% bibliography database
%
+@Article{schroedinger26,
+ author = "E. Schrödinger",
+ title = "Quantisierung als Eigenwertproblem",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "384",
+ number = "4",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19263840404",
+ doi = "10.1002/andp.19263840404",
+ pages = "361--376",
+ year = "1926",
+}
+
+@Article{bloch29,
+ author = "Felix Bloch",
+ affiliation = "Institut d. Universität f. theor. Physik Leipzig",
+ title = "Über die Quantenmechanik der Elektronen in
+ Kristallgittern",
+ journal = "Z. Phys.",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0939-7922",
+ keyword = "Physics and Astronomy",
+ pages = "555--600",
+ volume = "52",
+ issue = "7",
+ URL = "http://dx.doi.org/10.1007/BF01339455",
+ note = "10.1007/BF01339455",
+ year = "1929",
+}
+
@Article{albe_sic_pot,
author = "Paul Erhart and Karsten Albe",
title = "Analytical potential for atomistic simulations of
doi = "10.1103/PhysRevB.71.035211",
}
+@Article{erhart04,
+ title = "The role of thermostats in modeling vapor phase
+ condensation of silicon nanoparticles",
+ journal = "Appl. Surf. Sci.",
+ volume = "226",
+ number = "1-3",
+ pages = "12--18",
+ year = "2004",
+ note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2003.11.003",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
+ author = "Paul Erhart and Karsten Albe",
+}
+
@Article{albe2002,
title = "Modeling the metal-semiconductor interaction:
Analytical bond-order potential for platinum-carbon",
notes = "derivation of albe bond order formalism",
}
+@Article{newman65,
+ title = "Vibrational absorption of carbon in silicon",
+ journal = "J. Phys. Chem. Solids",
+ volume = "26",
+ number = "2",
+ pages = "373--379",
+ year = "1965",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(65)90166-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
+ author = "R. C. Newman and J. B. Willis",
+ notes = "c impurity dissolved as substitutional c in si",
+}
+
+@Article{baker68,
+ author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
+ Buschert",
+ collaboration = "",
+ title = "Effect of Carbon on the Lattice Parameter of Silicon",
+ publisher = "AIP",
+ year = "1968",
+ journal = "J. Appl. Phys.",
+ volume = "39",
+ number = "9",
+ pages = "4365--4368",
+ URL = "http://link.aip.org/link/?JAP/39/4365/1",
+ doi = "10.1063/1.1656977",
+ notes = "lattice contraction due to subst c",
+}
+
@Article{bean71,
- author = "A. R. Bean and R. C. Newman",
- title = "",
+ title = "The solubility of carbon in pulled silicon crystals",
journal = "J. Phys. Chem. Solids",
volume = "32",
- pages = "1211",
+ number = "6",
+ pages = "1211--1219",
year = "1971",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/S0022-3697(71)80179-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
+ author = "A. R. Bean and R. C. Newman",
notes = "experimental solubility data of carbon in silicon",
}
@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon carbide electronic materials and devices",
+ journal = "MRS Bull.",
+ year = "1997",
+ volume = "22",
+ number = "3",
+ pages = "19--22",
+ publisher = "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
journal = "MRS Bull.",
author = "G. R. Fisher and P. Barnes",
title = "Towards a unified view of polytypism in silicon
carbide",
- journal = "Philosophical Magazine Part B",
+ journal = "Philos. Mag. B",
volume = "61",
pages = "217--236",
year = "1990",
notes = "sic polytypes",
}
+@Article{koegler03,
+ author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
+ A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
+ Serre and A. Perez-Rodriguez",
+ title = "Synthesis of nano-sized Si{C} precipitates in Si by
+ simultaneous dual-beam implantation of {C}+ and Si+
+ ions",
+ journal = "Appl. Phys. A",
+ volume = "76",
+ pages = "827--835",
+ month = mar,
+ year = "2003",
+ URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
+ notes = "dual implantation, sic prec enhanced by vacancies,
+ precipitation by interstitial and substitutional
+ carbon, both mechanisms explained + refs",
+}
+
+@Article{skorupa96,
+ title = "Carbon-mediated effects in silicon and in
+ silicon-related materials",
+ journal = "Mater. Chem. Phys.",
+ volume = "44",
+ number = "2",
+ pages = "101--143",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/0254-0584(95)01673-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
+ author = "W. Skorupa and R. A. Yankov",
+ notes = "review of silicon carbon compound",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
notes = "virial derivation for 3-body tersoff potential",
}
+@Article{nielsen83,
+ title = "First-Principles Calculation of Stress",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. Lett.",
+ volume = "50",
+ number = "9",
+ pages = "697--700",
+ numpages = "3",
+ year = "1983",
+ month = feb,
+ doi = "10.1103/PhysRevLett.50.697",
+ publisher = "American Physical Society",
+ notes = "generalization of virial theorem",
+}
+
+@Article{nielsen85,
+ title = "Quantum-mechanical theory of stress and force",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. B",
+ volume = "32",
+ number = "6",
+ pages = "3780--3791",
+ numpages = "11",
+ year = "1985",
+ month = sep,
+ doi = "10.1103/PhysRevB.32.3780",
+ publisher = "American Physical Society",
+ notes = "dft virial stress and forces",
+}
+
@Article{moissan04,
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
Diablo",
- journal = "Comptes rendus de l'Académie des Sciences",
+ journal = "C. R. Acad. Sci.",
volume = "139",
pages = "773--786",
year = "1904",
author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
Calvin H. Carter Jr. and D. Asbury",
title = "Si{C} Seeded Boule Growth",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "3--8",
year = "1998",
title = "Molecular dynamics with coupling to an external bath",
publisher = "AIP",
year = "1984",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "81",
number = "8",
pages = "3684--3690",
title = "Molecular dynamics determination of defect energetics
in beta -Si{C} using three representative empirical
potentials",
- journal = "Modelling and Simulation in Materials Science and
- Engineering",
+ journal = "Modell. Simul. Mater. Sci. Eng.",
volume = "3",
number = "5",
pages = "615--627",
year = "1995",
}
-@Article{tersoff89,
+@Article{brenner89,
title = "Relationship between the embedded-atom method and
Tersoff potentials",
author = "Donald W. Brenner",
dumbbell configuration",
}
-@Article{gao02,
+@Article{gao02a,
title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
Defect accumulation, topological features, and
disordering",
@Article{devanathan98,
title = "Computer simulation of a 10 ke{V} Si displacement
cascade in Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "141",
number = "1-4",
pages = "118--122",
@Article{devanathan98_2,
title = "Displacement threshold energies in [beta]-Si{C}",
- journal = "Journal of Nuclear Materials",
+ journal = "J. Nucl. Mater.",
volume = "253",
number = "1-3",
pages = "47--52",
tersoff",
}
-@Article{batra87,
+@Article{kitabatake00,
title = "Si{C}/Si heteroepitaxial growth",
author = "M. Kitabatake",
journal = "Thin Solid Films",
notes = "si self interstitial, diffusion, tbmd",
}
-@Article{tang97,
+@Article{johnson98,
+ author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
+ Rubia",
+ collaboration = "",
+ title = "A kinetic Monte--Carlo study of the effective
+ diffusivity of the silicon self-interstitial in the
+ presence of carbon and boron",
+ publisher = "AIP",
+ year = "1998",
+ journal = "J. Appl. Phys.",
+ volume = "84",
+ number = "4",
+ pages = "1963--1967",
+ keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
+ CARBON ADDITIONS; BORON ADDITIONS; elemental
+ semiconductors; self-diffusion",
+ URL = "http://link.aip.org/link/?JAP/84/1963/1",
+ doi = "10.1063/1.368328",
+ notes = "kinetic monte carlo of si self interstitial
+ diffsuion",
+}
+
+@Article{bar-yam84,
+ title = "Barrier to Migration of the Silicon
+ Self-Interstitial",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "13",
+ pages = "1129--1132",
+ numpages = "3",
+ year = "1984",
+ month = mar,
+ doi = "10.1103/PhysRevLett.52.1129",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial migration barrier",
+}
+
+@Article{bar-yam84_2,
+ title = "Electronic structure and total-energy migration
+ barriers of silicon self-interstitials",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "30",
+ number = "4",
+ pages = "1844--1852",
+ numpages = "8",
+ year = "1984",
+ month = aug,
+ doi = "10.1103/PhysRevB.30.1844",
+ publisher = "American Physical Society",
+}
+
+@Article{bloechl93,
+ title = "First-principles calculations of self-diffusion
+ constants in silicon",
+ author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+ and D. B. Laks and W. Andreoni and S. T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "70",
+ number = "16",
+ pages = "2435--2438",
+ numpages = "3",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevLett.70.2435",
+ publisher = "American Physical Society",
+ notes = "si self int diffusion by ab initio md, formation
+ entropy calculations",
+}
+
+@Article{munro99,
+ title = "Defect migration in crystalline silicon",
+ author = "Lindsey J. Munro and David J. Wales",
+ journal = "Phys. Rev. B",
+ volume = "59",
+ number = "6",
+ pages = "3969--3980",
+ numpages = "11",
+ year = "1999",
+ month = feb,
+ doi = "10.1103/PhysRevB.59.3969",
+ publisher = "American Physical Society",
+ notes = "eigenvector following method, vacancy and interstiial
+ defect migration mechanisms",
+}
+
+@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
author = "L. Colombo",
notes = "si self interstitial, tbmd, virial stress",
}
+@Article{al-mushadani03,
+ title = "Free-energy calculations of intrinsic point defects in
