From: hackbard Date: Tue, 9 Aug 2011 20:25:43 +0000 (+0200) Subject: adapted captions X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=eff1caa9fe5e0c06b641d60b0599e39f57cd6c64;p=lectures%2Flatex.git adapted captions --- diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex index e6297ea..ab8bd72 100644 --- a/posic/thesis/defects.tex +++ b/posic/thesis/defects.tex @@ -82,7 +82,7 @@ $E_{\text{f}}=3.13\,\text{eV}$\\ \end{flushleft} %\hrule \end{center} -\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. The Si atoms and the bonds (only for the interstitial atom) are illustrated by yellow spheres and blue lines.} +\caption[Relaxed Si self-interstitial defect configurations obtained by classical potential calculations.]{Relaxed Si self-interstitial defect configurations obtained by classical potential calculations. Si atoms and bonds are illustrated by yellow spheres and blue lines. Bonds of the defect atoms are drawn in red color.} \label{fig:defects:conf} \end{figure} The final configurations obtained after relaxation are presented in Fig. \ref{fig:defects:conf}. @@ -228,7 +228,7 @@ $E_{\text{f}}=0.75\,\text{eV}$\\ \end{minipage} \end{flushleft} \end{center} -\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. The Si/C atoms and the bonds (only for the interstitial atom) are illustrated by yellow/gray spheres and blue lines.} +\caption[Relaxed C point defect configurations obtained by classical potential calculations.]{Relaxed C point defect configurations obtained by classical potential calculations. Si/C atoms and bonds are illustrated by yellow/gray spheres and blue lines. Bonds of the defect atoms are drawn in red color.} \label{fig:defects:c_conf} \end{figure}