From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Wed, 19 Jan 2011 15:58:55 +0000 (+0100)
Subject: new refs and text for sic hetero on si miscut
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=a141d46595869e132fe461227a1bc820efae3ad8;p=lectures%2Flatex.git

new refs and text for sic hetero on si miscut
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index f7a5e86..26f0608 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -3459,3 +3459,20 @@
                  Matsunami",
   notes =        "defects in 3c-sis cvd on si, anti phase boundaries",
 }
+
+@Article{desjardins96,
+  author =       "P. Desjardins and J. E. Greene",
+  collaboration = "",
+  title =        "Step-flow epitaxial growth on two-domain surfaces",
+  publisher =    "AIP",
+  year =         "1996",
+  journal =      "Journal of Applied Physics",
+  volume =       "79",
+  number =       "3",
+  pages =        "1423--1434",
+  keywords =     "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
+                 FILM GROWTH; SURFACE STRUCTURE",
+  URL =          "http://link.aip.org/link/?JAP/79/1423/1",
+  doi =          "10.1063/1.360980",
+  notes =        "apb model",
+}
diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index dd18103..354f9f5 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -168,9 +168,9 @@ During carbonization the Si surface is chemically converted into a SiC film with
 In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.
 Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{shibahara86}.
 Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{shibahara86,pirouz87}.
+APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}.
+However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}.
 
-
-off-axis \cite{shibahara86,powell87_2} ...
 resulting in carb and growth \cite{kitabatake97} ...
 
 lower temps ... to limit thermal stress due to differing expansion coefficients ...