+ silicon",
+ author = "O. K. Al-Mushadani and R. J. Needs",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "23",
+ pages = "235205",
+ numpages = "8",
+ year = "2003",
+ month = dec,
+ doi = "10.1103/PhysRevB.68.235205",
+ publisher = "American Physical Society",
+ notes = "formation energies of intrinisc point defects in
+ silicon, si self interstitials, free energy",
+}
+
+@Article{mattsson08,
+ title = "Electronic surface error in the Si interstitial
+ formation energy",
+ author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
+ Armiento",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "15",
+ pages = "155211",
+ numpages = "7",
+ year = "2008",
+ month = apr,
+ doi = "10.1103/PhysRevB.77.155211",
+ publisher = "American Physical Society",
+ notes = "si self interstitial formation energies by dft",
+}
+
+@Article{goedecker02,
+ title = "A Fourfold Coordinated Point Defect in Silicon",
+ author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+ journal = "Phys. Rev. Lett.",
+ volume = "88",
+ number = "23",
+ pages = "235501",
+ numpages = "4",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevLett.88.235501",
+ publisher = "American Physical Society",
+ notes = "first time ffcd, fourfold coordinated point defect in
+ silicon",
+}
+
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
+@Article{hobler05,
+ title = "Ab initio calculations of the interaction between
+ native point defects in silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "124-125",
+ number = "",
+ pages = "368--371",
+ year = "2005",
+ note = "EMRS 2005, Symposium D - Materials Science and Device
+ Issues for Future Technologies",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2005.08.072",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+ author = "G. Hobler and G. Kresse",
+ notes = "vasp intrinsic si defect interaction study, capture
+ radius",
+}
+
+@Article{ma10,
+ title = "Ab initio study of self-diffusion in silicon over a
+ wide temperature range: Point defect states and
+ migration mechanisms",
+ author = "Shangyi Ma and Shaoqing Wang",
+ journal = "Phys. Rev. B",
+ volume = "81",
+ number = "19",
+ pages = "193203",
+ numpages = "4",
+ year = "2010",
+ month = may,
+ doi = "10.1103/PhysRevB.81.193203",
+ publisher = "American Physical Society",
+ notes = "si self interstitial diffusion + refs",
+}
+
+@Article{posselt06,
+ title = "Atomistic simulations on the thermal stability of the
+ antisite pair in 3{C}- and 4{H}-Si{C}",
+ author = "M. Posselt and F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "73",
+ number = "12",
+ pages = "125206",
+ numpages = "8",
+ year = "2006",
+ month = mar,
+ doi = "10.1103/PhysRevB.73.125206",
+ publisher = "American Physical Society",
+}
+
+@Article{posselt08,
+ title = "Correlation between self-diffusion in Si and the
+ migration mechanisms of vacancies and
+ self-interstitials: An atomistic study",
+ author = "M. Posselt and F. Gao and H. Bracht",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "3",
+ pages = "035208",
+ numpages = "9",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.035208",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial and vacancy diffusion, stillinger
+ weber and tersoff",
+}
+
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
notes = "defects in 3c-sic",
}
+@Article{gao02,
+ title = "Empirical potential approach for defect properties in
+ 3{C}-Si{C}",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "191",
+ number = "1-4",
+ pages = "487--496",
+ year = "2002",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(02)00600-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
+ author = "Fei Gao and William J. Weber",
+ keywords = "Empirical potential",
+ keywords = "Defect properties",
+ keywords = "Silicon carbide",
+ keywords = "Computer simulation",
+ notes = "sic potential, brenner type, like erhart/albe",
+}
+
+@Article{gao04,
+ title = "Atomistic study of intrinsic defect migration in
+ 3{C}-Si{C}",
+ author = "Fei Gao and William J. Weber and M. Posselt and V.
+ Belko",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "24",
+ pages = "245205",
+ numpages = "5",
+ year = "2004",
+ month = jun,
+ doi = "10.1103/PhysRevB.69.245205",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{gao07,
+ author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
+ W. J. Weber",
+ collaboration = "",
+ title = "Ab Initio atomic simulations of antisite pair recovery
+ in cubic silicon carbide",
+ publisher = "AIP",
+ year = "2007",
+ journal = "Appl. Phys. Lett.",
+ volume = "90",
+ number = "22",
+ eid = "221915",
+ numpages = "3",
+ pages = "221915",
+ keywords = "ab initio calculations; silicon compounds; antisite
+ defects; wide band gap semiconductors; molecular
+ dynamics method; density functional theory;
+ electron-hole recombination; photoluminescence;
+ impurities; diffusion",
+ URL = "http://link.aip.org/link/?APL/90/221915/1",
+ doi = "10.1063/1.2743751",
+}
+
@Article{mattoni2002,
title = "Self-interstitial trapping by carbon complexes in
crystalline silicon",
doi = "10.1103/PhysRevB.66.195214",
publisher = "American Physical Society",
notes = "c in c-si, diffusion, interstitial configuration +
- links, interaction of carbon and silicon
- interstitials",
+ links, interaction of carbon and silicon interstitials,
+ tersoff suitability",
}
@Article{leung99,
@Article{capaz94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
dumbbell",
}
+@Article{capaz98,
+ title = "Theory of carbon-carbon pairs in silicon",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "15",
+ pages = "9845--9850",
+ numpages = "5",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevB.58.9845",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+ author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+ Shifeng Lu and Xiang-Yang Liu",
+ collaboration = "",
+ title = "Ab initio modeling and experimental study of {C}--{B}
+ interactions in Si",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Appl. Phys. Lett.",
+ volume = "80",
+ number = "1",
+ pages = "52--54",
+ keywords = "silicon; boron; carbon; elemental semiconductors;
+ impurity-defect interactions; ab initio calculations;
+ secondary ion mass spectra; diffusion; interstitials",
+ URL = "http://link.aip.org/link/?APL/80/52/1",
+ doi = "10.1063/1.1430505",
+ notes = "c-c 100 split, lower as a and b states of capaz",
+}
+
@Article{dal_pino93,
title = "Ab initio investigation of carbon-related defects in
silicon",
- author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
Joannopoulos",
journal = "Phys. Rev. B",
volume = "47",
path formation",
}
+@Article{car85,
+ title = "Unified Approach for Molecular Dynamics and
+ Density-Functional Theory",
+ author = "R. Car and M. Parrinello",
+ journal = "Phys. Rev. Lett.",
+ volume = "55",
+ number = "22",
+ pages = "2471--2474",
+ numpages = "3",
+ year = "1985",
+ month = nov,
+ doi = "10.1103/PhysRevLett.55.2471",
+ publisher = "American Physical Society",
+ notes = "car parrinello method, dft and md",
+}
+
@Article{kelires97,
title = "Short-range order, bulk moduli, and physical trends in
c-$Si1-x$$Cx$ alloys",
@Article{bean70,
title = "Low temperature electron irradiation of silicon
containing carbon",
- journal = "Solid State Communications",
+ journal = "Solid State Commun.",
volume = "8",
number = "3",
pages = "175--177",
author = "A. R. Bean and R. C. Newman",
}
+@Article{durand99,
+ author = "F. Durand and J. Duby",
+ affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
+ title = "Carbon solubility in solid and liquid silicon—{A}
+ review with reference to eutectic equilibrium",
+ journal = "Journal of Phase Equilibria",
+ publisher = "Springer New York",
+ ISSN = "1054-9714",
+ keyword = "Chemistry and Materials Science",
+ pages = "61--63",
+ volume = "20",
+ issue = "1",
+ URL = "http://dx.doi.org/10.1361/105497199770335956",
+ note = "10.1361/105497199770335956",
+ year = "1999",
+ notes = "better c solubility limit in silicon",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
@Article{song90,
title = "{EPR} identification of the single-acceptor state of
interstitial carbon in silicon",
- author = "G. D. Watkins L. W. Song",
+ author = "L. W. Song and G. D. Watkins",
journal = "Phys. Rev. B",
volume = "42",
number = "9",
author = "A K Tipping and R C Newman",
title = "The diffusion coefficient of interstitial carbon in
silicon",
- journal = "Semiconductor Science and Technology",
+ journal = "Semicond. Sci. Technol.",
volume = "2",
number = "5",
pages = "315--317",
silicon",
}
+@Article{isomae93,
+ author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
+ Masao Tamura",
+ collaboration = "",
+ title = "Annealing behavior of Me{V} implanted carbon in
+ silicon",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "6",
+ pages = "3815--3820",
+ keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
+ RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
+ PROFILES",
+ URL = "http://link.aip.org/link/?JAP/74/3815/1",
+ doi = "10.1063/1.354474",
+ notes = "c at interstitial location for rt implantation in si",
+}
+
@Article{strane96,
title = "Carbon incorporation into Si at high concentrations by
ion implantation and solid phase epitaxy",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "P. Laveant and G. Gerth and P. Werner and U.
- G{\"o}sele",
- journal = "Materials Science and Engineering B",
+ journal = "Mater. Sci. Eng., B",
volume = "89",
number = "1-3",
pages = "241--245",
- keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ year = "2002",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/S0921-5107(01)00794-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
+ author = "P. Lav\'eant and G. Gerth and P. Werner and U.
