% bibliography database
%
+@Article{schroedinger26,
+ author = "E. Schrödinger",
+ title = "Quantisierung als Eigenwertproblem",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "384",
+ number = "4",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19263840404",
+ doi = "10.1002/andp.19263840404",
+ pages = "361--376",
+ year = "1926",
+}
+
+@Article{bloch29,
+ author = "Felix Bloch",
+ affiliation = "Institut d. Universität f. theor. Physik Leipzig",
+ title = "Über die Quantenmechanik der Elektronen in
+ Kristallgittern",
+ journal = "Z. Phys.",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0939-7922",
+ keyword = "Physics and Astronomy",
+ pages = "555--600",
+ volume = "52",
+ issue = "7",
+ URL = "http://dx.doi.org/10.1007/BF01339455",
+ note = "10.1007/BF01339455",
+ year = "1929",
+}
+
@Article{albe_sic_pot,
author = "Paul Erhart and Karsten Albe",
title = "Analytical potential for atomistic simulations of
doi = "10.1103/PhysRevB.71.035211",
}
+@Article{erhart04,
+ title = "The role of thermostats in modeling vapor phase
+ condensation of silicon nanoparticles",
+ journal = "Appl. Surf. Sci.",
+ volume = "226",
+ number = "1-3",
+ pages = "12--18",
+ year = "2004",
+ note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2003.11.003",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
+ author = "Paul Erhart and Karsten Albe",
+}
+
@Article{albe2002,
title = "Modeling the metal-semiconductor interaction:
Analytical bond-order potential for platinum-carbon",
notes = "derivation of albe bond order formalism",
}
+@Article{newman65,
+ title = "Vibrational absorption of carbon in silicon",
+ journal = "J. Phys. Chem. Solids",
+ volume = "26",
+ number = "2",
+ pages = "373--379",
+ year = "1965",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(65)90166-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
+ author = "R. C. Newman and J. B. Willis",
+ notes = "c impurity dissolved as substitutional c in si",
+}
+
+@Article{baker68,
+ author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
+ Buschert",
+ collaboration = "",
+ title = "Effect of Carbon on the Lattice Parameter of Silicon",
+ publisher = "AIP",
+ year = "1968",
+ journal = "J. Appl. Phys.",
+ volume = "39",
+ number = "9",
+ pages = "4365--4368",
+ URL = "http://link.aip.org/link/?JAP/39/4365/1",
+ doi = "10.1063/1.1656977",
+ notes = "lattice contraction due to subst c",
+}
+
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "32",
number = "6",
pages = "1211--1219",
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
- journal = "Appl. Phys. A: Mater. Sci. Process.",
+ journal = "Appl. Phys. A",
volume = "76",
pages = "827--835",
month = mar,
year = "2003",
+ URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
notes = "dual implantation, sic prec enhanced by vacancies,
precipitation by interstitial and substitutional
carbon, both mechanisms explained + refs",
@Article{skorupa96,
title = "Carbon-mediated effects in silicon and in
silicon-related materials",
- journal = "Materials Chemistry and Physics",
+ journal = "Mater. Chem. Phys.",
volume = "44",
number = "2",
pages = "101--143",
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
Diablo",
- journal = "Comptes rendus de l'Académie des Sciences",
+ journal = "C. R. Acad. Sci.",
volume = "139",
pages = "773--786",
year = "1904",
author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
Calvin H. Carter Jr. and D. Asbury",
title = "Si{C} Seeded Boule Growth",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "3--8",
year = "1998",
entropy calculations",
}
+@Article{munro99,
+ title = "Defect migration in crystalline silicon",
+ author = "Lindsey J. Munro and David J. Wales",
+ journal = "Phys. Rev. B",
+ volume = "59",
+ number = "6",
+ pages = "3969--3980",
+ numpages = "11",
+ year = "1999",
+ month = feb,
+ doi = "10.1103/PhysRevB.59.3969",
+ publisher = "American Physical Society",
+ notes = "eigenvector following method, vacancy and interstiial
+ defect migration mechanisms",
+}
+
@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
silicon, si self interstitials, free energy",
}
+@Article{mattsson08,
+ title = "Electronic surface error in the Si interstitial
+ formation energy",
+ author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
+ Armiento",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "15",
+ pages = "155211",
+ numpages = "7",
+ year = "2008",
+ month = apr,
+ doi = "10.1103/PhysRevB.77.155211",
+ publisher = "American Physical Society",
+ notes = "si self interstitial formation energies by dft",
+}
+
@Article{goedecker02,
title = "A Fourfold Coordinated Point Defect in Silicon",
author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
@Article{bean70,
title = "Low temperature electron irradiation of silicon
containing carbon",
- journal = "Solid State Communications",
+ journal = "Solid State Commun.",
volume = "8",
number = "3",
pages = "175--177",
author = "A. R. Bean and R. C. Newman",
}
+@Article{durand99,
+ author = "F. Durand and J. Duby",
+ affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
+ title = "Carbon solubility in solid and liquid silicon—{A}
+ review with reference to eutectic equilibrium",
+ journal = "Journal of Phase Equilibria",
+ publisher = "Springer New York",
+ ISSN = "1054-9714",
+ keyword = "Chemistry and Materials Science",
+ pages = "61--63",
+ volume = "20",
+ issue = "1",
+ URL = "http://dx.doi.org/10.1361/105497199770335956",
+ note = "10.1361/105497199770335956",
+ year = "1999",
+ notes = "better c solubility limit in silicon",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
silicon",
}
+@Article{isomae93,
+ author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
+ Masao Tamura",
+ collaboration = "",
+ title = "Annealing behavior of Me{V} implanted carbon in
+ silicon",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "6",
+ pages = "3815--3820",
+ keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
+ RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
+ PROFILES",
+ URL = "http://link.aip.org/link/?JAP/74/3815/1",
+ doi = "10.1063/1.354474",
+ notes = "c at interstitial location for rt implantation in si",
+}
+
@Article{strane96,
title = "Carbon incorporation into Si at high concentrations by
