314,6 +289,8 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \vspace{4pt} SiC - \emph{Born from the stars, perfected on earth.} + + IBS also here! \vspace{4pt} @@ -383,6 +360,39 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \end{slide} +% contents + +\begin{slide} + +{\large\bf + Outline +} + + \begin{itemize} + \item Implantation of C in Si --- Overview of experimental observations + \item Utilized simulation techniques and modeled problems + \begin{itemize} + \item {\color{blue}Diploma thesis}\\ + \underline{Monte Carlo} simulations + modeling the selforganization process + leading to periodic arrays of nanometric amorphous SiC + precipitates + \item {\color{blue}Doctoral studies}\\ + Classical potential \underline{molecular dynamics} simulations + \ldots\\ + \underline{Density functional theory} calculations + \ldots\\[0.2cm] + \ldots on defects and SiC precipitation in Si + \end{itemize} + \item Summary / Conclusion / Outlook + \end{itemize} + +\end{slide} + + + +\end{document} + \begin{slide} {\large\bf