+ G{\"{o}}sele",
notes = "low c in si, tensile stress to compensate compressive
stress, avoid sic precipitation",
}
+@Article{foell77,
+ title = "The formation of swirl defects in silicon by
+ agglomeration of self-interstitials",
+ journal = "J. Cryst. Growth",
+ volume = "40",
+ number = "1",
+ pages = "90--108",
+ year = "1977",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(77)90034-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "b-swirl: si + c interstitial agglomerates, c-si
+ agglomerate",
+}
+
+@Article{foell81,
+ title = "Microdefects in silicon and their relation to point
+ defects",
+ journal = "J. Cryst. Growth",
+ volume = "52",
+ number = "Part 2",
+ pages = "907--916",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90397-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "swirl review",
+}
+
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
silicon by transmission electron microscopy",
publisher = "AIP",
year = "1997",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "70",
number = "2",
pages = "252--254",
precipitate",
}
-@Article{strane94,
- author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+@InProceedings{werner96,
+ author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
+ Eichler",
+ booktitle = "Proceedings of the 11th International Conference on
+ Ion Implantation Technology.",
+ title = "{TEM} investigation of {C}-Si defects in carbon
+ implanted silicon",
+ year = "1996",
+ month = jun,
+ volume = "",
+ number = "",
+ pages = "675--678",
+ doi = "10.1109/IIT.1996.586497",
+ ISSN = "",
+ notes = "c-si agglomerates dumbbells",
+}
+
+@Article{werner98,
+ author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+ D. C. Jacobson",
+ collaboration = "",
+ title = "Carbon diffusion in silicon",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Appl. Phys. Lett.",
+ volume = "73",
+ number = "17",
+ pages = "2465--2467",
+ keywords = "silicon; carbon; elemental semiconductors; diffusion;
+ secondary ion mass spectra; semiconductor epitaxial
+ layers; annealing; impurity-defect interactions;
+ impurity distribution",
+ URL = "http://link.aip.org/link/?APL/73/2465/1",
+ doi = "10.1063/1.122483",
+ notes = "c diffusion in si, kick out mechnism",
+}
+
+@Article{kalejs84,
+ author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Self-interstitial enhanced carbon diffusion in
+ silicon",
+ publisher = "AIP",
+ year = "1984",
+ journal = "Appl. Phys. Lett.",
+ volume = "45",
+ number = "3",
+ pages = "268--269",
+ keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
+ CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
+ TEMPERATURE; IMPURITIES",
+ URL = "http://link.aip.org/link/?APL/45/268/1",
+ doi = "10.1063/1.95167",
+ notes = "c diffusion due to si self-interstitials",
+}
+
+@Article{fukami90,
+ author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
+ and Cary Y. Yang",
+ collaboration = "",
+ title = "Characterization of SiGe/Si heterostructures formed by
+ Ge[sup + ] and {C}[sup + ] implantation",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Appl. Phys. Lett.",
+ volume = "57",
+ number = "22",
+ pages = "2345--2347",
+ keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
+ FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
+ SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
+ EPITAXY; CARBON IONS; GERMANIUM IONS",
+ URL = "http://link.aip.org/link/?APL/57/2345/1",
+ doi = "10.1063/1.103888",
+}
+
+@Article{strane93,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
+ Doyle and S. T. Picraux and J. W. Mayer",
+ collaboration = "",
+ title = "Metastable SiGe{C} formation by solid phase epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Appl. Phys. Lett.",
+ volume = "63",
+ number = "20",
+ pages = "2786--2788",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
+ SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
+ ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
+ SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
+ EPITAXY; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?APL/63/2786/1",
+ doi = "10.1063/1.110334",
+}
+
+@Article{goorsky92,
+ author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
+ Legoues and J. Angilello and F. Cardone",
+ collaboration = "",
+ title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
+ strained layer superlattices",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "22",
+ pages = "2758--2760",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
+ CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
+ RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
+ DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
+ URL = "http://link.aip.org/link/?APL/60/2758/1",
+ doi = "10.1063/1.106868",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
collaboration = "",
title = "Precipitation and relaxation in strained Si[sub 1 -
y]{C}[sub y]/Si heterostructures",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "6",
pages = "3656--3668",
keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
URL = "http://link.aip.org/link/?JAP/76/3656/1",
doi = "10.1063/1.357429",
- notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs,
+ precipitation by substitutional carbon, coherent prec,
+ coherent to incoherent transition strain vs interface
+ energy",
+}
+
+@Article{fischer95,
+ author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
+ Osten",
+ collaboration = "",
+ title = "Investigation of the high temperature behavior of
+ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "77",
+ number = "5",
+ pages = "1934--1937",
+ keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
+ XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
+ PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
+ TEMPERATURE RANGE 04001000 K",
+ URL = "http://link.aip.org/link/?JAP/77/1934/1",
+ doi = "10.1063/1.358826",
}
@Article{edgar92,
doi = "doi:10.1016/j.nimb.2006.12.118",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Periodically arranged, selforganised, nanometric,
+ amorphous precipitates have been observed after
+ high-fluence ion implantations into solids for a number
+ of ion/target combinations at certain implantation
+ conditions. A model describing the ordering process
+ based on compressive stress exerted by the amorphous
+ inclusions as a result of the density change upon
+ amorphisation is introduced. A Monte Carlo simulation
+ code, which focuses on high-fluence carbon
+ implantations into silicon, is able to reproduce
+ experimentally observed nanolamella distributions as
+ well as the formation of continuous amorphous layers.
+ By means of simulation, the selforganisation process
+ becomes traceable and detailed information about the
+ compositional and structural state during the ordering
+ process is obtained. Based on simulation results, a
+ recipe is proposed for producing broad distributions of
+ ordered lamellar structures.",
}
@Article{zirkelbach2006,
doi = "doi:10.1016/j.nimb.2005.08.162",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "High-dose ion implantation of materials that undergo
+ drastic density change upon amorphization at certain
+ implantation conditions results in periodically
+ arranged, self-organized, nanometric configurations of
+ the amorphous phase. A simple model explaining the
+ phenomenon is introduced and implemented in a
+ Monte-Carlo simulation code. Through simulation
+ conditions for observing lamellar precipitates are
+ specified and additional information about the
+ compositional and structural state during the ordering
+ process is gained.",
}
@Article{zirkelbach2005,
doi = "doi:10.1016/j.commatsci.2004.12.016",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Ion irradiation of materials, which undergo a drastic
+ density change upon amorphization have been shown to
+ exhibit selforganized, nanometric structures of the
+ amorphous phase in the crystalline host lattice. In
+ order to better understand the process a
+ Monte-Carlo-simulation code based on a simple model is
+ developed. In the present work we focus on high-dose
+ carbon implantations into silicon. The simulation is
+ able to reproduce results gained by cross-sectional TEM
+ measurements of high-dose carbon implanted silicon.
+ Necessary conditions can be specified for the
+ self-organization process and information is gained
+ about the compositional and structural state during the
+ ordering process which is difficult to be obtained by
+ experiment.",
+}
+
+@Article{zirkelbach09,
+ title = "Molecular dynamics simulation of defect formation and
+ precipitation in heavily carbon doped silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "159-160",
+ number = "",
+ pages = "149--152",
+ year = "2009",
+ note = "EMRS 2008 Spring Conference Symposium K: Advanced
+ Silicon Materials Research for Electronic and
+ Photovoltaic Applications",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2008.10.010",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+ author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+ B. Stritzker",
+ keywords = "Silicon",
+ keywords = "Carbon",
+ keywords = "Silicon carbide",
+ keywords = "Nucleation",
+ keywords = "Defect formation",
+ keywords = "Molecular dynamics simulations",
+ abstract = "The precipitation process of silicon carbide in
+ heavily carbon doped silicon is not yet fully
+ understood. High resolution transmission electron
+ microscopy observations suggest that in a first step
+ carbon atoms form C-Si dumbbells on regular Si lattice
+ sites which agglomerate into large clusters. In a
+ second step, when the cluster size reaches a radius of
+ a few nm, the high interfacial energy due to the SiC/Si
+ lattice misfit of almost 20\% is overcome and the
+ precipitation occurs. By simulation, details of the
+ precipitation process can be obtained on the atomic
+ level. A recently proposed parametrization of a
+ Tersoff-like bond order potential is used to model the
+ system appropriately. Preliminary results gained by
+ molecular dynamics simulations using this potential are
+ presented.",
+}
+
+@Article{zirkelbach10,
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
+ pages = "094110",
+ numpages = "6",
+ year = "2010",
+ month = sep,
+ doi = "10.1103/PhysRevB.82.094110",
+ publisher = "American Physical Society",
+ abstract = "A comparative theoretical investigation of carbon
+ interstitials in silicon is presented. Calculations
+ using classical potentials are compared to
+ first-principles density-functional theory calculations
+ of the geometries, formation, and activation energies
+ of the carbon dumbbell interstitial, showing the
+ importance of a quantum-mechanical description of this
+ system. In contrast to previous studies, the present
+ first-principles calculations of the interstitial
+ carbon migration path yield an activation energy that
+ excellently matches the experiment. The bond-centered
+ interstitial configuration shows a net magnetization of
+ two electrons, illustrating the need for spin-polarized
+ calculations.",
+}
+
+@Article{zirkelbach11,
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
+ abstract = "Atomistic simulations on the silicon carbide
+ precipitation in bulk silicon employing both, classical
+ potential and first-principles methods are presented.
+ The calculations aim at a comprehensive, microscopic
+ understanding of the precipitation mechanism in the
+ context of controversial discussions in the literature.
