From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 27 Jun 2011 13:44:55 +0000 (+0200)
Subject: short vers ...
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=bfb28f839680198a55dc103169b09faa107bff88;p=lectures%2Flatex.git
short vers ...
---
diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 5fe3369..b9c9742 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -108,7 +108,7 @@
title = "Effect of Carbon on the Lattice Parameter of Silicon",
publisher = "AIP",
year = "1968",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "39",
number = "9",
pages = "4365--4368",
@@ -1088,7 +1088,7 @@
silicon",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "6",
pages = "3815--3820",
@@ -1228,7 +1228,7 @@
silicon",
publisher = "AIP",
year = "1984",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "45",
number = "3",
pages = "268--269",
@@ -1248,7 +1248,7 @@
Ge[sup + ] and {C}[sup + ] implantation",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "57",
number = "22",
pages = "2345--2347",
@@ -1267,7 +1267,7 @@
title = "Metastable SiGe{C} formation by solid phase epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "63",
number = "20",
pages = "2786--2788",
@@ -1288,7 +1288,7 @@
strained layer superlattices",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "22",
pages = "2758--2760",
@@ -2150,7 +2150,7 @@
off-axis Si substrates",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "11",
pages = "823--825",
@@ -2208,7 +2208,7 @@
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "15",
pages = "1442--1444",
@@ -2229,7 +2229,7 @@
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "64",
number = "5",
pages = "2672--2679",
@@ -2273,7 +2273,7 @@
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "63",
number = "8",
pages = "2645--2650",
@@ -2295,7 +2295,7 @@
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "59",
number = "3",
pages = "333--335",
@@ -2388,7 +2388,7 @@
level using surface superstructures",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "9",
pages = "1204--1206",
@@ -2540,7 +2540,7 @@
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "67",
number = "6",
pages = "2908--2912",
@@ -2600,7 +2600,7 @@
implanted boron into silicon",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
number = "7",
pages = "416--418",
@@ -2621,7 +2621,7 @@
profiles",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "68",
number = "12",
pages = "6191--6198",
@@ -2749,7 +2749,7 @@
Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "24",
pages = "3033--3035",
@@ -2838,7 +2838,7 @@
on Si(001) by adding small amounts of carbon",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "64",
number = "25",
pages = "3440--3442",
@@ -2859,7 +2859,7 @@
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "3",
pages = "356--358",
@@ -3082,7 +3082,7 @@
by Low-Temperature Chemical Vapor Deposition",
author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "41",
number = "Part 1, No. 4B",
pages = "2472--2475",
@@ -3118,7 +3118,7 @@
y] layers on Si(001)",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "26",
pages = "3356--3358",
@@ -3140,7 +3140,7 @@
y]{C}[sub y] on Si(001)",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "80",
number = "12",
pages = "6711--6715",
@@ -4415,7 +4415,7 @@
title = "Growth and Properties of beta-Si{C} Single Crystals",
publisher = "AIP",
year = "1966",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "37",
number = "1",
pages = "333--336",
@@ -4488,7 +4488,7 @@
improved external quantum efficiency",
publisher = "AIP",
year = "1982",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "53",
number = "10",
pages = "6962--6967",
@@ -4582,7 +4582,7 @@
single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "72",
number = "13",
pages = "1632--1634",
@@ -4600,7 +4600,7 @@
title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
number = "4",
pages = "221--223",
@@ -4637,7 +4637,7 @@
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "79",
number = "3",
pages = "1423--1434",
@@ -4655,7 +4655,7 @@
carbonization of silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "3",
pages = "2070--2073",
@@ -4693,7 +4693,7 @@
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "7",
pages = "824--826",
@@ -4766,7 +4766,7 @@
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "22",
pages = "2851--2853",
@@ -4871,7 +4871,7 @@
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "11",
pages = "6615--6618",
@@ -4929,7 +4929,7 @@
title = "Defects in Carbon-Implanted Silicon",
author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
Fukuoka and Haruo Saito",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "21",
number = "Part 1, No. 2",
pages = "399--400",
@@ -4967,7 +4967,7 @@
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "77",
number = "7",
pages = "2978--2984",