From 2e9f029839026138444ba2c037bdf78a5e1d1f54 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 5 Oct 2009 18:25:35 +0200 Subject: [PATCH] new literature ... --- bibdb/bibdb.bib | 145 +++++++++++++++++++++++++++++++++++++++++++++++- 1 file changed, 142 insertions(+), 3 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 7118291..c6cbfd4 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,22 @@ notes = {derivation of albe bond order formalism}, } +@ARTICLE{mattoni2007, + author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.}, + title = "{Atomistic modeling of brittleness in covalent materials}", + journal = {Phys. Rev. B}, + year = 2007, + month = dec, + volume = 76, + number = 22, + pages = {224103-+}, + doi = {10.1103/PhysRevB.76.224103}, + notes = {adopted tersoff potential for Si, C, Ge ad SiC; + longe(r)-range-interactions, brittle propagation of fracture, + more available potentials, universal energy relation (uer), + minimum range model (mrm)} +} + @Article{koster2002, title = {Stress relaxation in $a-Si$ induced by ion bombardment}, author = {M. Koster, H. M. Urbassek}, @@ -85,7 +101,7 @@ notes = {velocity verlet integration algorithm equation of motion} } -@article{berendsen:3684, +@article{berendsen84, author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren and A. DiNola and J. R. Haak}, collaboration = {}, @@ -103,6 +119,36 @@ notes = {berendsen thermostat barostat} } +@article{huang95, + author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes}, + title={Molecular dynamics determination of defect energetics in beta -SiC + using three representative empirical potentials}, + journal={Modelling and Simulation in Materials Science and Engineering}, + volume={3}, + number={5}, + pages={615-627}, + url={http://stacks.iop.org/0965-0393/3/615}, + notes = {comparison of tersoff, pearson and eam for defect energetics in sic; + (m)eam parameters for sic}, + year={1995} +} + +@Article{tersoff89, + title = {Relationship between the embedded-atom method and + Tersoff potentials}, + author = {Brenner, Donald W.}, + journal = {Phys. Rev. Lett.}, + volume = {63}, + number = {9}, + pages = {1022}, + numpages = {1}, + year = {1989}, + month = {Aug}, + doi = {10.1103/PhysRevLett.63.1022}, + publisher = {American Physical Society}, + notes = {relation of tersoff and eam potential} +} + % molecular dynamics: applications @Article{batra87, @@ -154,6 +200,34 @@ pair correlation of amorphous sic, md result analyze} } +@Article{devanathan98, + title = "Computer simulation of a 10 keV Si displacement cascade in SiC", + journal = "Nuclear Instruments and Methods in Physics Research Section B: + Beam Interactions with Materials and Atoms", + volume = "141", + number = "1-4", + pages = "118 - 122", + year = "1998", + note = "", + issn = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00084-6", + author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia", + notes = {modified tersoff short range potential, ab initio 3c-sic} +} + +@Article{devanathan98_2, + title = "Displacement threshold energies in [beta]-SiC", + journal = "Journal of Nuclear Materials", + volume = "253", + number = "1-3", + pages = "47 - 52", + year = "1998", + issn = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(97)00304-8", + author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber", + notes = "modified tersoff, ab initio, combined ab initio tersoff" +} + @Article{batra87, title = {SiC/Si heteroepitaxial growth}, author = {M. Kitabatake}, @@ -169,7 +243,7 @@ @Article{tang97, title = {Intrinsic point defects in crystalline silicon: - Tight-binding molecular dynamics studiesof self-diffusion, + Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes}, author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, journal = {Phys. Rev. B}, @@ -215,6 +289,21 @@ notes = {defects in 3c-sic} } +@Article{mattoni2002, + title = {Self-interstitial trapping by carbon complexes in crystalline silicon}, + author = {Mattoni, A. and Bernardini, F. and Colombo, L. }, + journal = {Phys. Rev. B}, + volume = {66}, + number = {19}, + pages = {195214}, + numpages = {6}, + year = {2002}, + month = {Nov}, + doi = {10.1103/PhysRevB.66.195214}, + publisher = {American Physical Society}, + notes = {c in c-si, diffusion, interstitial configuration + links} +} + % ab initio @Article{leung99, @@ -233,7 +322,7 @@ notes = {nice images of the defects} } -@Article{PhysRevB.50.7439, +@Article{capazd94, title = {Identification of the migration path of interstitial carbon in silicon}, author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, @@ -249,6 +338,56 @@ notes = {carbon interstitial migration path shown, 001 c-si dumbbell} } +@Article{car84, + title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon}, + author = {Car, Roberto and Kelly, Paul J. and Oshiyama, Atsushi + and Pantelides, Sokrates T.}, + journal = {Phys. Rev. Lett.}, + volume = {52}, + number = {20}, + pages = {1814--1817}, + numpages = {3}, + year = {1984}, + month = {May}, + doi = {10.1103/PhysRevLett.52.1814}, + publisher = {American Physical Society}, + notes = {microscopic theory diffusion silicon dft migration path formation} +} + +% monte carlo md + +@Article{kelires97, + title = {Short-range order, bulk moduli, + and physical trends in c-$Si1-x$$Cx$ alloys }, + author = {Kelires, P. C. }, + journal = {Phys. Rev. B}, + volume = {55}, + number = {14}, + pages = {8784--8787}, + numpages = {3}, + year = {1997}, + month = {Apr}, + doi = {10.1103/PhysRevB.55.8784}, + publisher = {American Physical Society}, + notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist} +} + +@Article{kelires95, + title = {Monte Carlo Studies of Ternary Semiconductor Alloys: + Application to the $Si1-x-yGexCy$ System}, + author = {Kelires, P. C.}, + journal = {Phys. Rev. Lett.}, + volume = {75}, + number = {6}, + pages = {1114--1117}, + numpages = {3}, + year = {1995}, + month = {Aug}, + doi = {10.1103/PhysRevLett.75.1114}, + publisher = {American Physical Society}, + notes = {mc md, strain compensation in si ge by c insertion} +} + % experimental stuff - interstitials @Article{watkins76, -- 2.39.2