author = "A. R. Bean and R. C. Newman",
}
+@Article{durand99,
+ author = "F. Durand and J. Duby",
+ affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
+ title = "Carbon solubility in solid and liquid silicon—{A}
+ review with reference to eutectic equilibrium",
+ journal = "Journal of Phase Equilibria",
+ publisher = "Springer New York",
+ ISSN = "1054-9714",
+ keyword = "Chemistry and Materials Science",
+ pages = "61--63",
+ volume = "20",
+ issue = "1",
+ URL = "http://dx.doi.org/10.1361/105497199770335956",
+ note = "10.1361/105497199770335956",
+ year = "1999",
+ notes = "better c solubility limit in silicon",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
notes = "c diffusion due to si self-interstitials",
}
+@Article{fukami90,
+ author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
+ and Cary Y. Yang",
+ collaboration = "",
+ title = "Characterization of SiGe/Si heterostructures formed by
+ Ge[sup + ] and {C}[sup + ] implantation",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "57",
+ number = "22",
+ pages = "2345--2347",
+ keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
+ FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
+ SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
+ EPITAXY; CARBON IONS; GERMANIUM IONS",
+ URL = "http://link.aip.org/link/?APL/57/2345/1",
+ doi = "10.1063/1.103888",
+}
+
@Article{strane93,
author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
Doyle and S. T. Picraux and J. W. Mayer",
quasi-direct one",
}
-@Conference{powell93,
+@Article{eberl92,
+ author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
+ and F. K. LeGoues",
+ collaboration = "",
+ title = "Growth and strain compensation effects in the ternary
+ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Applied Physics Letters",
+ volume = "60",
+ number = "24",
+ pages = "3033--3035",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
+ TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
+ EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
+ STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
+ STUDIES",
+ URL = "http://link.aip.org/link/?APL/60/3033/1",
+ doi = "10.1063/1.106774",
+}
+
+@Article{powell93,
author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
Ek and S. S. Iyer",
collaboration = "",
notes = "substitutional c in si by mbe",
}
+@Article{powell93_2,
+ title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
+ of the ternary system",
+ journal = "Journal of Crystal Growth",
+ volume = "127",
+ number = "1-4",
+ pages = "425--429",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90653-E",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
+ author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
+ Iyer",
+}
+
+@Article{osten94,
+ author = "H. J. Osten",
+ title = "Modification of Growth Modes in Lattice-Mismatched
+ Epitaxial Systems: Si/Ge",
+ journal = "physica status solidi (a)",
+ volume = "145",
+ number = "2",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/pssa.2211450203",
+ doi = "10.1002/pssa.2211450203",
+ pages = "235--245",
+ year = "1994",
+}
+
+@Article{dietrich94,
+ title = "Lattice distortion in a strain-compensated
+ $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
+ author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
+ Methfessel and P. Zaumseil",
+ journal = "Phys. Rev. B",
+ volume = "49",
+ number = "24",
+ pages = "17185--17190",
+ numpages = "5",
+ year = "1994",
+ month = jun,
+ doi = "10.1103/PhysRevB.49.17185",
+ publisher = "American Physical Society",
+}
+
+@Article{osten94_2,
+ author = "H. J. Osten and E. Bugiel and P. Zaumseil",
+ collaboration = "",
+ title = "Growth of an inverse tetragonal distorted SiGe layer
+ on Si(001) by adding small amounts of carbon",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "64",
+ number = "25",
+ pages = "3440--3442",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
+ ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
+ XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
+ LATTICES",
+ URL = "http://link.aip.org/link/?APL/64/3440/1",
+ doi = "10.1063/1.111235",
+ notes = "inversely strained / distorted heterostructure",
+}
+
+@Article{iyer92,
+ author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
+ LeGoues and J. C. Tsang and F. Cardone",
+ collaboration = "",
+ title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Applied Physics Letters",
+ volume = "60",
+ number = "3",
+ pages = "356--358",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
+ EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
+ FILM GROWTH; MICROSTRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/356/1",
+ doi = "10.1063/1.106655",
+}
+
@Article{osten99,
author = "H. J. Osten and J. Griesche and S. Scalese",
collaboration = "",
notes = "enhance of electron mobility in strained si",
}
+@Article{kissinger94,
+ author = "W. Kissinger and M. Weidner and H. J. Osten and M.
+ Eichler",
+ collaboration = "",
+ title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
+ y] layers on Si(001)",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "65",
+ number = "26",
+ pages = "3356--3358",
+ keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
+ CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
+ SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
+ ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
+ URL = "http://link.aip.org/link/?APL/65/3356/1",
+ doi = "10.1063/1.112390",
+ notes = "strained si influence on optical properties",
+}
+
+@Article{osten96,
+ author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
+ Zaumseil",
+ collaboration = "",
+ title = "Substitutional versus interstitial carbon
+ incorporation during pseudomorphic growth of Si[sub 1 -
+ y]{C}[sub y] on Si(001)",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Journal of Applied Physics",
+ volume = "80",
+ number = "12",
+ pages = "6711--6715",
+ keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
+ MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
+ XRD; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/80/6711/1",
+ doi = "10.1063/1.363797",
+ notes = "mbe substitutional vs interstitial c incorporation",
+}
+
@Article{osten97,
author = "H. J. Osten and P. Gaworzewski",
collaboration = "",
projects / lectures / latex.git / blobdiff