From e0f4be00f71b95b9b1dd2ddc3238348c89076f06 Mon Sep 17 00:00:00 2001 From: hackbard Date: Tue, 15 May 2012 22:18:03 +0200 Subject: [PATCH] prealpha --- posic/talks/emrs2012.tex | 80 +++++++++++++++++----------------------- 1 file changed, 34 insertions(+), 46 deletions(-) diff --git a/posic/talks/emrs2012.tex b/posic/talks/emrs2012.tex index b437eb1..ee03191 100644 --- a/posic/talks/emrs2012.tex +++ b/posic/talks/emrs2012.tex @@ -189,7 +189,7 @@ E\\ \centerslidesfalse % skip for preparation -\ifnum1=0 +%\ifnum1=0 % intro @@ -220,8 +220,7 @@ E\\ $\Rightarrow$ Homogeneous 3C-SiC layer \end{itemize} \begin{center} -{\color{blue} -\framebox{ +\psframebox[linecolor=blue,linewidth=0.05cm]{ \begin{minipage}{4.5cm} \color{black} \centering @@ -229,7 +228,6 @@ E\\ not yet fully understood \end{minipage} } -} \end{center} \end{minipage} \begin{minipage}{5.0cm} @@ -239,8 +237,10 @@ E\\ XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0) } \end{center} -\end{minipage}\\[0.2cm] +\end{minipage}\\[0.3cm] +\psframebox[fillstyle=solid,fillcolor=hb]{ +\begin{minipage}{12.1cm} {\bf Outline } @@ -251,6 +251,8 @@ E\\ \item C and Si self-interstitial point defects in silicon \item Silicon carbide precipitation simulations \end{itemize} +\end{minipage} +} \end{slide} @@ -804,14 +806,14 @@ $\rightarrow$ \end{minipage}\\[0.1cm] $\Delta E=\unit[0.9]{eV}$ | Experimental values: \unit[0.70--0.87]{eV}\\ $\Rightarrow$ {\color{blue}Migration mechanism identified!}\\ -Note: Change in orientation +Note: Change in orientation\\ \end{minipage} \begin{minipage}{5.4cm} \includegraphics[width=6.0cm]{00-1_0-10_vasp_s.ps} -\end{minipage}\\[0.4cm] +\end{minipage}\\[0.5cm] \begin{minipage}{6.8cm} {\bf\underline{Empirical potential}} $\quad$ -\hkl[0 0 -1] $\rightarrow$ \hkl[1 1 0] $\rightarrow$ \hkl[0 -1 0]\\ +\hkl[0 0 -1] $\rightarrow$ \hkl[1 1 0] $\rightarrow$ \hkl[0 -1 0]\\[-0.1cm] \begin{itemize} \item Transition involving \hkl[1 1 0] DB\\ (instability of BC configuration) @@ -819,10 +821,11 @@ Note: Change in orientation \item 2.4 -- 3.4 times higher than ab initio result \item After all: Change of the DB orientation \end{itemize} -\vspace{0.1cm} +\vspace{0.2cm} \begin{center} {\color{red}Drastically overestimated diffusion barrier} \end{center} +\vspace{0.4cm} \end{minipage} \begin{minipage}{5.4cm} \includegraphics[width=6.0cm]{00-1_110_0-10_mig_albe.ps} @@ -866,7 +869,7 @@ Note: Change in orientation \includegraphics[width=3.5cm]{comb_pos.eps} \end{minipage} -\vspace{0.5cm} +\vspace{0.7cm} {\bf\boldmath Combinations of \hkl<1 0 0>-type interstitials}\\[0.2cm] \begin{minipage}{6.1cm} @@ -877,12 +880,13 @@ Note: Change in orientation \item Disappearance of attractive forces\\ between two lowest separations. \end{itemize} +\vspace{0.1cm} \begin{center} {\color{blue}\ci{} agglomeration / no C clustering} \end{center} \end{minipage} -\begin{picture}(0,0)(-180,-40) +\begin{picture}(0,0)(-180,-50) \begin{minipage}{6.0cm} \scriptsize\centering Interaction along \hkl[1 1 0]\\ @@ -1109,8 +1113,6 @@ Contribution of entropy to structural formation\\[0.1cm] \end{slide} -\fi - \begin{slide} \headphd @@ -1233,7 +1235,7 @@ Limitations: \item Short range potential\\ $\Rightarrow$ overestimated diffusion barrier \end{itemize} -\vspace{0.6cm} +\vspace{0.7cm} \underline{Increased temperatures}\\[0.2cm] \cs{} dominated structure\\ \begin{pspicture}(0,0)(6.0,1.0) @@ -1250,9 +1252,9 @@ Conclusions: \begin{itemize} \item Stretched coherent SiC structures\\ $\Rightarrow$ \cs{} involved in precipitation mechanism - \item High T $\leftrightarrow$ non-equilibrium IBS conditions + \item Reduction in strain by \si{} \end{itemize} -\vspace{0.3cm} +\vspace{0.4cm} \end{minipage} @@ -1273,25 +1275,16 @@ Summary \item Empirical potential MD simulations on SiC prcipitation in Si \end{itemize} - -% conclusions -\rput(6.5,-4.0){\psframebox[fillstyle=solid,fillcolor=white,linewidth=0.1cm]{ -\begin{minipage}{9cm} \vspace{0.2cm} -\small -\begin{center} -{\color{gray}\bf Conclusions on SiC precipitation}\\[0.1cm] -{\Huge$\lightning$} {\color{red}\ci{}} --- vs --- {\color{blue}\cs{}} {\Huge$\lightning$}\\ -\end{center} + +\psframebox[linecolor=hb,fillstyle=solid,fillcolor=hb]{ +\begin{minipage}{12cm} +Conclusions on SiC precipitation $\qquad$ +{\Huge$\lightning$} {\color{red}\ci{}} --- vs --- {\color{blue}\cs{}} {\Huge$\lightning$} + \begin{itemize} -\item Stretched coherent SiC structures directly observed\\ -\psframebox[linecolor=blue,linewidth=0.05cm]{ -\begin{minipage}{7cm} -\centering -\cs{} involved in the precipitation mechanism\\ -\end{minipage} -} -\item Emission of \si{} serves several needs: +\item \cs{} involved in the precipitation mechanism +\item Role of the \si{} \begin{itemize} \item Vehicle to rearrange \cs --- [\cs{} \& \si{} $\leftrightarrow$ \ci] \item Building block for surrounding Si host \& further SiC @@ -1299,21 +1292,17 @@ Summary \ldots Si/SiC interface\\ \ldots within stretched coherent SiC structure \end{itemize} -\item Explains annealing behavior of high/low T C implantations - \begin{itemize} - \item Low T: highly mobile {\color{red}\ci} - \item High T: stable configurations of {\color{blue}\cs} - \end{itemize} -\psframebox[linecolor=blue,linewidth=0.05cm]{ -\begin{minipage}{7cm} -\centering -High T $\leftrightarrow$ IBS conditions far from equilibrium\\ -\end{minipage} -} \end{itemize} \end{minipage} +} + \vspace{0.2cm} -}} + +Further conclusions + +\begin{itemize} + \item High T $\leftrightarrow$ IBS conditions far from equilibrium +\end{itemize} \end{slide} @@ -1370,7 +1359,6 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\ - \ifnum1=0 \begin{slide} -- 2.39.2