ion implantation and solid phase epitaxy",
stress, avoid sic precipitation",
}
+@Article{foell77,
+ title = "The formation of swirl defects in silicon by
+ agglomeration of self-interstitials",
+ journal = "J. Cryst. Growth",
+ volume = "40",
+ number = "1",
+ pages = "90--108",
+ year = "1977",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(77)90034-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "b-swirl: si + c interstitial agglomerates, c-si
+ agglomerate",
+}
+
+@Article{foell81,
+ title = "Microdefects in silicon and their relation to point
+ defects",
+ journal = "J. Cryst. Growth",
+ volume = "52",
+ number = "Part 2",
+ pages = "907--916",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90397-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "swirl review",
+}
+
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
@InProceedings{werner96,
author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
Eichler",
- booktitle = "Ion Implantation Technology. Proceedings of the 11th
- International Conference on",
+ booktitle = "Proceedings of the 11th International Conference on
+ Ion Implantation Technology.",
title = "{TEM} investigation of {C}-Si defects in carbon
implanted silicon",
year = "1996",
notes = "c diffusion in si, kick out mechnism",
}
+@Article{kalejs84,
+ author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Self-interstitial enhanced carbon diffusion in
+ silicon",
+ publisher = "AIP",
+ year = "1984",
+ journal = "Appl. Phys. Lett.",
+ volume = "45",
+ number = "3",
+ pages = "268--269",
+ keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
+ CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
+ TEMPERATURE; IMPURITIES",
+ URL = "http://link.aip.org/link/?APL/45/268/1",
+ doi = "10.1063/1.95167",
+ notes = "c diffusion due to si self-interstitials",
+}
+
+@Article{fukami90,
+ author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
+ and Cary Y. Yang",
+ collaboration = "",
+ title = "Characterization of SiGe/Si heterostructures formed by
+ Ge[sup + ] and {C}[sup + ] implantation",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Appl. Phys. Lett.",
+ volume = "57",
+ number = "22",
+ pages = "2345--2347",
+ keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
+ FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
+ SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
+ EPITAXY; CARBON IONS; GERMANIUM IONS",
+ URL = "http://link.aip.org/link/?APL/57/2345/1",
+ doi = "10.1063/1.103888",
+}
+
+@Article{strane93,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
+ Doyle and S. T. Picraux and J. W. Mayer",
+ collaboration = "",
+ title = "Metastable SiGe{C} formation by solid phase epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Appl. Phys. Lett.",
+ volume = "63",
+ number = "20",
+ pages = "2786--2788",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
+ SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
+ ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
+ SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
+ EPITAXY; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?APL/63/2786/1",
+ doi = "10.1063/1.110334",
+}
+
+@Article{goorsky92,
+ author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
+ Legoues and J. Angilello and F. Cardone",
+ collaboration = "",
+ title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
+ strained layer superlattices",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "22",
+ pages = "2758--2760",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
+ CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
+ RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
+ DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
+ URL = "http://link.aip.org/link/?APL/60/2758/1",
+ doi = "10.1063/1.106868",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
doi = "doi:10.1016/j.nimb.2006.12.118",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Periodically arranged, selforganised, nanometric,
+ amorphous precipitates have been observed after
+ high-fluence ion implantations into solids for a number
+ of ion/target combinations at certain implantation
+ conditions. A model describing the ordering process
+ based on compressive stress exerted by the amorphous
+ inclusions as a result of the density change upon
+ amorphisation is introduced. A Monte Carlo simulation
+ code, which focuses on high-fluence carbon
+ implantations into silicon, is able to reproduce
+ experimentally observed nanolamella distributions as
+ well as the formation of continuous amorphous layers.
+ By means of simulation, the selforganisation process
+ becomes traceable and detailed information about the
+ compositional and structural state during the ordering
+ process is obtained. Based on simulation results, a
+ recipe is proposed for producing broad distributions of
+ ordered lamellar structures.",
}
@Article{zirkelbach2006,
doi = "doi:10.1016/j.nimb.2005.08.162",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "High-dose ion implantation of materials that undergo
+ drastic density change upon amorphization at certain
+ implantation conditions results in periodically
+ arranged, self-organized, nanometric configurations of
+ the amorphous phase. A simple model explaining the
+ phenomenon is introduced and implemented in a
+ Monte-Carlo simulation code. Through simulation
+ conditions for observing lamellar precipitates are
+ specified and additional information about the
+ compositional and structural state during the ordering
+ process is gained.",
}
@Article{zirkelbach2005,
doi = "doi:10.1016/j.commatsci.2004.12.016",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Ion irradiation of materials, which undergo a drastic
+ density change upon amorphization have been shown to
+ exhibit selforganized, nanometric structures of the
+ amorphous phase in the crystalline host lattice. In
+ order to better understand the process a
+ Monte-Carlo-simulation code based on a simple model is
+ developed. In the present work we focus on high-dose
+ carbon implantations into silicon. The simulation is
+ able to reproduce results gained by cross-sectional TEM
+ measurements of high-dose carbon implanted silicon.