+ For the quantum-mechanical treatment, basic processes
+ assumed in the precipitation process are calculated in
+ feasible systems of small size. The migration mechanism
+ of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
+ 1 0> self-interstitial in otherwise defect-free silicon
+ are investigated using density functional theory
+ calculations. The influence of a nearby vacancy,
+ another carbon interstitial and a substitutional defect
+ as well as a silicon self-interstitial has been
+ investigated systematically. Interactions of various
+ combinations of defects have been characterized
+ including a couple of selected migration pathways
+ within these configurations. Almost all of the
+ investigated pairs of defects tend to agglomerate
+ allowing for a reduction in strain. The formation of
+ structures involving strong carbon-carbon bonds turns
+ out to be very unlikely. In contrast, substitutional
+ carbon occurs in all probability. A long range capture
+ radius has been observed for pairs of interstitial
+ carbon as well as interstitial carbon and vacancies. A
+ rather small capture radius is predicted for
+ substitutional carbon and silicon self-interstitials.
+ Initial assumptions regarding the precipitation
+ mechanism of silicon carbide in bulk silicon are
+ established and conformability to experimental findings
+ is discussed. Furthermore, results of the accurate
+ first-principles calculations on defects and carbon
+ diffusion in silicon are compared to results of
+ classical potential simulations revealing significant
+ limitations of the latter method. An approach to work
+ around this problem is proposed. Finally, results of
+ the classical potential molecular dynamics simulations
+ of large systems are examined, which reinforce previous
+ assumptions and give further insight into basic
+ processes involved in the silicon carbide transition.",
+}
+
+@Article{lindner95,
+ author = "J. K. N. Lindner and A. Frohnwieser and B.
+ Rauschenbach and B. Stritzker",
+ title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
+ Layers in Silicon",
+ journal = "MRS Proc.",
+ volume = "354",
+ number = "",
+ pages = "171",
+ year = "1994",
+ doi = "10.1557/PROC-354-171",
+ URL = "http://dx.doi.org/10.1557/PROC-354-171",
+ notes = "first time ibs at moderate temperatures",
+}
+
+@Article{lindner96,
+ title = "Formation of buried epitaxial silicon carbide layers
+ in silicon by ion beam synthesis",
+ journal = "Mater. Chem. Phys.",
+ volume = "46",
+ number = "2-3",
+ pages = "147--155",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/S0254-0584(97)80008-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
+ author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
+ Götz and A. Frohnwieser and B. Rauschenbach and B.
+ Stritzker",
+ notes = "dose window",
+}
+
+@Article{calcagno96,
+ title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
+ ion implantation",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "120",
+ number = "1-4",
+ pages = "121--124",
+ year = "1996",
+ note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
+ New Trends in Ion Beam Processing of Materials",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(96)00492-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
+ author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
+ Grimaldi and P. Musumeci",
+ notes = "dose window, graphitic bonds",
+}
+
+@Article{lindner98,
+ title = "Mechanisms of Si{C} Formation in the Ion Beam
+ Synthesis of 3{C}-Si{C} Layers in Silicon",
+ journal = "Mater. Sci. Forum",
+ volume = "264-268",
+ pages = "215--218",
+ year = "1998",
+ note = "",
+ doi = "10.4028/www.scientific.net/MSF.264-268.215",
+ URL = "http://www.scientific.net/MSF.264-268.215",
+ author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
+ notes = "intermediate temperature for sharp interface + good
+ crystallinity",
}
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
layers in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "147",
number = "1-4",
pages = "249--255",
@Article{lindner99_2,
title = "Mechanisms in the ion beam synthesis of Si{C} layers
in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "148",
number = "1-4",
pages = "528--533",
year = "1999",
- note = "",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(98)00787-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
author = "J. K. N. Lindner and B. Stritzker",
+ notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
}
@Article{lindner01,
title = "Ion beam synthesis of buried Si{C} layers in silicon:
Basic physical processes",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "178",
number = "1-4",
pages = "44--54",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(01)00504-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
- author = "Jörg K. N. Lindner",
+ author = "J{\"{o}}rg K. N. Lindner",
}
@Article{lindner02,
notes = "ibs, burried sic layers",
}
+@Article{lindner06,
+ title = "On the balance between ion beam induced nanoparticle
+ formation and displacive precipitate resolution in the
+ {C}-Si system",
+ journal = "Mater. Sci. Eng., C",
+ volume = "26",
+ number = "5-7",
+ pages = "857--861",
+ year = "2006",
+ note = "Current Trends in Nanoscience - from Materials to
+ Applications",
+ ISSN = "0928-4931",
+ doi = "DOI: 10.1016/j.msec.2005.09.099",
+ URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
+ notes = "c int diffusion barrier",
+}
+
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
+@Article{ito04,
+ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+ application in buffer layer for Ga{N} epitaxial
+ growth",
+ journal = "Appl. Surf. Sci.",
+ volume = "238",
+ number = "1-4",
+ pages = "159--164",
+ year = "2004",
+ note = "APHYS'03 Special Issue",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2004.05.199",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+ author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+ and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic, focus on ibs of 3c-sic",
+}
+
+@Article{yamamoto04,
+ title = "Organometallic vapor phase epitaxial growth of Ga{N}
+ on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
+ implantation into Si(1 1 1) substrate",
+ journal = "J. Cryst. Growth",
+ volume = "261",
+ number = "2-3",
+ pages = "266--270",
+ year = "2004",
+ note = "Proceedings of the 11th Biennial (US) Workshop on
+ Organometallic Vapor Phase Epitaxy (OMVPE)",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
+ author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
+ Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
+ notes = "gan on 3c-sic",
+}
+
+@Article{liu_l02,
+ title = "Substrates for gallium nitride epitaxy",
+ journal = "Mater. Sci. Eng., R",
+ volume = "37",
+ number = "3",
+ pages = "61--127",
+ year = "2002",
+ note = "",
+ ISSN = "0927-796X",
+ doi = "DOI: 10.1016/S0927-796X(02)00008-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
+ author = "L. Liu and J. H. Edgar",
+ notes = "gan substrates",
+}
+
+@Article{takeuchi91,
+ title = "Growth of single crystalline Ga{N} film on Si
+ substrate using 3{C}-Si{C} as an intermediate layer",
+ journal = "J. Cryst. Growth",
+ volume = "115",
+ number = "1-4",
+ pages = "634--638",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90817-O",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
+ author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
+ Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
+ notes = "gan on 3c-sic (first time?)",
+}
+
@Article{alder57,
author = "B. J. Alder and T. E. Wainwright",
title = "Phase Transition for a Hard Sphere System",
publisher = "AIP",
year = "1957",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "27",
number = "5",
pages = "1208--1209",
title = "Studies in Molecular Dynamics. {I}. General Method",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "31",
number = "2",
pages = "459--466",
doi = "10.1063/1.1730376",
}
+@Article{horsfield96,
+ title = "Bond-order potentials: Theory and implementation",
+ author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
+ D. G. Pettifor and M. Aoki",
+ journal = "Phys. Rev. B",
+ volume = "53",
+ number = "19",
+ pages = "12694--12712",
+ numpages = "18",
+ year = "1996",
+ month = may,
+ doi = "10.1103/PhysRevB.53.12694",
+ publisher = "American Physical Society",
+}
+
+@Article{abell85,
+ title = "Empirical chemical pseudopotential theory of molecular
+ and metallic bonding",
+ author = "G. C. Abell",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "10",
+ pages = "6184--6196",
+ numpages = "12",
+ year = "1985",
+ month = may,
+ doi = "10.1103/PhysRevB.31.6184",
+ publisher = "American Physical Society",
+}
+
@Article{tersoff_si1,
title = "New empirical model for the structural properties of
silicon",
publisher = "American Physical Society",
}
+@Article{dodson87,
+ title = "Development of a many-body Tersoff-type potential for
+ silicon",
+ author = "Brian W. Dodson",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "6",
+ pages = "2795--2798",
+ numpages = "3",
+ year = "1987",
+ month = feb,
+ doi = "10.1103/PhysRevB.35.2795",
+ publisher = "American Physical Society",
+}
+
@Article{tersoff_si2,
title = "New empirical approach for the structure and energy of
covalent systems",
@Article{wesch96,
title = "Silicon carbide: synthesis and processing",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "116",
number = "1-4",
pages = "305--321",
author = "W. Wesch",
}
+@Article{davis91,
+ author = "R. F. Davis and G. Kelner and M. Shur and J. W.
