finished ted

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index fdea406..810cb9b 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -2347,6 +2347,69 @@
   notes =        "solubility of c in c-si, si-c phase diagram",
 }
 
+@Article{hofker74,
+  author =       "W. Hofker and H. Werner and D. Oosthoek and N.
+                 Koeman",
+  affiliation =  "N. V. Philips' Gloeilampenfabrieken Philips Research
+                 Laboratories Eindhoven Netherlands Eindhoven
+                 Netherlands",
+  title =        "Boron implantations in silicon: {A} comparison of
+                 charge carrier and boron concentration profiles",
+  journal =      "Applied Physics A: Materials Science &
+                 Processing",
+  publisher =    "Springer Berlin / Heidelberg",
+  ISSN =         "0947-8396",
+  keyword =      "Physics and Astronomy",
+  pages =        "125--133",
+  volume =       "4",
+  issue =        "2",
+  URL =          "http://dx.doi.org/10.1007/BF00884267",
+  note =         "10.1007/BF00884267",
+  year =         "1974",
+  notes =        "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+  author =       "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+                 H. Kastl",
+  collaboration = "",
+  title =        "Rapid annealing and the anomalous diffusion of ion
+                 implanted boron into silicon",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Applied Physics Letters",
+  volume =       "50",
+  number =       "7",
+  pages =        "416--418",
+  keywords =     "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+                 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+                 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+  URL =          "http://link.aip.org/link/?APL/50/416/1",
+  doi =          "10.1063/1.98160",
+  notes =        "ted of boron in si",
+}
+
+@Article{cowern90,
+  author =       "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+                 Jos",
+  collaboration = "",
+  title =        "Transient diffusion of ion-implanted {B} in Si: Dose,
+                 time, and matrix dependence of atomic and electrical
+                 profiles",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "68",
+  number =       "12",
+  pages =        "6191--6198",
+  keywords =     "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+                 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+                 CRYSTALS; AMORPHIZATION",
+  URL =          "http://link.aip.org/link/?JAP/68/6191/1",
+  doi =          "10.1063/1.346910",
+  notes =        "ted of boron in si",
+}
+
 @Article{cowern96,
   author =       "N. E. B. Cowern and A. Cacciato and J. S. Custer and
                  F. W. Saris and W. Vandervorst",