+ Necessary conditions can be specified for the
+ self-organization process and information is gained
+ about the compositional and structural state during the
+ ordering process which is difficult to be obtained by
+ experiment.",
}
@Article{zirkelbach09,
keywords = "Nucleation",
keywords = "Defect formation",
keywords = "Molecular dynamics simulations",
+ abstract = "The precipitation process of silicon carbide in
+ heavily carbon doped silicon is not yet fully
+ understood. High resolution transmission electron
+ microscopy observations suggest that in a first step
+ carbon atoms form C-Si dumbbells on regular Si lattice
+ sites which agglomerate into large clusters. In a
+ second step, when the cluster size reaches a radius of
+ a few nm, the high interfacial energy due to the SiC/Si
+ lattice misfit of almost 20\% is overcome and the
+ precipitation occurs. By simulation, details of the
+ precipitation process can be obtained on the atomic
+ level. A recently proposed parametrization of a
+ Tersoff-like bond order potential is used to model the
+ system appropriately. Preliminary results gained by
+ molecular dynamics simulations using this potential are
+ presented.",
}
@Article{zirkelbach10,
month = sep,
doi = "10.1103/PhysRevB.82.094110",
publisher = "American Physical Society",
-}
-
-@Article{zirkelbach11a,
- title = "First principles study of defects in carbon implanted
- silicon",
- journal = "to be published",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
- author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
- and W. G. Schmidt and E. Rauls",
-}
-
-@Article{zirkelbach11b,
- title = "...",
- journal = "to be published",
+ abstract = "A comparative theoretical investigation of carbon
+ interstitials in silicon is presented. Calculations
+ using classical potentials are compared to
+ first-principles density-functional theory calculations
+ of the geometries, formation, and activation energies
+ of the carbon dumbbell interstitial, showing the
+ importance of a quantum-mechanical description of this
+ system. In contrast to previous studies, the present
+ first-principles calculations of the interstitial
+ carbon migration path yield an activation energy that
+ excellently matches the experiment. The bond-centered
+ interstitial configuration shows a net magnetization of
+ two electrons, illustrating the need for spin-polarized
+ calculations.",
+}
+
+@Article{zirkelbach11,
+ title = "Combined ab initio and classical potential simulation
+ study on the silicon carbide precipitation in silicon",
+ journal = "accepted for publication in Phys. Rev. B",
volume = "",
number = "",
pages = "",
year = "2011",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ abstract = "Atomistic simulations on the silicon carbide
+ precipitation in bulk silicon employing both, classical
+ potential and first-principles methods are presented.
+ The calculations aim at a comprehensive, microscopic
+ understanding of the precipitation mechanism in the
+ context of controversial discussions in the literature.
+ For the quantum-mechanical treatment, basic processes
+ assumed in the precipitation process are calculated in
+ feasible systems of small size. The migration mechanism
+ of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
+ 1 0> self-interstitial in otherwise defect-free silicon
+ are investigated using density functional theory
+ calculations. The influence of a nearby vacancy,
+ another carbon interstitial and a substitutional defect
+ as well as a silicon self-interstitial has been
+ investigated systematically. Interactions of various
+ combinations of defects have been characterized
+ including a couple of selected migration pathways
+ within these configurations. Almost all of the
+ investigated pairs of defects tend to agglomerate
+ allowing for a reduction in strain. The formation of
+ structures involving strong carbon-carbon bonds turns
+ out to be very unlikely. In contrast, substitutional
+ carbon occurs in all probability. A long range capture
+ radius has been observed for pairs of interstitial
+ carbon as well as interstitial carbon and vacancies. A
+ rather small capture radius is predicted for
+ substitutional carbon and silicon self-interstitials.