+ Palmour and J. A. Edmond",
+ journal = "Proc. IEEE",
+ title = "Thin film deposition and microelectronic and
+ optoelectronic device fabrication and characterization
+ in monocrystalline alpha and beta silicon carbide",
+ year = "1991",
+ month = may,
+ volume = "79",
+ number = "5",
+ pages = "677--701",
+ keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
+ diode;SiC;dry etching;electrical
+ contacts;etching;impurity incorporation;optoelectronic
+ device fabrication;solid-state devices;surface
+ chemistry;Schottky effect;Schottky gate field effect
+ transistors;Schottky-barrier
+ diodes;etching;heterojunction bipolar
+ transistors;insulated gate field effect
+ transistors;light emitting diodes;semiconductor
+ materials;semiconductor thin films;silicon compounds;",
+ doi = "10.1109/5.90132",
+ ISSN = "0018-9219",
+ notes = "sic growth methods",
+}
+
@Article{morkoc94,
author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
Lin and B. Sverdlov and M. Burns",
ZnSe-based semiconductor device technologies",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "3",
pages = "1363--1398",
FILMS; INDUSTRY",
URL = "http://link.aip.org/link/?JAP/76/1363/1",
doi = "10.1063/1.358463",
+ notes = "sic intro, properties",
}
@Article{foo,
pages = "15150--15159",
numpages = "9",
year = "1995",
- month = dec,
doi = "10.1103/PhysRevB.52.15150",
- notes = "modified tersoff, scale cutoff with volume",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
publisher = "American Physical Society",
}
@Article{sarro00,
title = "Silicon carbide as a new {MEMS} technology",
- journal = "Sensors and Actuators A: Physical",
+ journal = "Seonsor. Actuator. A",
volume = "82",
number = "1-3",
pages = "210--218",
title = "Status of silicon carbide (Si{C}) as a wide-bandgap
semiconductor for high-temperature applications: {A}
review",
- journal = "Solid-State Electronics",
+ journal = "Solid-State Electron.",
volume = "39",
number = "10",
pages = "1409--1422",
doi = "DOI: 10.1016/0038-1101(96)00045-7",
URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
author = "J. B. Casady and R. W. Johnson",
+ notes = "sic intro",
}
@Article{giancarli98,
title = "Design requirements for Si{C}/Si{C} composites
structural material in fusion power reactor blankets",
- journal = "Fusion Engineering and Design",
+ journal = "Fusion Eng. Des.",
volume = "41",
number = "1-4",
pages = "165--171",
@Article{pensl93,
title = "Electrical and optical characterization of Si{C}",
- journal = "Physica B: Condensed Matter",
+ journal = "Physica B",
volume = "185",
number = "1-4",
pages = "264--283",
@Article{tairov78,
title = "Investigation of growth processes of ingots of silicon
carbide single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "43",
number = "2",
pages = "209--212",
year = "1978",
- notes = "modifief lely process",
+ notes = "modified lely process",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(78)90169-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
author = "Yu. M. Tairov and V. F. Tsvetkov",
}
+@Article{tairov81,
+ title = "General principles of growing large-size single
+ crystals of various silicon carbide polytypes",
+ journal = "J. Cryst. Growth",
+ volume = "52",
+ number = "Part 1",
+ pages = "146--150",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90184-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
+ author = "Yu.M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{barrett91,
+ title = "Si{C} boule growth by sublimation vapor transport",
+ journal = "J. Cryst. Growth",
+ volume = "109",
+ number = "1-4",
+ pages = "17--23",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90152-U",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+ author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+ R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+ title = "Growth of large Si{C} single crystals",
+ journal = "J. Cryst. Growth",
+ volume = "128",
+ number = "1-4",
+ pages = "358--362",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90348-Z",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+ author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+ R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+ W. J. Choyke",
+}
+
+@Article{stein93,
+ title = "Control of polytype formation by surface energy
+ effects during the growth of Si{C} monocrystals by the
+ sublimation method",
+ journal = "J. Cryst. Growth",
+ volume = "131",
+ number = "1-2",
+ pages = "71--74",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90397-F",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+ author = "R. A. Stein and P. Lanig",
+ notes = "6h and 4h, sublimation technique",
+}
+
+@Article{nishino83,
+ author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+ Will",
+ collaboration = "",
+ title = "Production of large-area single-crystal wafers of
+ cubic Si{C} for semiconductor devices",
+ publisher = "AIP",
+ year = "1983",
+ journal = "Appl. Phys. Lett.",
+ volume = "42",
+ number = "5",
+ pages = "460--462",
+ keywords = "silicon carbides; layers; chemical vapor deposition;
+ monocrystals",
+ URL = "http://link.aip.org/link/?APL/42/460/1",
+ doi = "10.1063/1.93970",
+ notes = "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
+@Article{nishino87,
+ author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+ and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Epitaxial growth and electric characteristics of cubic
+ Si{C} on silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "J. Appl. Phys.",
+ volume = "61",
+ number = "10",
+ pages = "4889--4893",
+ URL = "http://link.aip.org/link/?JAP/61/4889/1",
+ doi = "10.1063/1.338355",
+ notes = "cvd of 3c-sic on si, sic buffer layer, first time
+ carbonization",
+}
+
@Article{powell87,
author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
Kuczmarski",
Single-Crystal Films on Si",
publisher = "ECS",
year = "1987",
- journal = "Journal of The Electrochemical Society",
+ journal = "J. Electrochem. Soc.",
volume = "134",
number = "6",
pages = "1558--1565",
notes = "blue light emitting diodes (led)",
}
+@Article{powell87_2,
+ author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
+ C. M. Chorey and T. T. Cheng and P. Pirouz",
+ collaboration = "",
+ title = "Improved beta-Si{C} heteroepitaxial films using
+ off-axis Si substrates",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "51",
+ number = "11",
+ pages = "823--825",
+ keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
+ COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
+ STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
+ FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
+ OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
+ URL = "http://link.aip.org/link/?APL/51/823/1",
+ doi = "10.1063/1.98824",
+ notes = "improved sic on off-axis si substrates, reduced apbs",
+}
+
+@Article{ueda90,
+ title = "Crystal growth of Si{C} by step-controlled epitaxy",
+ journal = "J. Cryst. Growth",
+ volume = "104",
+ number = "3",
+ pages = "695--700",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90013-B",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+ author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+ Matsunami",
+ notes = "step-controlled epitaxy model",
+}
+
@Article{kimoto93,
author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
and Hiroyuki Matsunami",
epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "73",
number = "2",
pages = "726--732",
VAPOR DEPOSITION",
URL = "http://link.aip.org/link/?JAP/73/726/1",
doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
+}
+
+@Article{powell90_2,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of high quality 6{H}-Si{C} epitaxial films on
+ vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Appl. Phys. Lett.",
+ volume = "56",
+ number = "15",
+ pages = "1442--1444",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+ TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+ DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1442/1",
+ doi = "10.1063/1.102492",
+ notes = "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+ author = "H. S. Kong and J. T. Glass and R. F. Davis",
+ collaboration = "",
+ title = "Chemical vapor deposition and characterization of
+ 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "J. Appl. Phys.",
+ volume = "64",
+ number = "5",
+ pages = "2672--2679",
+ keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+ COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+ MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+ STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+ PHASE EPITAXY; CRYSTAL ORIENTATION",
+ URL = "http://link.aip.org/link/?JAP/64/2672/1",
+ doi = "10.1063/1.341608",
}
@Article{powell90,
6{H}-Si{C} substrates",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "14",
pages = "1353--1355",
PHASE EPITAXY",
URL = "http://link.aip.org/link/?APL/56/1353/1",
doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{kong88,
+ author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+ Rozgonyi and K. L. More",
+ collaboration = "",
+ title = "An examination of double positioning boundaries and
+ interface misfit in beta-Si{C} films on alpha-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "J. Appl. Phys.",
+ volume = "63",
+ number = "8",
+ pages = "2645--2650",
+ keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+ FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+ FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+ MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+ STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+ URL = "http://link.aip.org/link/?JAP/63/2645/1",
+ doi = "10.1063/1.341004",
+}
+
+@Article{powell91,
+ author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+ Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+ and W. J. Choyke and L. Clemen and M. Yoganathan",
+ collaboration = "",
+ title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Appl. Phys. Lett.",
+ volume = "59",
+ number = "3",
+ pages = "333--335",
+ keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+ PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+ MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+ URL = "http://link.aip.org/link/?APL/59/333/1",
+ doi = "10.1063/1.105587",
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
+}
+
+@Article{kaneda87,
+ title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+ properties of its p-n junction",
+ journal = "J. Cryst. Growth",
+ volume = "81",
+ number = "1-4",
+ pages = "536--542",
+ year = "1987",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(87)90449-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+ author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+ and Takao Tanaka",
+ notes = "first time ssmbe of 3c-sic on 6h-sic",
}
@Article{fissel95,
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "154",
number = "1-2",
pages = "72--80",
year = "1995",
- notes = "solid source mbe",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(95)00170-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
- author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
- and W. Richter",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B.
+ Schr{\"{o}}ter and W. Richter",
+ notes = "solid source mbe of 3c-sic on si and 6h-sic",
}
-@Article{borders71,
- author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+@Article{fissel95_apl,
+ author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+ collaboration = "",
+ title = "Low-temperature growth of Si{C} thin films on Si and
+ 6{H}--Si{C} by solid-source molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Appl. Phys. Lett.",
+ volume = "66",
+ number = "23",
+ pages = "3182--3184",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ RHEED; NUCLEATION",
+ URL = "http://link.aip.org/link/?APL/66/3182/1",
+ doi = "10.1063/1.113716",
+ notes = "mbe 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel96,
+ author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
+ Bernd Schr{\"{o}}ter and Wolfgang Richter",
+ collaboration = "",
+ title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
+ migration enhanced epitaxy controlled to an atomic
+ level using surface superstructures",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Appl. Phys. Lett.",
+ volume = "68",
+ number = "9",
+ pages = "1204--1206",
+ keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
+ SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/68/1204/1",
+ doi = "10.1063/1.115969",
+ notes = "ss mbe sic, superstructure, reconstruction",
+}
+
+@Article{righi03,
+ title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
+ author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
+ C. M. Bertoni and A. Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "91",
+ number = "13",
+ pages = "136101",
+ numpages = "4",
+ year = "2003",
+ month = sep,
+ doi = "10.1103/PhysRevLett.91.136101",
+ publisher = "American Physical Society",
+ notes = "dft calculations mbe sic growth",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
collaboration = "",
title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
{IMPLANTATION}",
publisher = "AIP",
year = "1971",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "18",
number = "11",
pages = "509--511",
URL = "http://link.aip.org/link/?APL/18/509/1",
- notes = "first time sic by ibs",
doi = "10.1063/1.1653516",
+ notes = "first time sic by ibs, follow cites for precipitation
+ ideas",
+}
+
+@Article{edelman76,
+ author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+ and E. V. Lubopytova",
+ title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+ by ion implantation",
+ publisher = "Taylor \& Francis",
+ year = "1976",
+ journal = "Radiat. Eff.",
+ volume = "29",
+ number = "1",
+ pages = "13--15",
+ URL = "http://www.informaworld.com/10.1080/00337577608233477",
+ notes = "3c-sic for different temperatures, amorphous, poly,
+ single crystalline",
+}
+
+@Article{akimchenko80,
+ author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
+ Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+ title = "Structure and optical properties of silicon implanted
+ by high doses of 70 and 310 ke{V} carbon ions",
+ publisher = "Taylor \& Francis",
+ year = "1980",
+ journal = "Radiat. Eff.",
+ volume = "48",
+ number = "1",
+ pages = "7",
+ URL = "http://www.informaworld.com/10.1080/00337578008209220",
+ notes = "3c-sic nucleation by thermal spikes",
+}
+
+@Article{kimura81,
+ title = "Structure and annealing properties of silicon carbide
+ thin layers formed by implantation of carbon ions in
+ silicon",
+ journal = "Thin Solid Films",
+ volume = "81",
+ number = "4",
+ pages = "319--327",
+ year = "1981",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(81)90516-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{kimura82,
+ title = "Characteristics of the synthesis of [beta]-Si{C} by
+ the implantation of carbon ions into silicon",
+ journal = "Thin Solid Films",
+ volume = "94",
+ number = "3",
+ pages = "191--198",
+ year = "1982",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(82)90295-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{reeson86,
+ author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
+ C. D. Meekison and C. Marsh and G. R. Booker and R. J.
