From: hackbard <hackbard@tx2.hackdaworld.org>
Date: Mon, 2 Jan 2012 21:52:09 +0000 (+0100)
Subject: a bit more ...
X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=e08a97849ebaf34c088eef126bf83fa8a4267119;p=lectures%2Flatex.git

a bit more ...
---

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index c6cb981..b26dd01 100644
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -170,7 +170,7 @@ E\\
 \centerslidesfalse
 
 % skip for preparation
-\ifnum1=0
+%\ifnum1=0
 
 % intro
 
@@ -285,18 +285,18 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \end{tabular}
 
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,2.10)(0.4,0.5)
+\psellipse[linecolor=green](5.7,2.10)(0.4,0.53)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,0.92)(0.4,0.2)
+\psellipse[linecolor=green](5.6,0.92)(0.4,0.23)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.45,0.45)(0.4,0.2)
+\psellipse[linecolor=red](10.45,0.45)(0.4,0.23)
 \end{pspicture}
 
 \end{slide}
 
-\fi
+%\fi
 
 % fabrication
 
@@ -331,10 +331,20 @@ SiC thin films by MBE \& CVD
 \begin{picture}(0,0)(-310,-20)
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
-{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
-                        and lattice paramater}
 
-\vspace{-0.2cm}
+\vspace{-0.5cm}
+
+\begin{center}
+\color{red}
+\framebox{
+{\footnotesize\color{black}
+ Mismatch in \underline{thermal expansion coeefficient}
+ and \underline{lattice parameter} w.r.t. substrate
+}
+}
+\end{center}
+
+\vspace{0.1cm}
 
 {\bf Alternative approach}\\
 Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
@@ -363,9 +373,11 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 }
 \begin{minipage}{5.5cm}
 \begin{center}
-{\small
+{\footnotesize
 No surface bending effects\\
-$\Rightarrow$ Synthesis of large area SiC films possible
+High areal homogenity\\[0.1cm]
+$\Downarrow$\\[0.1cm]
+Synthesis of large area SiC films possible
 }
 \end{center}
 \end{minipage}
@@ -438,9 +450,9 @@ $\Rightarrow$ Synthesis of large area SiC films possible
 
 \end{slide}
 
-\end{document}
+%\end{document}
 % temp
-\ifnum1=0
+%\ifnum1=0
 
 % contents
 
@@ -2298,4 +2310,4 @@ Investigation of structure \& structural evolution \ldots
 
 \end{document}
 
-\fi
+%\fi
diff --git a/posic/talks/defense.txt b/posic/talks/defense.txt
index 25514aa..ab47a0a 100644
--- a/posic/talks/defense.txt
+++ b/posic/talks/defense.txt
@@ -4,6 +4,7 @@ dear examiners, dear colleagues.
 welcome everybody to the the defense of my doctor's thesis entitled ...
 as usual, i would like to start with a small motivation,
 which in this case focuses on the materials system, SiC.
+and, thereby, approach the problem to be investigated within this study.
 
 slide 2
 
@@ -76,29 +77,41 @@ already indicates the complexity involved in the synthesis process.
 however, nowadays, much progress has been achieved in SiC thin film growth.
 indeed, commerically available semiconductor devices based on alpha SiC exist,
 although these are still extremely expensive.
-However, production of the advantageous 3c polytype material is less advanced.
+however, production of the advantageous cubic polytype material is less advanced.
 mismatches in the thermal expansion coefficient and the lattice parameter
 (with respect to the substrate) cause a considerable amount of defects,
 which is responsible for structural and electrical qualities
 that are not yet satisfactory.
 
 next to CVD and MBE, the ion beam synthesis technique, which consists of
-high dose ion implantation foolowed by a high-temperature annealing step
-turned out to constitute a promising method to form buried layers of SiC in Si.
-...
+high dose ion implantation followed by a high-temperature annealing step
+turned out to constitute a promising method to form buried layers of SiC in Si
+as indicated in this sketch.
+due to the high areal homogenity achieved in ibs
+the size is only limited by the beam scanning equipment
+and sythesized films do not exhibit surface bending effects
+in contrast these formed by cvd and mbe.
+this enables the synthesis of large are SiC films.
 
 slide 5
 
-...
+the ibs synthesis of ...
 
 and the task of this work is to gain insight into SiC precipitation in silicon.
 
 slide 6
 
-this (insight) is achieved by atomistic simulations, which are explained after the assumed precipitation mechnisms present in literature are presented ...
+supposed conv mech
+
 
 slide 7
+
+however, controversial ... exists in literature
+
 slide 8
+
+this (insight) is achieved by atomistic simulations, which are explained after the assumed precipitation mechnisms present in literature are presented ...
+
 slide 9
 slide 10
 slide 11