+ Initial assumptions regarding the precipitation
+ mechanism of silicon carbide in bulk silicon are
+ established and conformability to experimental findings
+ is discussed. Furthermore, results of the accurate
+ first-principles calculations on defects and carbon
+ diffusion in silicon are compared to results of
+ classical potential simulations revealing significant
+ limitations of the latter method. An approach to work
+ around this problem is proposed. Finally, results of
+ the classical potential molecular dynamics simulations
+ of large systems are examined, which reinforce previous
+ assumptions and give further insight into basic
+ processes involved in the silicon carbide transition.",
}
@Article{lindner95,
Rauschenbach and B. Stritzker",
title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
Layers in Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "354",
number = "",
pages = "171",
@Article{lindner96,
title = "Formation of buried epitaxial silicon carbide layers
in silicon by ion beam synthesis",
- journal = "Materials Chemistry and Physics",
+ journal = "Mater. Chem. Phys.",
volume = "46",
number = "2-3",
pages = "147--155",
@Article{calcagno96,
title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
ion implantation",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "120",
number = "1-4",
pages = "121--124",
@Article{lindner98,
title = "Mechanisms of Si{C} Formation in the Ion Beam
Synthesis of 3{C}-Si{C} Layers in Silicon",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "215--218",
year = "1998",
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
growth",
- journal = "Applied Surface Science",
+ journal = "Appl. Surf. Sci.",
volume = "238",
number = "1-4",
pages = "159--164",
title = "Organometallic vapor phase epitaxial growth of Ga{N}
on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
implantation into Si(1 1 1) substrate",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "261",
number = "2-3",
pages = "266--270",
@Article{liu_l02,
title = "Substrates for gallium nitride epitaxy",
- journal = "Materials Science and Engineering: R: Reports",
+ journal = "Mater. Sci. Eng., R",
volume = "37",
number = "3",
pages = "61--127",
@Article{takeuchi91,
title = "Growth of single crystalline Ga{N} film on Si
substrate using 3{C}-Si{C} as an intermediate layer",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "115",
number = "1-4",
pages = "634--638",
doi = "10.1063/1.1730376",
}
+@Article{horsfield96,
+ title = "Bond-order potentials: Theory and implementation",
+ author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
+ D. G. Pettifor and M. Aoki",
+ journal = "Phys. Rev. B",
+ volume = "53",
+ number = "19",
+ pages = "12694--12712",
+ numpages = "18",
+ year = "1996",
+ month = may,
+ doi = "10.1103/PhysRevB.53.12694",
+ publisher = "American Physical Society",
+}
+
+@Article{abell85,
+ title = "Empirical chemical pseudopotential theory of molecular
+ and metallic bonding",
+ author = "G. C. Abell",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "10",
+ pages = "6184--6196",
+ numpages = "12",
+ year = "1985",
+ month = may,
+ doi = "10.1103/PhysRevB.31.6184",
+ publisher = "American Physical Society",
+}
+
@Article{tersoff_si1,
title = "New empirical model for the structural properties of
silicon",
publisher = "American Physical Society",
}
+@Article{dodson87,
+ title = "Development of a many-body Tersoff-type potential for
+ silicon",
+ author = "Brian W. Dodson",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "6",
+ pages = "2795--2798",
+ numpages = "3",
+ year = "1987",
+ month = feb,
+ doi = "10.1103/PhysRevB.35.2795",
+ publisher = "American Physical Society",
+}
+
@Article{tersoff_si2,
title = "New empirical approach for the structure and energy of
covalent systems",
@Article{davis91,
author = "R. F. Davis and G. Kelner and M. Shur and J. W.
Palmour and J. A. Edmond",
- journal = "Proceedings of the IEEE",
+ journal = "Proc. IEEE",
title = "Thin film deposition and microelectronic and
optoelectronic device fabrication and characterization
in monocrystalline alpha and beta silicon carbide",
@Article{sarro00,
title = "Silicon carbide as a new {MEMS} technology",
- journal = "Sensors and Actuators A: Physical",
+ journal = "Seonsor. Actuator. A",
volume = "82",
number = "1-3",
pages = "210--218",
title = "Status of silicon carbide (Si{C}) as a wide-bandgap
semiconductor for high-temperature applications: {A}
review",
- journal = "Solid-State Electronics",
+ journal = "Solid-State Electron.",
volume = "39",
number = "10",
pages = "1409--1422",
@Article{giancarli98,
title = "Design requirements for Si{C}/Si{C} composites
structural material in fusion power reactor blankets",
- journal = "Fusion Engineering and Design",
+ journal = "Fusion Eng. Des.",
volume = "41",
number = "1-4",
pages = "165--171",
@Article{pensl93,
title = "Electrical and optical characterization of Si{C}",
- journal = "Physica B: Condensed Matter",
+ journal = "Physica B",
volume = "185",
number = "1-4",
pages = "264--283",
@Article{tairov81,
title = "General principles of growing large-size single
crystals of various silicon carbide polytypes",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 1",
pages = "146--150",
@Article{barrett91,
title = "Si{C} boule growth by sublimation vapor transport",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "109",
number = "1-4",
pages = "17--23",
@Article{barrett93,
title = "Growth of large Si{C} single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "128",
number = "1-4",
pages = "358--362",
title = "Control of polytype formation by surface energy
effects during the growth of Si{C} monocrystals by the
sublimation method",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "131",
number = "1-2",
pages = "71--74",
Single-Crystal Films on Si",
publisher = "ECS",
year = "1987",
- journal = "Journal of The Electrochemical Society",
+ journal = "J. Electrochem. Soc.",
volume = "134",
number = "6",
pages = "1558--1565",
off-axis Si substrates",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "11",
pages = "823--825",
@Article{ueda90,
title = "Crystal growth of Si{C} by step-controlled epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "104",
number = "3",
pages = "695--700",
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "15",
pages = "1442--1444",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "64",
number = "5",
pages = "2672--2679",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "63",
number = "8",
pages = "2645--2650",
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "59",
number = "3",
pages = "333--335",
@Article{kaneda87,
title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
properties of its p-n junction",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "81",
number = "1-4",
pages = "536--542",
level using surface superstructures",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "9",
pages = "1204--1206",
by ion implantation",
publisher = "Taylor \& Francis",
year = "1976",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "29",
number = "1",
pages = "13--15",
by high doses of 70 and 310 ke{V} carbon ions",
publisher = "Taylor \& Francis",
year = "1980",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "48",
number = "1",
pages = "7",
compounds formed in silicon by ion beam synthesis",
publisher = "Taylor \& Francis",
year = "1986",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "99",
number = "1",
pages = "71--81",
URL = "http://www.informaworld.com/10.1080/00337578608209614",
- notes = "ibs, comparison with sio and sin, higher temp or
- time",
+ notes = "ibs, comparison with sio and sin, higher temp or time,
+ no c redistribution",
}
@Article{reeson87,
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "67",
number = "6",
pages = "2908--2912",
notes = "solubility of c in c-si, si-c phase diagram",
}
+@Article{hofker74,
+ author = "W. Hofker and H. Werner and D. Oosthoek and N.
