From: hackbard Date: Wed, 2 Nov 2011 10:25:17 +0000 (+0100) Subject: transition to phd stuff X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=d34681fef1c976bc537b667e14d689b76af73515;p=lectures%2Flatex.git transition to phd stuff --- diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 1219e91..13c55e9 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -477,7 +477,8 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) \begin{minipage}{12cm} \includegraphics[width=9cm]{../../nlsop/img/k393abild1_e_l.eps}\\ {\scriptsize -XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si, \degc{150}, +XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si, +{\color{red}\underline{\degc{150}}}, Dose: \unit[4.3 $\times 10^{17}$]{cm$^{-2}$} } \end{minipage} @@ -577,12 +578,17 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ \end{slide} -\fi - \begin{slide} \begin{minipage}{3.7cm} -\headdiplom +\begin{pspicture}(0,0)(0,0) +\rput(1.7,0.2){\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradangle=10,gradmidpoint=1,linestyle=none]{ +\begin{minipage}{3.7cm} +\hfill +\vspace{0.7cm} +\end{minipage} +}} +\end{pspicture} {\large\bf Results } @@ -596,7 +602,7 @@ Evolution of the \ldots \item continuous\\ amorphous layer \item a/c interface - \item lamella precipitates + \item lamellar precipitates \end{itemize} \ldots reproduced!\\[1.4cm] @@ -648,7 +654,7 @@ Simulation is able to model the whole depth region\\[1.2cm] \item C accumulation in the amorphous phase / Origin of stress \end{itemize} -\begin{picture}(0,0)(-265,-30) +\begin{picture}(0,0)(-260,-50) \framebox{ \begin{minipage}{3cm} \begin{center} @@ -662,6 +668,60 @@ by simulation! } \end{picture} +\end{slide} + +\fi + +\begin{slide} + +\headphd +{\large\bf + Formation of epitaxial single crystalline 3C-SiC +} + +\footnotesize + +\vspace{0.2cm} + +\includegraphics[width=7cm]{ibs_3c-sic.eps}\\ + +\begin{itemize} + \item \underline{Implantation step 1}\\[0.1cm] + Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\ + $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \& + {\color{blue}precipitates} + \item \underline{Implantation step 2}\\[0.1cm] + Little remaining dose | \unit[180]{keV} | \degc{250}\\ + $\Rightarrow$ + Destruction/Amorphization of precipitates at layer interface + \item \underline{Annealing}\\[0.1cm] + \unit[10]{h} at \degc{1250}\\ + $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces +\end{itemize} + +\begin{pspicture}(0,0)(0,0) +\rput(10.0,4.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{ +\begin{minipage}{5.3cm} + \begin{center} + {\color{blue} + 3C-SiC precipitation\\ + not yet fully understood + } + \end{center} + \vspace*{0.1cm} + \renewcommand\labelitemi{$\Rightarrow$} + Details of the SiC precipitation + \begin{itemize} + \item significant technological progress\\ + in SiC thin film formation + \item perspectives for processes relying\\ + upon prevention of SiC precipitation + \end{itemize} +\end{minipage} +}}} +\end{pspicture} + + \end{slide} @@ -678,22 +738,6 @@ by simulation! Model displaying the formation of ordered lamellae } -\framebox{ - \begin{minipage}{6.3cm} - \begin{center} - {\color{blue} - Precipitation mechanism not yet fully understood! - } - \renewcommand\labelitemi{$\Rightarrow$} - \small - \underline{Understanding the SiC precipitation} - \begin{itemize} - \item significant technological progress in SiC thin film formation - \item perspectives for processes relying upon prevention of SiC precipitation - \end{itemize} - \end{center} - \end{minipage} -} \end{slide}