From 615bd57198790f7e2c30a5145060540b1cfb8158 Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@tx2.hackdaworld.org>
Date: Thu, 2 Sep 2010 01:31:33 +0200
Subject: [PATCH] zzZzz

---
 posic/publications/defect_combos.tex | 9 +++++++--
 1 file changed, 7 insertions(+), 2 deletions(-)

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index a14f6ce..8f3af45 100644
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -570,8 +570,13 @@ In summary, C and Si point defects in Si, combinations of these defects and diff
 It is shown that C interstitials in Si tend to agglomerate, which is mainly driven by a reduction of strain.
 Investigations of migration pathways, however, allow to conclude that C clustering fails to appear by thermally activated processes due to high activation energies of the the respective diffusion processes.
 A highly attractive interaction and a large capture radius has been identified for the C$_{\text{i}}$ \hkl<1 0 0> DB and the vacancy indicating a high probability for the formation of C$_{\text{s}}$
-In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations ...
-These findings suggest an increased ... in prec model ....
+In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations to transform into the C$_{\text{i}}$ \hkl<1 0 0> DB, which constitutes the ground state configuration for a C atom introduced into otherwise perfect Si. 
+Based on these findings conclusions on basic processes involved in the SiC precipitation in bulk Si are drawn.
+It is concluded that the precipitation process is governed by the formation of C$_{\text{s}}$ already in the initial stages.
+Agglomeration and rearrangement of C$_{\text{s}}$, however, is only possible by mobile C$_{\text{i}}$, which, thus, needs to be present at the same time.
+It is concluded that the precipitation proceeds by a successive occupation of Si lattice sites by C$_{\text{s}}$.
+However, rearrangement and agglomeration of these C atoms is only possible by forming    acting as a vehicle for ...
+
 
 % ----------------------------------------------------
 \section*{Acknowledgment}
-- 
2.39.5