+ Chater and J. A. Iulner and J. Davis",
+ title = "Formation mechanisms and structures of insulating
+ compounds formed in silicon by ion beam synthesis",
+ publisher = "Taylor \& Francis",
+ year = "1986",
+ journal = "Radiat. Eff.",
+ volume = "99",
+ number = "1",
+ pages = "71--81",
+ URL = "http://www.informaworld.com/10.1080/00337578608209614",
+ notes = "ibs, comparison with sio and sin, higher temp or time,
+ no c redistribution",
}
@Article{reeson87,
beam synthesis and incoherent lamp annealing",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "26",
pages = "2242--2244",
notes = "nice tem images, sic by ibs",
}
+@Article{martin90,
+ author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+ and M. Olivier and A. M. Papon and G. Rolland",
+ collaboration = "",
+ title = "High-temperature ion beam synthesis of cubic Si{C}",
+ publisher = "AIP",
+ year = "1990",
+ journal = "J. Appl. Phys.",
+ volume = "67",
+ number = "6",
+ pages = "2908--2912",
+ keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+ IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+ TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+ INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+ ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+ REACTIONS; MONOCRYSTALS",
+ URL = "http://link.aip.org/link/?JAP/67/2908/1",
+ doi = "10.1063/1.346092",
+ notes = "triple energy implantation to overcome high annealing
+ temepratures",
+}
+
@Article{scace59,
author = "R. I. Scace and G. A. Slack",
collaboration = "",
title = "Solubility of Carbon in Silicon and Germanium",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "30",
number = "6",
pages = "1551--1555",
URL = "http://link.aip.org/link/?JCP/30/1551/1",
doi = "10.1063/1.1730236",
- notes = "solubility of c in c-si",
+ notes = "solubility of c in c-si, si-c phase diagram",
+}
+
+@Article{hofker74,
+ author = "W. Hofker and H. Werner and D. Oosthoek and N.
+ Koeman",
+ affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
+ Laboratories Eindhoven Netherlands Eindhoven
+ Netherlands",
+ title = "Boron implantations in silicon: {A} comparison of
+ charge carrier and boron concentration profiles",
+ journal = "Appl. Phys. A",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0947-8396",
+ keyword = "Physics and Astronomy",
+ pages = "125--133",
+ volume = "4",
+ issue = "2",
+ URL = "http://dx.doi.org/10.1007/BF00884267",
+ note = "10.1007/BF00884267",
+ year = "1974",
+ notes = "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+ author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+ H. Kastl",
+ collaboration = "",
+ title = "Rapid annealing and the anomalous diffusion of ion
+ implanted boron into silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "50",
+ number = "7",
+ pages = "416--418",
+ keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+ BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+ HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+ URL = "http://link.aip.org/link/?APL/50/416/1",
+ doi = "10.1063/1.98160",
+ notes = "ted of boron in si",
+}
+
+@Article{cowern90,
+ author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+ Jos",
+ collaboration = "",
+ title = "Transient diffusion of ion-implanted {B} in Si: Dose,
+ time, and matrix dependence of atomic and electrical
+ profiles",
+ publisher = "AIP",
+ year = "1990",
+ journal = "J. Appl. Phys.",
+ volume = "68",
+ number = "12",
+ pages = "6191--6198",
+ keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+ DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+ CRYSTALS; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?JAP/68/6191/1",
+ doi = "10.1063/1.346910",
+ notes = "ted of boron in si",
}
@Article{cowern96,
{B} in silicon",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "8",
pages = "1150--1152",
@Article{stolk95,
title = "Implantation and transient boron diffusion: the role
of the silicon self-interstitial",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "96",
number = "1-2",
pages = "187--195",
diffusion in ion-implanted silicon",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "81",
number = "9",
pages = "6031--6050",
of Si[sub 1 - y]{C}[sub y] random alloy layers",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "64",
number = "3",
pages = "324--326",
- x - y]Ge[sub x]{C}[sub y]",
publisher = "AIP",
year = "1991",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "70",
number = "4",
pages = "2470--2472",
author = "E Kasper",
title = "Superlattices of group {IV} elements, a new
possibility to produce direct band gap material",
- journal = "Physica Scripta",
+ journal = "Phys. Scr.",
volume = "T35",
pages = "232--236",
URL = "http://stacks.iop.org/1402-4896/T35/232",
quasi-direct one",
}
+@Article{eberl92,
+ author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
+ and F. K. LeGoues",
+ collaboration = "",
+ title = "Growth and strain compensation effects in the ternary
+ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "24",
+ pages = "3033--3035",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
+ TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
+ EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
+ STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
+ STUDIES",
+ URL = "http://link.aip.org/link/?APL/60/3033/1",
+ doi = "10.1063/1.106774",
+}
+
+@Article{powell93,
+ author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
+ Ek and S. S. Iyer",
+ collaboration = "",
+ title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
+ alloy layers",
+ publisher = "AVS",
+ year = "1993",
+ journal = "J. Vac. Sci. Technol. B",
+ volume = "11",
+ number = "3",
+ pages = "1064--1068",
+ location = "Ottawa (Canada)",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
+ METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
+ BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
+ TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
+ URL = "http://link.aip.org/link/?JVB/11/1064/1",
+ doi = "10.1116/1.587008",
+ notes = "substitutional c in si by mbe",
+}
+
+@Article{powell93_2,
+ title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
+ of the ternary system",
+ journal = "J. Cryst. Growth",
+ volume = "127",
+ number = "1-4",
+ pages = "425--429",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90653-E",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
+ author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
+ Iyer",
+}
+
+@Article{osten94,
+ author = "H. J. Osten",
+ title = "Modification of Growth Modes in Lattice-Mismatched
+ Epitaxial Systems: Si/Ge",
+ journal = "phys. status solidi (a)",
+ volume = "145",
+ number = "2",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/pssa.2211450203",
+ doi = "10.1002/pssa.2211450203",
+ pages = "235--245",
+ year = "1994",
+}
+
+@Article{dietrich94,
+ title = "Lattice distortion in a strain-compensated
+ $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
+ author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
+ Methfessel and P. Zaumseil",
+ journal = "Phys. Rev. B",
+ volume = "49",
+ number = "24",
+ pages = "17185--17190",
+ numpages = "5",
+ year = "1994",
+ month = jun,
+ doi = "10.1103/PhysRevB.49.17185",
+ publisher = "American Physical Society",
+}
+
+@Article{osten94_2,
+ author = "H. J. Osten and E. Bugiel and P. Zaumseil",
+ collaboration = "",
+ title = "Growth of an inverse tetragonal distorted SiGe layer
+ on Si(001) by adding small amounts of carbon",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "64",
+ number = "25",
+ pages = "3440--3442",
+ keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
+ ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
+ XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
+ LATTICES",
+ URL = "http://link.aip.org/link/?APL/64/3440/1",
+ doi = "10.1063/1.111235",
+ notes = "inversely strained / distorted heterostructure",
+}
+
+@Article{iyer92,
+ author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
+ LeGoues and J. C. Tsang and F. Cardone",
+ collaboration = "",
+ title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "3",
+ pages = "356--358",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
+ EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
+ FILM GROWTH; MICROSTRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/356/1",
+ doi = "10.1063/1.106655",
+}
+
@Article{osten99,
author = "H. J. Osten and J. Griesche and S. Scalese",
collaboration = "",
molecular beam epitaxy",
publisher = "AIP",
year = "1999",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "74",
number = "6",
pages = "836--838",
compounds",
URL = "http://link.aip.org/link/?APL/74/836/1",
doi = "10.1063/1.123384",
- notes = "substitutional c in si",
+ notes = "substitutional c in si by mbe",
+}
+
+@Article{born27,
+ author = "M. Born and R. Oppenheimer",
+ title = "Zur Quantentheorie der Molekeln",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "389",
+ number = "20",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19273892002",
+ doi = "10.1002/andp.19273892002",
+ pages = "457--484",
+ year = "1927",
}
@Article{hohenberg64,
notes = "density functional theory, dft",
}
+@Article{thomas27,
+ title = "The calculation of atomic fields",
+ author = "L. H. Thomas",
+ journal = "Proc. Cambridge Philos. Soc.",
+ volume = "23",
+ pages = "542--548",
+ year = "1927",
+ doi = "10.1017/S0305004100011683",
+}
+
+@Article{fermi27,
+ title = "",
+ author = "E. Fermi",
+ journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
+ Rend.",
+ volume = "6",
+ pages = "602",
+ year = "1927",
+}
+
+@Article{hartree28,
+ title = "The Wave Mechanics of an Atom with a Non-Coulomb
+ Central Field. Part {I}. Theory and Methods",
+ author = "D. R. Hartree",
+ journal = "Proc. Cambridge Philos. Soc.",
+ volume = "24",
+ pages = "89--110",
+ year = "1928",
+ doi = "10.1017/S0305004100011919",
