From: hackbard <hackbard@tx2.hackdaworld.org>
Date: Fri, 28 Oct 2011 21:56:10 +0000 (+0200)
Subject: starting IBS of SiC
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=61442ed703dca521cdf1d4f89430d1f2cd136abe;p=lectures%2Flatex.git

starting IBS of SiC
---

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index 1d5cf40..f3e3a12 100644
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -24,7 +24,7 @@
 %\usepackage{epic}
 %\usepackage{eepic}
 
-%\usepackage{layout}
+\usepackage{layout}
 
 \usepackage{graphicx}
 \graphicspath{{../img/}}
@@ -57,17 +57,16 @@
 \begin{document}
 
 \extraslideheight{10in}
-\slideframe{none}
+\slideframe{plain}
 
 \pagestyle{empty}
 
 % specify width and height
-\slidewidth 27.7cm 
-\slideheight 19.1cm 
+\slidewidth 26.3cm 
+\slideheight 19.9cm 
 
-% shift it into visual area properly
-\def\slideleftmargin{3.3cm}
-\def\slidetopmargin{0.6cm}
+% margin
+\def\slidetopmargin{-0.15cm}
 
 \newcommand{\ham}{\mathcal{H}}
 \newcommand{\pot}{\mathcal{V}}
@@ -99,11 +98,23 @@
 \newcommand{\dista}[1]{\unit[#1]{\AA}{}}
 \newcommand{\perc}[1]{\unit[#1]{\%}{}}
 
-%\layout
-
 % no vertical centering
 %\centerslidesfalse
 
+% layout check
+%\layout
+\begin{slide}
+\center
+{\Huge
+E\\
+F\\
+G\\
+A B C D E F G H G F E D C B A
+G\\
+F\\
+E\\
+}
+\end{slide}
 
 % topic
 
@@ -132,6 +143,8 @@
 \end{center}
 \end{slide}
 
+\ifnum1=0
+
 % intro
 
 \begin{slide}
@@ -142,7 +155,7 @@
 
 \vspace*{0.2cm}
 
-\begin{minipage}{7cm}
+\begin{minipage}{6.5cm}
 \includegraphics[width=6.5cm]{si-c_phase.eps}
 \begin{center}
 {\tiny
@@ -173,58 +186,63 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959)
 
 \begin{pspicture}(0,0)(13.5,5)
 
- \psframe*[linecolor=hb](0,0)(13.5,5)
+ \psframe*[linecolor=hb](-0.2,0)(12.9,5)
 
- \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.5,1)(7,1)(7,3)(5.5,3)
- \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.75,0.5)(8,2)(8,2)(6.75,3.5)
+ \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.2,1)(6.5,1)(6.5,3)(5.2,3)
+ \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.4,0.5)(7.7,2)(7.7,2)(6.4,3.5)
 
- \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
+ \rput[lt](0,4.6){\color{gray}PROPERTIES}
 
- \rput[lt](0.5,4){wide band gap}
- \rput[lt](0.5,3.5){high electric breakdown field}
- \rput[lt](0.5,3){good electron mobility}
- \rput[lt](0.5,2.5){high electron saturation drift velocity}
- \rput[lt](0.5,2){high thermal conductivity}
+ \rput[lt](0.3,4){wide band gap}
+ \rput[lt](0.3,3.5){high electric breakdown field}
+ \rput[lt](0.3,3){good electron mobility}
+ \rput[lt](0.3,2.5){high electron saturation drift velocity}
+ \rput[lt](0.3,2){high thermal conductivity}
 
- \rput[lt](0.5,1.5){hard and mechanically stable}
- \rput[lt](0.5,1){chemically inert}
+ \rput[lt](0.3,1.5){hard and mechanically stable}
+ \rput[lt](0.3,1){chemically inert}
 
- \rput[lt](0.5,0.5){radiation hardness}
+ \rput[lt](0.3,0.5){radiation hardness}
 
- \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
+ \rput[rt](12.7,4.6){\color{gray}APPLICATIONS}
 
- \rput[rt](13,3.85){high-temperature, high power}
- \rput[rt](13,3.5){and high-frequency}
- \rput[rt](13,3.15){electronic and optoelectronic devices}
+ \rput[rt](12.5,3.85){high-temperature, high power}
+ \rput[rt](12.5,3.5){and high-frequency}
+ \rput[rt](12.5,3.15){electronic and optoelectronic devices}
 
- \rput[rt](13,2.35){material suitable for extreme conditions}
- \rput[rt](13,2){microelectromechanical systems}
- \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
+ \rput[rt](12.5,2.35){material suitable for extreme conditions}
+ \rput[rt](12.5,2){microelectromechanical systems}
+ \rput[rt](12.5,1.65){abrasives, cutting tools, heating elements}
 
- \rput[rt](13,0.85){first wall reactor material, detectors}
- \rput[rt](13,0.5){and electronic devices for space}
+ \rput[rt](12.5,0.85){first wall reactor material, detectors}
+ \rput[rt](12.5,0.5){and electronic devices for space}
 
