From: hackbard Date: Thu, 30 Sep 2010 14:53:38 +0000 (+0200) Subject: beta! X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=91f18ad8403cf3172f93b9da93c1d451a1d1cf2a;p=lectures%2Flatex.git beta! --- diff --git a/posic/publications/sic_prec.tex b/posic/publications/sic_prec.tex index 282cfcd..278bc3c 100644 --- a/posic/publications/sic_prec.tex +++ b/posic/publications/sic_prec.tex @@ -161,7 +161,7 @@ While not completely rendering impossible further, more challenging empirical po \subsection{Formation energies of C$_{\text{i}}$ and C$_{\text{s}}$-Si$_{\text{i}}$} As has been shown in a previous study\cite{zirkelbach10b}, the energetically most favorable configuration of C$_{\text{s}}$ and Si$_{\text{i}}$ is obtained for C$_{\text{s}}$ located at the neighbored lattice site along the \hkl<1 1 0> bond chain of a Si$_{\text{i}}$ \hkl<1 1 0> DB. -However the energy of formation is slightly higher than that of the C$_{\text{i}}$ \hkl<1 0 0> DB, which constitutes the ground state for a C impurity introduced into otherwise perfect c-Si. +However, the energy of formation is slightly higher than that of the C$_{\text{i}}$ \hkl<1 0 0> DB, which constitutes the ground state for a C impurity introduced into otherwise perfect c-Si. For a possible clarification of the controversial views on the participation of C$_{\text{s}}$ in the precipitation mechanism by classical potential simulations, test calculations need to ensure the proper description of the relative formation energies of combined structures of C$_{\text{s}}$ and Si$_{\text{i}}$ compared to C$_{\text{i}}$. This is particularly important since the energy of formation of C$_{\text{s}}$ is drastically underestimated by the EA potential. @@ -306,7 +306,7 @@ Arrows with dashed lines mark C-C distances resulting from C$_{\text{i}}$ \hkl<1 The continuous dashed line corresponds to the distance of C$_{\text{s}}$ and a neighbored C$_{\text{i}}$ DB. Obviously, the shift of the peak is caused by the advancing transformation of the C$_{\text{i}}$ DB into the C$_{\text{s}}$ defect. Quite high g(r) values are obtained for distances in between the continuous dashed line and the first arrow with a solid line. -For the most part these structures can be identified as configurations of C$_{\text{s}}$ with either another C atom that basically occupies a Si lattice site but is displaced by a Si interstitial residing in the very next surrounding or a C atom that nearly occupies a Si lattice site forming a defect other than the \hkl<1 0 0>-type with the Si atom. +For the most part, these structures can be identified as configurations of C$_{\text{s}}$ with either another C atom that basically occupies a Si lattice site but is displaced by a Si interstitial residing in the very next surrounding or a C atom that nearly occupies a Si lattice site forming a defect other than the \hkl<1 0 0>-type with the Si atom. Again, this is a quite promising result since the C atoms are taking the appropriate coordination as expected in 3C-SiC. Fig.~\ref{fig:v2} displays the radial distribution for high C concentrations. @@ -332,7 +332,7 @@ Nevertheless, some results likewise indicate the acceleration of other processes The increasingly pronounced Si-C peak at \unit[0.35]{nm} corresponds to the distance of a C and a Si atom interconnected by another Si atom. Additionally, the C-C peak at \unit[0.31]{nm} corresponds to the distance of two C atoms bound to a central Si atom. For both structures the C atom appears to reside on a substitutional rather than an interstitial lattice site. -However, huge amounts of damage hampers identification. +However, huge amounts of damage hamper identification. The alignment of the investigated structures to the c-Si host is lost in many cases, which suggests the necessity of much more time for structural evolution to maintain the topotactic orientation of the precipitate. \section{Summary and discussion} @@ -376,7 +376,7 @@ The associated emission of Si$_{\text{i}}$ is needed for several reasons. For the agglomeration and rearrangement of C, Si$_{\text{i}}$ is needed to turn C$_{\text{s}}$ into highly mobile C$_{\text{i}}$ again. Since the conversion of a coherent SiC structure, i.e. C$_{\text{s}}$ occupying the Si lattice sites of one of the two fcc lattices that build up the c-Si diamond lattice, into incoherent SiC is accompanied by a reduction in volume, large amounts of strain are assumed to reside in the coherent as well as at the surface of the incoherent structure. Si$_{\text{i}}$ serves either as a supply of Si atoms needed in the surrounding of the contracted precipitates or as an interstitial defect minimizing the emerging strain energy of a coherent precipitate. -The latter has been directly identified in the present simulation study, i.e. structures of two C$_{\text{s}}$ atoms with one being slightly displaced by a neighbored Si$_{\text{i}}$ atom. +The latter has been directly identified in the present simulation study, i.e. structures of two C$_{\text{s}}$ atoms and Si$_{\text{i}}$ located in the vicinity. It is, thus, concluded that precipitation occurs by successive agglomeration of C$_{\text{s}}$ as already proposed by Nejim et~al.\cite{nejim95}. This agrees well with a previous ab initio study on defects in C implanted Si\cite{zirkelbach10b}, which showed C$_{\text{s}}$ to occur in all probability.