From 49306f3bc88923d98a69410e35f1f9363628229f Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 12 Jul 2010 20:29:52 +0200 Subject: [PATCH] new si/sic interface stuff --- bibdb/bibdb.bib | 83 +++++++++++++++++++++++++++++++++++++++++++++++-- 1 file changed, 81 insertions(+), 2 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 5c711f6..2b36164 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1077,8 +1077,25 @@ monocrystals", URL = "http://link.aip.org/link/?APL/42/460/1", doi = "10.1063/1.93970", - notes = "cvd of 3c-sic on si, first time carbonization, sic - buffer layer", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino:4889, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", } @Article{powell87, @@ -1771,3 +1788,65 @@ notes = "nc-si in sio2, interface energy, nc construction, angular distribution, coordination", } + +@Article{wen:073522, + author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. + W. Liang and J. Zou", + collaboration = "", + title = "Nature of interfacial defects and their roles in + strain relaxation at highly lattice mismatched + 3{C}-Si{C}/Si (001) interface", + publisher = "AIP", + year = "2009", + journal = "Journal of Applied Physics", + volume = "106", + number = "7", + eid = "073522", + numpages = "8", + pages = "073522", + keywords = "anelastic relaxation; crystal structure; dislocations; + elemental semiconductors; semiconductor growth; + semiconductor thin films; silicon; silicon compounds; + stacking faults; wide band gap semiconductors", + URL = "http://link.aip.org/link/?JAP/106/073522/1", + doi = "10.1063/1.3234380", + notes = "sic/si interface, follow refs", +} + +@Article{kitabatake93, + author = "Makoto Kitabatake and Masahiro Deguchi and Takashi + Hirao", + collaboration = "", + title = "Simulations and experiments of Si{C} heteroepitaxial + growth on Si(001) surface", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "7", + pages = "4438--4445", + keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR + BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON; + MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION", + URL = "http://link.aip.org/link/?JAP/74/4438/1", + doi = "10.1063/1.354385", + notes = "mbe and md of sic growth on si, 4 to 5 shrinkage + model, interface", +} + +@Article{pizzagalli03, + title = "Theoretical investigations of a highly mismatched + interface: Si{C}/Si(001)", + author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra + Catellani", + journal = "Phys. Rev. B", + volume = "68", + number = "19", + pages = "195302", + numpages = "10", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.195302", + publisher = "American Physical Society", + notes = "tersoff md and ab initio sic/si interface study", +} -- 2.39.2