+ Koeman",
+ affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
+ Laboratories Eindhoven Netherlands Eindhoven
+ Netherlands",
+ title = "Boron implantations in silicon: {A} comparison of
+ charge carrier and boron concentration profiles",
+ journal = "Appl. Phys. A",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0947-8396",
+ keyword = "Physics and Astronomy",
+ pages = "125--133",
+ volume = "4",
+ issue = "2",
+ URL = "http://dx.doi.org/10.1007/BF00884267",
+ note = "10.1007/BF00884267",
+ year = "1974",
+ notes = "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+ author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+ H. Kastl",
+ collaboration = "",
+ title = "Rapid annealing and the anomalous diffusion of ion
+ implanted boron into silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "50",
+ number = "7",
+ pages = "416--418",
+ keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+ BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+ HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+ URL = "http://link.aip.org/link/?APL/50/416/1",
+ doi = "10.1063/1.98160",
+ notes = "ted of boron in si",
+}
+
+@Article{cowern90,
+ author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+ Jos",
+ collaboration = "",
+ title = "Transient diffusion of ion-implanted {B} in Si: Dose,
+ time, and matrix dependence of atomic and electrical
+ profiles",
+ publisher = "AIP",
+ year = "1990",
+ journal = "J. Appl. Phys.",
+ volume = "68",
+ number = "12",
+ pages = "6191--6198",
+ keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+ DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+ CRYSTALS; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?JAP/68/6191/1",
+ doi = "10.1063/1.346910",
+ notes = "ted of boron in si",
+}
+
@Article{cowern96,
author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
F. W. Saris and W. Vandervorst",
author = "E Kasper",
title = "Superlattices of group {IV} elements, a new
possibility to produce direct band gap material",
- journal = "Physica Scripta",
+ journal = "Phys. Scr.",
volume = "T35",
pages = "232--236",
URL = "http://stacks.iop.org/1402-4896/T35/232",
quasi-direct one",
}
+@Article{eberl92,
+ author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
+ and F. K. LeGoues",
+ collaboration = "",
+ title = "Growth and strain compensation effects in the ternary
+ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "24",
+ pages = "3033--3035",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
+ TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
+ EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
+ STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
+ STUDIES",
+ URL = "http://link.aip.org/link/?APL/60/3033/1",
+ doi = "10.1063/1.106774",
+}
+
+@Article{powell93,
+ author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
+ Ek and S. S. Iyer",
+ collaboration = "",
+ title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
+ alloy layers",
+ publisher = "AVS",
+ year = "1993",
+ journal = "J. Vac. Sci. Technol. B",
+ volume = "11",
+ number = "3",
+ pages = "1064--1068",
+ location = "Ottawa (Canada)",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
+ METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
+ BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
+ TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
+ URL = "http://link.aip.org/link/?JVB/11/1064/1",
+ doi = "10.1116/1.587008",
+ notes = "substitutional c in si by mbe",
+}
+
+@Article{powell93_2,
+ title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
+ of the ternary system",
+ journal = "J. Cryst. Growth",
+ volume = "127",
+ number = "1-4",
+ pages = "425--429",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90653-E",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
+ author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
+ Iyer",
+}
+
+@Article{osten94,
+ author = "H. J. Osten",
+ title = "Modification of Growth Modes in Lattice-Mismatched
+ Epitaxial Systems: Si/Ge",
+ journal = "phys. status solidi (a)",
+ volume = "145",
+ number = "2",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/pssa.2211450203",
+ doi = "10.1002/pssa.2211450203",
+ pages = "235--245",
+ year = "1994",
+}
+
+@Article{dietrich94,
+ title = "Lattice distortion in a strain-compensated
+ $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
+ author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
+ Methfessel and P. Zaumseil",
+ journal = "Phys. Rev. B",
+ volume = "49",
+ number = "24",
+ pages = "17185--17190",
+ numpages = "5",
+ year = "1994",
+ month = jun,
+ doi = "10.1103/PhysRevB.49.17185",
+ publisher = "American Physical Society",
+}
+
+@Article{osten94_2,
+ author = "H. J. Osten and E. Bugiel and P. Zaumseil",
+ collaboration = "",
+ title = "Growth of an inverse tetragonal distorted SiGe layer
+ on Si(001) by adding small amounts of carbon",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "64",
+ number = "25",
+ pages = "3440--3442",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
+ ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
+ XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
+ LATTICES",
+ URL = "http://link.aip.org/link/?APL/64/3440/1",
