From 85afbd10e17d2468c69aea662f1a1c1e9f808291 Mon Sep 17 00:00:00 2001 From: hackbard Date: Fri, 30 Apr 2004 19:03:44 +0000 Subject: [PATCH] emrs submitted version! --- nlsop/nlsop_emrs_2004.tex | 2 +- 1 file changed, 1 insertion(+), 1 deletion(-) diff --git a/nlsop/nlsop_emrs_2004.tex b/nlsop/nlsop_emrs_2004.tex index 7156e97..31f27de 100644 --- a/nlsop/nlsop_emrs_2004.tex +++ b/nlsop/nlsop_emrs_2004.tex @@ -153,7 +153,7 @@ A simple model explaining the selforganization process of lamellar, amorphous pr \item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$. \item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text). \item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM. - \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantationinto silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white. + \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white. \item Two identical simulation runs with diffusion switched off (left) and on (right). \item Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b). \item Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b). -- 2.39.2