+}
+
+@Article{slater29,
+ title = "The Theory of Complex Spectra",
+ author = "J. C. Slater",
+ journal = "Phys. Rev.",
+ volume = "34",
+ number = "10",
+ pages = "1293--1322",
+ numpages = "29",
+ year = "1929",
+ month = nov,
+ doi = "10.1103/PhysRev.34.1293",
+ publisher = "American Physical Society",
+}
+
@Article{kohn65,
title = "Self-Consistent Equations Including Exchange and
Correlation Effects",
notes = "dft, exchange and correlation",
}
+@Article{kohn96,
+ title = "Density Functional and Density Matrix Method Scaling
+ Linearly with the Number of Atoms",
+ author = "W. Kohn",
+ journal = "Phys. Rev. Lett.",
+ volume = "76",
+ number = "17",
+ pages = "3168--3171",
+ numpages = "3",
+ year = "1996",
+ month = apr,
+ doi = "10.1103/PhysRevLett.76.3168",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn98,
+ title = "Edge Electron Gas",
+ author = "Walter Kohn and Ann E. Mattsson",
+ journal = "Phys. Rev. Lett.",
+ volume = "81",
+ number = "16",
+ pages = "3487--3490",
+ numpages = "3",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevLett.81.3487",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn99,
+ title = "Nobel Lecture: Electronic structure of matter---wave
+ functions and density functionals",
+ author = "W. Kohn",
+ journal = "Rev. Mod. Phys.",
+ volume = "71",
+ number = "5",
+ pages = "1253--1266",
+ numpages = "13",
+ year = "1999",
+ month = oct,
+ doi = "10.1103/RevModPhys.71.1253",
+ publisher = "American Physical Society",
+}
+
+@Article{payne92,
+ title = "Iterative minimization techniques for ab initio
+ total-energy calculations: molecular dynamics and
+ conjugate gradients",
+ author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
+ Arias and J. D. Joannopoulos",
+ journal = "Rev. Mod. Phys.",
+ volume = "64",
+ number = "4",
+ pages = "1045--1097",
+ numpages = "52",
+ year = "1992",
+ month = oct,
+ doi = "10.1103/RevModPhys.64.1045",
+ publisher = "American Physical Society",
+}
+
+@Article{levy82,
+ title = "Electron densities in search of Hamiltonians",
+ author = "Mel Levy",
+ journal = "Phys. Rev. A",
+ volume = "26",
+ number = "3",
+ pages = "1200--1208",
+ numpages = "8",
+ year = "1982",
+ month = sep,
+ doi = "10.1103/PhysRevA.26.1200",
+ publisher = "American Physical Society",
+}
+
@Article{ruecker94,
title = "Strain-stabilized highly concentrated pseudomorphic
$Si1-x$$Cx$ layers in Si",
month = may,
doi = "10.1103/PhysRevLett.72.3578",
publisher = "American Physical Society",
- notes = "high c concentration in si, heterostructure, starined
+ notes = "high c concentration in si, heterostructure, strained
si, dft",
}
+@Article{yagi02,
+ title = "Phosphorous Doping of Strain-Induced
+ Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
+ by Low-Temperature Chemical Vapor Deposition",
+ author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
+ Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "41",
+ number = "Part 1, No. 4B",
+ pages = "2472--2475",
+ numpages = "3",
+ year = "2002",
+ URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
+ doi = "10.1143/JJAP.41.2472",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "experimental charge carrier mobility in strained si",
+}
+
@Article{chang05,
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
author = "Shu-Tong Chang and Chung-Yi Lin",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "44",
number = "4B",
pages = "2257--2262",
URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
doi = "10.1143/JJAP.44.2257",
publisher = "The Japan Society of Applied Physics",
- notes = "enhance of electron mobility in starined si",
+ notes = "enhance of electron mobility in strained si",
+}
+
+@Article{kissinger94,
+ author = "W. Kissinger and M. Weidner and H. J. Osten and M.
+ Eichler",
+ collaboration = "",
+ title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
+ y] layers on Si(001)",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "65",
+ number = "26",
+ pages = "3356--3358",
+ keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
+ CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
+ SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
+ ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
+ URL = "http://link.aip.org/link/?APL/65/3356/1",
+ doi = "10.1063/1.112390",
+ notes = "strained si influence on optical properties",
+}
+
+@Article{osten96,
+ author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
+ Zaumseil",
+ collaboration = "",
+ title = "Substitutional versus interstitial carbon
+ incorporation during pseudomorphic growth of Si[sub 1 -
+ y]{C}[sub y] on Si(001)",
+ publisher = "AIP",
+ year = "1996",
+ journal = "J. Appl. Phys.",
+ volume = "80",
+ number = "12",
+ pages = "6711--6715",
+ keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
+ MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
+ XRD; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/80/6711/1",
+ doi = "10.1063/1.363797",
+ notes = "mbe substitutional vs interstitial c incorporation",
}
@Article{osten97,
Si(001)",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "82",
number = "10",
pages = "4977--4981",
notes = "charge transport in strained si",
}
-@Article{PhysRevB.69.155214,
+@Article{kapur04,
title = "Carbon-mediated aggregation of self-interstitials in
silicon: {A} large-scale molecular dynamics study",
author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
notes = "simulation using promising tersoff reparametrization",
}
-@Article{tang95,
- title = "Atomistic simulation of thermomechanical properties of
- \beta{}-Si{C}",
- author = "Meijie Tang and Sidney Yip",
- journal = "Phys. Rev. B",
- volume = "52",
- number = "21",
- pages = "15150--15159",
- numpages = "9",
- year = "1995",
- month = dec,
- doi = "10.1103/PhysRevB.52.15150",
- publisher = "American Physical Society",
- notes = "promising tersoff reparametrization",
-}
-
@Article{barkema96,
title = "Event-Based Relaxation of Continuous Disordered
Systems",
potential energy surfaces",
publisher = "AIP",
year = "2009",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "130",
number = "11",
eid = "114711",
molecular dynamics method",
publisher = "AIP",
year = "1981",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "52",
number = "12",
pages = "7182--7190",
publisher = "American Physical Society",
}
+@Article{brenner90,
+ title = "Empirical potential for hydrocarbons for use in
+ simulating the chemical vapor deposition of diamond
+ films",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "15",
+ pages = "9458--9471",
+ numpages = "13",
+ year = "1990",
+ month = nov,
+ doi = "10.1103/PhysRevB.42.9458",
+ publisher = "American Physical Society",
+ notes = "brenner hydro carbons",
+}
+
+@Article{bazant96,
+ title = "Modeling of Covalent Bonding in Solids by Inversion of
+ Cohesive Energy Curves",
+ author = "Martin Z. Bazant and Efthimios Kaxiras",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4370--4373",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4370",
+ publisher = "American Physical Society",
+ notes = "first si edip",
+}
+
@Article{bazant97,
title = "Environment-dependent interatomic potential for bulk
silicon",
month = oct,
doi = "10.1103/PhysRevB.56.8542",
publisher = "American Physical Society",
+ notes = "second si edip",
}
@Article{justo98,
title = "Interatomic potential for silicon defects and
disordered phases",
- author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
- Kaxiras and V. V. Bulatov and Sidney Yip",
+ author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
+ Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
journal = "Phys. Rev. B",
volume = "58",
number = "5",
month = aug,
doi = "10.1103/PhysRevB.58.2539",
publisher = "American Physical Society",
+ notes = "latest si edip, good dislocation explanation",
}
@Article{parcas_md,
- title = "{PARCAS} molecular dynamics code",
+ journal = "{PARCAS} molecular dynamics code",
author = "K. Nordlund",
year = "2008",
}
+
+@Article{voter97,
+ title = "Hyperdynamics: Accelerated Molecular Dynamics of
+ Infrequent Events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. Lett.",
+ volume = "78",
+ number = "20",
+ pages = "3908--3911",
+ numpages = "3",
+ year = "1997",
+ month = may,
+ doi = "10.1103/PhysRevLett.78.3908",
+ publisher = "American Physical Society",
+ notes = "hyperdynamics, accelerated md",
+}
+
+@Article{voter97_2,
+ author = "Arthur F. Voter",
+ collaboration = "",
+ title = "A method for accelerating the molecular dynamics
+ simulation of infrequent events",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Chem. Phys.",
+ volume = "106",
+ number = "11",
+ pages = "4665--4677",
+ keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
+ TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
+ SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
+ energy functions; surface diffusion; reaction kinetics
+ theory; potential energy surfaces",
+ URL = "http://link.aip.org/link/?JCP/106/4665/1",
+ doi = "10.1063/1.473503",
+ notes = "improved hyperdynamics md",
+}
+
+@Article{sorensen2000,
+ author = "Mads R. S{\o }rensen and Arthur F. Voter",
+ collaboration = "",
+ title = "Temperature-accelerated dynamics for simulation of
+ infrequent events",
+ publisher = "AIP",
+ year = "2000",
+ journal = "J. Chem. Phys.",
+ volume = "112",
+ number = "21",
+ pages = "9599--9606",
+ keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
+ MOLECULAR DYNAMICS METHOD; surface diffusion",
+ URL = "http://link.aip.org/link/?JCP/112/9599/1",
+ doi = "10.1063/1.481576",
+ notes = "temperature accelerated dynamics, tad",
+}
+
+@Article{voter98,
+ title = "Parallel replica method for dynamics of infrequent
+ events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "22",
+ pages = "R13985--R13988",
+ numpages = "3",
+ year = "1998",
+ month = jun,
+ doi = "10.1103/PhysRevB.57.R13985",