+ doi = "10.1063/1.111235",
+ notes = "inversely strained / distorted heterostructure",
+}
+
+@Article{iyer92,
+ author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
+ LeGoues and J. C. Tsang and F. Cardone",
+ collaboration = "",
+ title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "3",
+ pages = "356--358",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
+ EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
+ FILM GROWTH; MICROSTRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/356/1",
+ doi = "10.1063/1.106655",
+}
+
@Article{osten99,
author = "H. J. Osten and J. Griesche and S. Scalese",
collaboration = "",
compounds",
URL = "http://link.aip.org/link/?APL/74/836/1",
doi = "10.1063/1.123384",
- notes = "substitutional c in si",
+ notes = "substitutional c in si by mbe",
+}
+
+@Article{born27,
+ author = "M. Born and R. Oppenheimer",
+ title = "Zur Quantentheorie der Molekeln",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "389",
+ number = "20",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19273892002",
+ doi = "10.1002/andp.19273892002",
+ pages = "457--484",
+ year = "1927",
}
@Article{hohenberg64,
notes = "density functional theory, dft",
}
+@Article{thomas27,
+ title = "The calculation of atomic fields",
+ author = "L. H. Thomas",
+ journal = "Proc. Cambridge Philos. Soc.",
+ volume = "23",
+ pages = "542--548",
+ year = "1927",
+ doi = "10.1017/S0305004100011683",
+}
+
+@Article{fermi27,
+ title = "",
+ author = "E. Fermi",
+ journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
+ Rend.",
+ volume = "6",
+ pages = "602",
+ year = "1927",
+}
+
+@Article{hartree28,
+ title = "The Wave Mechanics of an Atom with a Non-Coulomb
+ Central Field. Part {I}. Theory and Methods",
+ author = "D. R. Hartree",
+ journal = "Proc. Cambridge Philos. Soc.",
+ volume = "24",
+ pages = "89--110",
+ year = "1928",
+ doi = "10.1017/S0305004100011919",
+}
+
+@Article{slater29,
+ title = "The Theory of Complex Spectra",
+ author = "J. C. Slater",
+ journal = "Phys. Rev.",
+ volume = "34",
+ number = "10",
+ pages = "1293--1322",
+ numpages = "29",
+ year = "1929",
+ month = nov,
+ doi = "10.1103/PhysRev.34.1293",
+ publisher = "American Physical Society",
+}
+
@Article{kohn65,
title = "Self-Consistent Equations Including Exchange and
Correlation Effects",
notes = "dft, exchange and correlation",
}
+@Article{kohn96,
+ title = "Density Functional and Density Matrix Method Scaling
+ Linearly with the Number of Atoms",
+ author = "W. Kohn",
+ journal = "Phys. Rev. Lett.",
+ volume = "76",
+ number = "17",
+ pages = "3168--3171",
+ numpages = "3",
+ year = "1996",
+ month = apr,
+ doi = "10.1103/PhysRevLett.76.3168",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn98,
+ title = "Edge Electron Gas",
+ author = "Walter Kohn and Ann E. Mattsson",
+ journal = "Phys. Rev. Lett.",
+ volume = "81",
+ number = "16",
+ pages = "3487--3490",
+ numpages = "3",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevLett.81.3487",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn99,
+ title = "Nobel Lecture: Electronic structure of matter---wave
+ functions and density functionals",
+ author = "W. Kohn",
+ journal = "Rev. Mod. Phys.",
+ volume = "71",
+ number = "5",
+ pages = "1253--1266",
+ numpages = "13",
+ year = "1999",
+ month = oct,
+ doi = "10.1103/RevModPhys.71.1253",
+ publisher = "American Physical Society",
+}
+
+@Article{payne92,
+ title = "Iterative minimization techniques for ab initio
+ total-energy calculations: molecular dynamics and
+ conjugate gradients",
+ author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
+ Arias and J. D. Joannopoulos",
+ journal = "Rev. Mod. Phys.",
+ volume = "64",
+ number = "4",
+ pages = "1045--1097",
+ numpages = "52",
+ year = "1992",
+ month = oct,
+ doi = "10.1103/RevModPhys.64.1045",
+ publisher = "American Physical Society",
+}
+
+@Article{levy82,
+ title = "Electron densities in search of Hamiltonians",
+ author = "Mel Levy",
+ journal = "Phys. Rev. A",
+ volume = "26",
+ number = "3",
+ pages = "1200--1208",
+ numpages = "8",
+ year = "1982",
+ month = sep,
+ doi = "10.1103/PhysRevA.26.1200",
+ publisher = "American Physical Society",
+}
+
@Article{ruecker94,
title = "Strain-stabilized highly concentrated pseudomorphic
$Si1-x$$Cx$ layers in Si",
si, dft",
}
+@Article{yagi02,
+ title = "Phosphorous Doping of Strain-Induced
+ Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
+ by Low-Temperature Chemical Vapor Deposition",
+ author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
+ Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "41",
+ number = "Part 1, No. 4B",
+ pages = "2472--2475",
+ numpages = "3",
+ year = "2002",
+ URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
+ doi = "10.1143/JJAP.41.2472",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "experimental charge carrier mobility in strained si",
+}
+
@Article{chang05,
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
doi = "10.1143/JJAP.44.2257",
publisher = "The Japan Society of Applied Physics",
- notes = "enhance of electron mobility in starined si",
+ notes = "enhance of electron mobility in strained si",
+}
+
+@Article{kissinger94,
+ author = "W. Kissinger and M. Weidner and H. J. Osten and M.