 \end{pspicture}
 
-\begin{picture}(0,0)(0,-162)
-\includegraphics[height=2.0cm]{3C_SiC_bs.eps}
+\begin{picture}(0,0)(5,-162)
+\includegraphics[height=2.2cm]{3C_SiC_bs.eps}
 \end{picture}
-\begin{picture}(0,0)(-130,-162)
-\includegraphics[height=2.0cm]{nasa_600c_led.eps}
+\begin{picture}(0,0)(-120,-162)
+\includegraphics[height=2.2cm]{nasa_600c_led.eps}
 \end{picture}
-\begin{picture}(0,0)(-295,-162)
-\includegraphics[height=2.0cm]{6h-sic_3c-sic.eps}
+\begin{picture}(0,0)(-270,-162)
+\includegraphics[height=2.2cm]{6h-sic_3c-sic.eps}
 \end{picture}
 %%%%
-\begin{picture}(0,0)(5,65)
+\begin{picture}(0,0)(10,65)
 \includegraphics[height=2.8cm]{sic_switch.eps}
 \end{picture}
-\begin{picture}(0,0)(-145,65)
-\includegraphics[height=2.8cm]{infineon_schottky.eps}
-\end{picture}
-\begin{picture}(0,0)(-260,65)
+%\begin{picture}(0,0)(-243,65)
+\begin{picture}(0,0)(-110,65)
 \includegraphics[height=2.8cm]{ise_99.eps}
 \end{picture}
+%\begin{picture}(0,0)(-135,65)
+\begin{picture}(0,0)(-100,65)
+\includegraphics[height=1.2cm]{infineon_schottky.eps}
+\end{picture}
+\begin{picture}(0,0)(-233,65)
+\includegraphics[height=2.8cm]{solar_car.eps}
+\end{picture}
 
 \end{slide}
 
@@ -233,12 +251,24 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959)
 \begin{slide}
 
  {\large\bf
-  Polytypes of SiC
+  Polytypes of SiC\\[0.4cm]
  }
 
- \vspace{4cm}
+\includegraphics[width=3.8cm]{cubic_hex.eps}\\
+\begin{minipage}{1.9cm}
+{\tiny cubic (twist)}
+\end{minipage}
+\begin{minipage}{2.9cm}
+{\tiny hexagonal (no twist)}
+\end{minipage}
+
+\begin{picture}(0,0)(-150,0)
+ \includegraphics[width=7cm]{polytypes.eps}
+\end{picture}
 
- \small
+\vspace{0.6cm}
+
+\footnotesize
 
 \begin{tabular}{l c c c c c c}
 \hline
@@ -254,34 +284,19 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \hline
 \end{tabular}
 
-{\tiny
- Values for $T=300$ K
-}
-
-\begin{picture}(0,0)(-160,-155)
- \includegraphics[width=7cm]{polytypes.eps}
-\end{picture}
-\begin{picture}(0,0)(-10,-185)
- \includegraphics[width=3.8cm]{cubic_hex.eps}\\
-\end{picture}
-\begin{picture}(0,0)(-10,-175)
- {\tiny cubic (twist)}
-\end{picture}
-\begin{picture}(0,0)(-60,-175)
- {\tiny hexagonal (no twist)}
-\end{picture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,3.03)(0.4,0.5)
+\psellipse[linecolor=green](5.7,2.10)(0.4,0.5)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,1.68)(0.4,0.2)
+\psellipse[linecolor=green](5.6,0.92)(0.4,0.2)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.7,1.13)(0.4,0.2)
+\psellipse[linecolor=red](10.45,0.45)(0.4,0.2)
 \end{pspicture}
 
 \end{slide}
 
+\fi
 % fabrication
 
 \begin{slide}
@@ -292,15 +307,29 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
  \small
  
- \vspace{4pt}
+ \vspace{2pt}
 
- SiC - \emph{Born from the stars, perfected on earth.}
+ {\color{gray}
+ \emph{Silicon carbide --- Born from the stars, perfected on earth.}
+ }
 
- IBS also here!
- 
- \vspace{4pt}
+\vspace{2pt}
+
+SiC thin film by MBE \& CVD
+\begin{itemize}
+ \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
+ \item \underline{Commercially available} semiconductor power devices based on
+       \underline{\foreignlanguage{greek}{a}-SiC}
+ \item Production of favored \underline{3C-SiC} material
+       \underline{less advanced}
+ \item Quality and size not yet sufficient
+\end{itemize}
+\begin{picture}(0,0)(-310,-20)
+  \includegraphics[width=2.0cm]{cree.eps}
+\end{picture}
+
+Alternative method: Ion beam synthesis of SiC in Si
 
- Conventional thin film SiC growth:
  \begin{itemize}
   \item \underline{Sublimation growth using the modified Lely method}
         \begin{itemize}
@@ -366,6 +395,9 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
+\end{document}
+\ifnum1=0
+
 % contents
 
 \begin{slide}