From: hackbard Date: Tue, 19 Jul 2011 17:50:18 +0000 (+0200) Subject: reply on merged manuscript X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=f4b2995356db6ba54386e7f34133ea243a0aafcb;p=lectures%2Flatex.git reply on merged manuscript --- diff --git a/posic/publications/sic_prec_merge_reply01.txt b/posic/publications/sic_prec_merge_reply01.txt new file mode 100644 index 0000000..8e28fae --- /dev/null +++ b/posic/publications/sic_prec_merge_reply01.txt @@ -0,0 +1,167 @@ + +Re: BC11912 + Combined ab initio and classical potential simulation study + on the silicon carbide precipitation in silicon + by F. Zirkelbach, B. Stritzker, K. Nordlund, et al. + + +Dear Dr. Dahal, + +once again, thank you for the feedback to our submission. + +> The above manuscript has been reviewed by our referee. While we +> cannot make a definite commitment, we will probably accept your +> paper for publication, provided you make changes that we judge to be +> in accordance with the appended comments (or other satisfactory +> responses are given). + +Please find below the summary of changes and hopefully convincing +responses to the recommendations of the referee. + +-- Response to recommendations -- + +> The figures showing structures (2, 11, 14) would be improved by +> showing the bonds ? perhaps undistorted bonds in one color and those +> highly distorted by the defect in another. + +We changed figures 2 and 14 to show all bonds in blue color while +bonds of the defect atoms or atoms of interest are displayed in red +color. We are thankful to the referee since the quality of the images +showing these structures, thereby, has been improved, indeed. In +figure 11, all bonds are actually already displayed. + +-> Change 1 and 2 + +> My main feeling is that it is too long, and the sections +> particularle of the different configurations (Section IV, A-D and +> some of the discussions in section VI) include far more details than +> the reader will be interested in. If the authors would prune out +> some of the details and make the discussions more succinct, though, +> it would be vastly improved. + +With further omitting content of the manuscript - originally intended to +be presented in two separated publications - we feel that +scientifically significant results would remain unpublished. Although +we would prefere a publication as in our last submission, we revised +the addressed parts of the manuscript and omitted several sentences +and one figure as detailed below. + +-> Change 3 and 4 + +We hope to enable a publication in the Physical Review B by these +changes. + +Sincerely, + +Frank Zirkelbach + +-- Summary of changes -- + +- = removed ++ = added + +Change 1 - Additional bonds in Fig. 2 + +-\includegraphics[width=\columnwidth]{si110.eps} ++\includegraphics[width=\columnwidth]{si110_bonds.eps} + +-\includegraphics[width=\columnwidth]{sihex.eps} ++\includegraphics[width=\columnwidth]{sihex_bonds.eps} + +-\includegraphics[width=\columnwidth]{sitet.eps} ++\includegraphics[width=\columnwidth]{sitet_bonds.eps} + +-\includegraphics[width=\columnwidth]{si100.eps} ++\includegraphics[width=\columnwidth]{si100_bonds.eps} + +-\includegraphics[width=\columnwidth]{csub.eps} ++\includegraphics[width=\columnwidth]{csub_bonds.eps} + +-\includegraphics[width=\columnwidth]{c100.eps} ++\includegraphics[width=\columnwidth]{c100_bonds.eps} + +-\includegraphics[width=\columnwidth]{c110.eps} ++\includegraphics[width=\columnwidth]{c110_bonds.eps} + +-\includegraphics[width=\columnwidth]{cbc.eps} ++\includegraphics[width=\columnwidth]{cbc_bonds.eps} + +-\caption{Configurations of Si and C point defects in Si. Si and C + atoms are illustrated by yellow and gray spheres respectively. Bonds + are drawn whenever considered appropriate to ease identifying defect + structures for the reader. Dumbbell configurations are abbreviated by + DB.} ++\caption{Configurations of Si and C point defects in Si. Si and C + atoms are illustrated by yellow and gray spheres respectively. Bonds + of the defect atoms are drawn in red color. Dumbbell configurations + are abbreviated by DB.} + +Change 2 - Additional bonds + colored bonds in Fig. 14 + +-\includegraphics[width=\columnwidth]{md01.eps} ++\includegraphics[width=\columnwidth]{md01_bonds.eps} + +-\includegraphics[width=\columnwidth]{md02.eps}\\ ++\includegraphics[width=\columnwidth]{md02_bonds.eps}\\ + +-\caption{Atomic configurations of an {\em ab initio} molecular + dynamics run at \unit[900]{$^{\circ}$C} starting from a configuration + of C$_{\text{s}}$ located next to a Si$_{\text{i}}$ \hkl[1 1 0] DB + (atoms 1 and 2). Equal atoms are marked by equal numbers. Bonds are + drawn for substantial atoms only.} ++\caption{Atomic configurations of an {\em ab initio} molecular + dynamics run at \unit[900]{$^{\circ}$C} starting from a configuration + of C$_{\text{s}}$ located next to a Si$_{\text{i}}$ \hkl[1 1 0] DB + (atoms 1 and 2). Equal atoms are marked by equal numbers.} + +Change 3 - Omitted text + ++\prune{ + C$_{\text{i}}$ pairs of the \hkl<1 0 0> type have been investigated + in the first part. ++} + ++\prune{ + In the last subsection configurations of a C$_{\text{i}}$ DB with + C$_{\text{s}}$ occupying a vacant site have been investigated. + Additionally, configurations might arise in IBS, in which the + impinging C atom creates a vacant site near a C$_{\text{i}}$ DB, but + does not occupy it. +-Resulting binding energies of a C$_{\text{i}}$ DB and a nearby + vacancy are listed in the second row of Table~\ref{table:dc_c-sv}. ++Resulting} Binding energies of a C$_{\text{i}}$ DB and a nearby + vacancy are listed in the second row of Table~\ref{table:dc_c-sv}. + ++\prune{ + There are good reasons for the existence of regions exhibiting such + configurations with regard to the IBS process. + Highly energetic C atoms are able to kick out a Si atom from its + lattice site, resulting in a Si self-interstitial accompanied by a + vacant site, which might get occupied by another C atom that lost + almost all of its kinetic energy. + Provided that the first C atom, which created the V and + Si$_{\text{i}}$ pair has enough kinetic energy to escape the affected + region, the C$_{\text{s}}$-Si$_{\text{i}}$ pair can be described as a + separated defect complex. ++} + ++\prune{ + Simulations are restricted to classical potential simulations using + the procedure introduced in section \ref{meth}. ++} + +Change 3 - Omitted figure and respective text + ++\prune{ + \begin{figure} + \begin{center} + \includegraphics[width=\columnwidth]{2050.eps} + ... + \label{fig:v2as} + \end{figure} + A cross-section along the \hkl(1 -1 0) plane of the atomic structure + for a C insertion temperature of \unit[2050]{$^{\circ}$C} is shown in + Fig.~\ref{fig:v2as}. ++} + +