+ Eichler",
+ collaboration = "",
+ title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
+ y] layers on Si(001)",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "65",
+ number = "26",
+ pages = "3356--3358",
+ keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
+ CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
+ SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
+ ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
+ URL = "http://link.aip.org/link/?APL/65/3356/1",
+ doi = "10.1063/1.112390",
+ notes = "strained si influence on optical properties",
+}
+
+@Article{osten96,
+ author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
+ Zaumseil",
+ collaboration = "",
+ title = "Substitutional versus interstitial carbon
+ incorporation during pseudomorphic growth of Si[sub 1 -
+ y]{C}[sub y] on Si(001)",
+ publisher = "AIP",
+ year = "1996",
+ journal = "J. Appl. Phys.",
+ volume = "80",
+ number = "12",
+ pages = "6711--6715",
+ keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
+ MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
+ XRD; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/80/6711/1",
+ doi = "10.1063/1.363797",
+ notes = "mbe substitutional vs interstitial c incorporation",
}
@Article{osten97,
@Article{chaussende07,
author = "D. Chaussende and P. J. Wellmann and M. Pons",
title = "Status of Si{C} bulk growth processes",
- journal = "Journal of Physics D: Applied Physics",
+ journal = "J. Phys. D",
volume = "40",
number = "20",
pages = "6150",
Heteroepitaxial Growth",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "405--420",
URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
@Article{hornstra58,
title = "Dislocations in the diamond lattice",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "5",
number = "1-2",
pages = "129--141",
notes = "paw method",
}
+@InCollection{cohen70,
+ title = "The Fitting of Pseudopotentials to Experimental Data
+ and Their Subsequent Application",
+ editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
+ booktitle = "",
+ publisher = "Academic Press",
+ year = "1970",
+ volume = "24",
+ pages = "37--248",
+ series = "Solid State Physics",
+ ISSN = "0081-1947",
+ doi = "DOI: 10.1016/S0081-1947(08)60070-3",
+ URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
+ author = "Marvin L. Cohen and Volker Heine",
+}
+
@Article{hamann79,
title = "Norm-Conserving Pseudopotentials",
author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
notes = "norm-conserving pseudopotentials",
}
+@Article{troullier91,
+ title = "Efficient pseudopotentials for plane-wave
+ calculations",
+ author = "N. Troullier and Jos\'e Luriaas Martins",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "3",
+ pages = "1993--2006",
+ numpages = "13",
+ year = "1991",
+ month = jan,
+ doi = "10.1103/PhysRevB.43.1993",
+ publisher = "American Physical Society",
+}
+
@Article{vanderbilt90,
title = "Soft self-consistent pseudopotentials in a generalized
eigenvalue formalism",
notes = "vasp pseudopotentials",
}
+@Article{ceperley80,
+ title = "Ground State of the Electron Gas by a Stochastic
+ Method",
+ author = "D. M. Ceperley and B. J. Alder",
+ journal = "Phys. Rev. Lett.",
+ volume = "45",
+ number = "7",
+ pages = "566--569",
+ numpages = "3",
+ year = "1980",
+ month = aug,
+ doi = "10.1103/PhysRevLett.45.566",
+ publisher = "American Physical Society",
+}
+
+@Article{perdew81,
+ title = "Self-interaction correction to density-functional
+ approximations for many-electron systems",
+ author = "J. P. Perdew and Alex Zunger",
+ journal = "Phys. Rev. B",
+ volume = "23",
+ number = "10",
+ pages = "5048--5079",
+ numpages = "31",
+ year = "1981",
+ month = may,
+ doi = "10.1103/PhysRevB.23.5048",
+ publisher = "American Physical Society",
+}
+
@Article{perdew86,
title = "Accurate and simple density functional for the
electronic exchange energy: Generalized gradient
@Article{perdew02,
title = "Generalized gradient approximations for exchange and
correlation: {A} look backward and forward",
- journal = "Physica B: Condensed Matter",
+ journal = "Physica B",
volume = "172",
number = "1-2",
pages = "1--6",
notes = "gga pw91 (as in vasp)",
}
+@Article{chadi73,
+ title = "Special Points in the Brillouin Zone",
+ author = "D. J. Chadi and Marvin L. Cohen",
+ journal = "Phys. Rev. B",
+ volume = "8",
+ number = "12",
+ pages = "5747--5753",
+ numpages = "6",
+ year = "1973",
+ month = dec,
+ doi = "10.1103/PhysRevB.8.5747",
+ publisher = "American Physical Society",
+}
+
@Article{baldereschi73,
title = "Mean-Value Point in the Brillouin Zone",
author = "A. Baldereschi",
notes = "mean value k point",
}
+@Article{monkhorst76,
+ title = "Special points for Brillouin-zone integrations",
+ author = "Hendrik J. Monkhorst and James D. Pack",
+ journal = "Phys. Rev. B",
+ volume = "13",
+ number = "12",
+ pages = "5188--5192",
+ numpages = "4",
+ year = "1976",
+ month = jun,
+ doi = "10.1103/PhysRevB.13.5188",
+ publisher = "American Physical Society",
+}
+
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
@Article{losev28,
title = "Luminous carborundum detector and detection effect and
oscillations with crystals",
- journal = "Philosophical Magazine Series 7",
+ journal = "Philos. Mag. Series 7",
volume = "6",
number = "39",
pages = "1024--1044",
title = "Growth and Properties of beta-Si{C} Single Crystals",
publisher = "AIP",
year = "1966",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "37",
number = "1",
pages = "333--336",
title = "Electronic Conduction in Silicon Carbide",
publisher = "AIP",
