From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Fri, 16 Jul 2010 21:15:25 +0000 (+0200)
Subject: foo
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=caebb70f0d66dabdef917b2563ec1742c5144441;p=lectures%2Flatex.git

foo
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 6b11b00..8556c40 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -70,6 +70,21 @@
   notes =        "sic polytypes",
 }
 
+@Article{koegler03,
+  author =       "R. Kögler and F. Eichhorn and J. R. Kaschny and A.
+                 Mücklich and H. Reuther and W. Skorupa and C. Serre and
+                 A. Perez-Rodriguez",
+  title =        "Synthesis of nano-sized Si{C} precipitates in Si by
+                 simultaneous dual-beam implantation of {C}+ and Si+
+                 ions",
+  journal =      "Applied Physics A: Materials Science \& Processing",
+  volume =       "76",
+  pages =        "827--835",
+  month =        mar,
+  year =         "2003",
+  notes =        "dual implantation, sic prec enhanced by vacancies",
+}
+
 @Book{laplace,
   author =       "P. S. de Laplace",
   title =        "Th\'eorie analytique des probabilit\'es",
@@ -2277,3 +2292,95 @@
   publisher =    "American Physical Society",
   notes =        "gga pw91 (as in vasp)",
 }
+
+@Article{baldereschi73,
+  title =        "Mean-Value Point in the Brillouin Zone",
+  author =       "A. Baldereschi",
+  journal =      "Phys. Rev. B",
+  volume =       "7",
+  number =       "12",
+  pages =        "5212--5215",
+  numpages =     "3",
+  year =         "1973",
+  month =        jun,
+  doi =          "10.1103/PhysRevB.7.5212",
+  publisher =    "American Physical Society",
+  notes =        "mean value k point",
+}
+
+@Article{zhu98,
+  title =        "Ab initio pseudopotential calculations of dopant
+                 diffusion in Si",
+  journal =      "Computational Materials Science",
+  volume =       "12",
+  number =       "4",
+  pages =        "309--318",
+  year =         "1998",
+  note =         "",
+  ISSN =         "0927-0256",
+  doi =          "DOI: 10.1016/S0927-0256(98)00023-8",
+  URL =          "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
+  author =       "Jing Zhu",
+  keywords =     "TED (transient enhanced diffusion)",
+  keywords =     "Boron dopant",
+  keywords =     "Carbon dopant",
+  keywords =     "Defect",
+  keywords =     "ab initio pseudopotential method",
+  keywords =     "Impurity cluster",
+  notes =        "binding of c to si interstitial, c in si defects",
+}
+
+@Article{nejim95,
+  author =       "A. Nejim and P. L. F. Hemment and J. Stoemenos",
+  collaboration = "",
+  title =        "Si{C} buried layer formation by ion beam synthesis at
+                 950 [degree]{C}",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Applied Physics Letters",
+  volume =       "66",
+  number =       "20",
+  pages =        "2646--2648",
+  keywords =     "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
+                 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
+                 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
+                 ELECTRON MICROSCOPY",
+  URL =          "http://link.aip.org/link/?APL/66/2646/1",
+  doi =          "10.1063/1.113112",
+  notes =        "precipitation mechanism by substitutional carbon, si
+                 self interstitials react with further implanted c",
+}
+
+@Article{guedj98,
+  author =       "C. Guedj and M. W. Dashiell and L. Kulik and J.
+                 Kolodzey and A. Hairie",
+  collaboration = "",
+  title =        "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
+                 alloys",
+  publisher =    "AIP",
+  year =         "1998",
+  journal =      "Journal of Applied Physics",
+  volume =       "84",
+  number =       "8",
+  pages =        "4631--4633",
+  keywords =     "silicon compounds; precipitation; localised modes;
+                 semiconductor epitaxial layers; infrared spectra;
+                 Fourier transform spectra; thermal stability;
+                 annealing",
+  URL =          "http://link.aip.org/link/?JAP/84/4631/1",
+  doi =          "10.1063/1.368703",
+  notes =        "coherent 3C-SiC, topotactic",
+}
+
+@Article{jones04,
+  author =       "R Jones and B J Coomer and P R Briddon",
+  title =        "Quantum mechanical modelling of defects in
+                 semiconductors",
+  journal =      "Journal of Physics: Condensed Matter",
+  volume =       "16",
+  number =       "27",
+  pages =        "S2643",
+  URL =          "http://stacks.iop.org/0953-8984/16/i=27/a=004",
+  year =         "2004",
+  notes =        "ab inito init, vibrational modes, c defect in si",
+}