year = "1953",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "21",
number = "5",
pages = "821--827",
improved external quantum efficiency",
publisher = "AIP",
year = "1982",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "53",
number = "10",
pages = "6962--6967",
single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "72",
number = "13",
pages = "1632--1634",
title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
number = "4",
pages = "221--223",
@Article{shibahara86,
title = "Surface morphology of cubic Si{C}(100) grown on
Si(100) by chemical vapor deposition",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "78",
number = "3",
pages = "538--544",
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "79",
number = "3",
pages = "1423--1434",
carbonization of silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "3",
pages = "2070--2073",
@Article{fuyuki89,
title = "Atomic layer epitaxy of cubic Si{C} by gas source
{MBE} using surface superstructure",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "95",
number = "1-4",
pages = "461--463",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "7",
pages = "824--826",
@Article{yoshinobu90,
title = "Atomic level control in gas source {MBE} growth of
cubic Si{C}",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "99",
number = "1-4",
pages = "520--524",
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "22",
pages = "2851--2853",
3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "359--378",
notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
@Article{takaoka98,
title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "183",
number = "1-2",
pages = "175--182",
title = "Low-temperature heteroepitaxial growth of cubic Si{C}
on Si using hydrocarbon radicals by gas source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "150",
number = "Part 2",
pages = "934--938",
author = "Volker Heine and Ching Cheng and Richard J. Needs",
title = "The Preference of Silicon Carbide for Growth in the
Metastable Cubic Form",
- journal = "Journal of the American Ceramic Society",
+ journal = "J. Am. Ceram. Soc.",
volume = "74",
number = "10",
publisher = "Blackwell Publishing Ltd",
@Article{allendorf91,
title = "The adsorption of {H}-atoms on polycrystalline
[beta]-silicon carbide",
- journal = "Surface Science",
+ journal = "Surf. Sci.",
volume = "258",
number = "1-3",
pages = "177--189",
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "11",
pages = "6615--6618",
@Article{newman85,
author = "Ronald C. Newman",
title = "Carbon in Crystalline Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "403",
eprint = "http://journals.cambridge.org/article_S194642740054367X",
}
+@Article{newman61,
+ title = "The diffusivity of carbon in silicon",
+ journal = "J. Phys. Chem. Solids",
+ volume = "19",
+ number = "3-4",
+ pages = "230--234",
+ year = "1961",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(61)90032-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+ author = "R. C. Newman and J. Wakefield",
+ notes = "diffusivity of substitutional c in si",
+}
+
@Article{goesele85,
author = "U. Gösele",
title = "The Role of Carbon and Point Defects in Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "419",
eprint = "http://journals.cambridge.org/article_S1946427400543681",
}
+@Article{mukashev82,
+ title = "Defects in Carbon-Implanted Silicon",
+ author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
+ Fukuoka and Haruo Saito",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "21",
+ number = "Part 1, No. 2",
+ pages = "399--400",
+ numpages = "1",
+ year = "1982",
+ URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
+ doi = "10.1143/JJAP.21.399",
+ publisher = "The Japan Society of Applied Physics",
+}
+
@Article{puska98,
title = "Convergence of supercell calculations for point
defects in semiconductors: Vacancy in silicon",
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "77",
number = "7",
pages = "2978--2984",
URL = "http://link.aip.org/link/?JAP/77/2978/1",
doi = "10.1063/1.358714",
}
+
+@Article{romano-rodriguez96,
+ title = "Detailed analysis of [beta]-Si{C} formation by high
+ dose carbon ion implantation in silicon",
+ journal = "Materials Science and Engineering B",
+ volume = "36",
+ number = "1-3",
+ pages = "282--285",
+ year = "1996",
+ note = "European Materials Research Society 1995 Spring
+ Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
+ Oxygen in Silicon and in Other Elemental
+ Semiconductors",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/0921-5107(95)01283-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
+ author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
+ and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
+ and W. Skorupa",
+ keywords = "Silicon",
+ keywords = "Ion implantation",
+ notes = "incoherent 3c-sic precipitate",
+}
+
+@Article{davidson75,
+ title = "The iterative calculation of a few of the lowest
+ eigenvalues and corresponding eigenvectors of large
+ real-symmetric matrices",
+ journal = "J. Comput. Phys.",
+ volume = "17",
+ number = "1",
+ pages = "87--94",
+ year = "1975",
+ note = "",
+ ISSN = "0021-9991",
+ doi = "DOI: 10.1016/0021-9991(75)90065-0",
+ URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
+ author = "Ernest R. Davidson",
+}
+
+@Book{adorno_mm,
+ title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
+ Leben",
+ author = "T. W. Adorno",
+ ISBN = "978-3-518-01236-9",
+ URL = "http://books.google.com/books?id=coZqRAAACAAJ",
+ year = "1994",
+ publisher = "Suhrkamp",
+}
projects / lectures / latex.git / blobdiff