+ publisher = "American Physical Society",
+ notes = "parallel replica method, accelerated md",
+}
+
+@Article{wu99,
+ author = "Xiongwu Wu and Shaomeng Wang",
+ collaboration = "",
+ title = "Enhancing systematic motion in molecular dynamics
+ simulation",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Chem. Phys.",
+ volume = "110",
+ number = "19",
+ pages = "9401--9410",
+ keywords = "molecular dynamics method; argon; Lennard-Jones
+ potential; crystallisation; liquid theory",
+ URL = "http://link.aip.org/link/?JCP/110/9401/1",
+ doi = "10.1063/1.478948",
+ notes = "self guided md, sgmd, accelerated md, enhancing
+ systematic motion",
+}
+
+@Article{choudhary05,
+ author = "Devashish Choudhary and Paulette Clancy",
+ collaboration = "",
+ title = "Application of accelerated molecular dynamics schemes
+ to the production of amorphous silicon",
+ publisher = "AIP",
+ year = "2005",
+ journal = "J. Chem. Phys.",
+ volume = "122",
+ number = "15",
+ eid = "154509",
+ numpages = "8",
+ pages = "154509",
+ keywords = "molecular dynamics method; silicon; glass structure;
+ amorphous semiconductors",
+ URL = "http://link.aip.org/link/?JCP/122/154509/1",
+ doi = "10.1063/1.1878733",
+ notes = "explanation of sgmd and hyper md, applied to amorphous
+ silicon",
+}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Appl. Phys. Lett.",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si, si self
+ interstitials necessary for precipitation, volume
+ decrease, high interface energy",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "J. Cryst. Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}
+
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "J. Phys. D",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
+@Article{feynman39,
+ title = "Forces in Molecules",
+ author = "R. P. Feynman",
+ journal = "Phys. Rev.",
+ volume = "56",
+ number = "4",
+ pages = "340--343",
+ numpages = "3",
+ year = "1939",
+ month = aug,
+ doi = "10.1103/PhysRev.56.340",
+ publisher = "American Physical Society",
+ notes = "hellmann feynman forces",
+}
+
+@Article{buczko00,
+ title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+ $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+ their Contrasting Properties",
+ author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+ T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "84",
+ number = "5",
+ pages = "943--946",
+ numpages = "3",
+ year = "2000",
+ month = jan,
+ doi = "10.1103/PhysRevLett.84.943",
+ publisher = "American Physical Society",
+ notes = "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+ title = "Atomistic simulation of the interface structure of Si
+ nanocrystals embedded in amorphous silica",
+ author = "Flyura Djurabekova and Kai Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "11",
+ pages = "115325",
+ numpages = "7",
+ year = "2008",
+ month = mar,
+ doi = "10.1103/PhysRevB.77.115325",
+ publisher = "American Physical Society",
+ notes = "nc-si in sio2, interface energy, nc construction,
+ angular distribution, coordination",
+}
+
+@Article{wen09,
+ author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+ W. Liang and J. Zou",
+ collaboration = "",
+ title = "Nature of interfacial defects and their roles in
+ strain relaxation at highly lattice mismatched
+ 3{C}-Si{C}/Si (001) interface",
+ publisher = "AIP",
+ year = "2009",
+ journal = "J. Appl. Phys.",
+ volume = "106",
+ number = "7",
+ eid = "073522",
+ numpages = "8",
+ pages = "073522",
+ keywords = "anelastic relaxation; crystal structure; dislocations;
+ elemental semiconductors; semiconductor growth;
+ semiconductor thin films; silicon; silicon compounds;
+ stacking faults; wide band gap semiconductors",
+ URL = "http://link.aip.org/link/?JAP/106/073522/1",
+ doi = "10.1063/1.3234380",
+ notes = "sic/si interface, follow refs, tem image
+ deconvolution, dislocation defects",
+}
+
+@Article{kitabatake93,
+ author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
+ Hirao",
+ collaboration = "",
+ title = "Simulations and experiments of Si{C} heteroepitaxial
+ growth on Si(001) surface",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "7",
+ pages = "4438--4445",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+ BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+ MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+ URL = "http://link.aip.org/link/?JAP/74/4438/1",
+ doi = "10.1063/1.354385",
+ notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
+ model, interface",
+}
+
+@Article{kitabatake97,
+ author = "Makoto Kitabatake",
+ title = "Simulations and Experiments of 3{C}-Si{C}/Si
+ Heteroepitaxial Growth",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "phys. status solidi (b)",
+ volume = "202",
+ pages = "405--420",
+ URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ notes = "3c-sic heteroepitaxial growth on si off-axis model",
+}
+
+@Article{chirita97,
+ title = "Strain relaxation and thermal stability of the
+ 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
+ dynamics study",
+ journal = "Thin Solid Films",
+ volume = "294",
+ number = "1-2",
+ pages = "47--49",
+ year = "1997",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/S0040-6090(96)09257-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
+ author = "V. Chirita and L. Hultman and L. R. Wallenberg",
+ keywords = "Strain relaxation",
+ keywords = "Interfaces",
+ keywords = "Thermal stability",
+ keywords = "Molecular dynamics",
+ notes = "tersoff sic/si interface study",
+}
+
+@Article{cicero02,
+ title = "Ab initio Study of Misfit Dislocations at the
+ $Si{C}/Si(001)$ Interface",
+ author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
+ Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "89",
+ number = "15",
+ pages = "156101",
+ numpages = "4",
+ year = "2002",
+ month = sep,
+ doi = "10.1103/PhysRevLett.89.156101",
+ publisher = "American Physical Society",
+ notes = "sic/si interface study",
+}
+
+@Article{pizzagalli03,
+ title = "Theoretical investigations of a highly mismatched
+ interface: Si{C}/Si(001)",
+ author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+ Catellani",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "19",
+ pages = "195302",
+ numpages = "10",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.195302",
+ publisher = "American Physical Society",
+ notes = "tersoff md and ab initio sic/si interface study",
+}
+
+@Article{tang07,
+ title = "Atomic configurations of dislocation core and twin
+ boundaries in $ 3{C}-Si{C} $ studied by high-resolution
+ electron microscopy",
+ author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
+ H. Zheng and J. W. Liang",
+ journal = "Phys. Rev. B",
+ volume = "75",
+ number = "18",
+ pages = "184103",
+ numpages = "7",
+ year = "2007",
+ month = may,
+ doi = "10.1103/PhysRevB.75.184103",
+ publisher = "American Physical Society",
+ notes = "hrem image deconvolution on 3c-sic on si, distinguish
+ si and c",
+}
+
+@Article{hornstra58,
+ title = "Dislocations in the diamond lattice",
+ journal = "J. Phys. Chem. Solids",
+ volume = "5",
+ number = "1-2",
+ pages = "129--141",
+ year = "1958",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(58)90138-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
+ author = "J. Hornstra",
+ notes = "dislocations in diamond lattice",
+}
+
+@Article{deguchi92,
+ title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+ Ion `Hot' Implantation",
+ author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
+ Hirao and Naoki Arai and Tomio Izumi",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "31",
+ number = "Part 1, No. 2A",
+ pages = "343--347",
+ numpages = "4",
+ year = "1992",
+ URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
+ doi = "10.1143/JJAP.31.343",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "c-c bonds in c implanted si, hot implantation
+ efficiency, c-c hard to break by thermal annealing",
+}
+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Appl. Phys.",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional carbon,
+ expansion of si lattice",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "J. Appl. Phys.",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c into c sub trafo",
+}
+
+@Article{lucas10,
+ author = "G Lucas and M Bertolus and L Pizzagalli",
+ title = "An environment-dependent interatomic potential for
+ silicon carbide: calculation of bulk properties,
+ high-pressure phases, point and extended defects, and
+ amorphous structures",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "22",
+ number = "3",
+ pages = "035802",
+ URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+ year = "2010",
+ notes = "edip sic",
+}
+
+@Article{godet03,
+ author = "J Godet and L Pizzagalli and S Brochard and P
+ Beauchamp",
+ title = "Comparison between classical potentials and ab initio
+ methods for silicon under large shear",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "15",
+ number = "41",
+ pages = "6943",
+ URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
+ year = "2003",
+ notes = "comparison of empirical potentials, stillinger weber,
+ edip, tersoff, ab initio",
+}
+
+@Article{moriguchi98,
+ title = "Verification of Tersoff's Potential for Static
+ Structural Analysis of Solids of Group-{IV} Elements",
+ author = "Koji Moriguchi and Akira Shintani",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "37",
+ number = "Part 1, No. 2",
+ pages = "414--422",
+ numpages = "8",
+ year = "1998",
+ URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
+ doi = "10.1143/JJAP.37.414",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "tersoff stringent test",
+}
+
+@Article{mazzarolo01,
+ title = "Low-energy recoils in crystalline silicon: Quantum
+ simulations",
+ author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
+ Lulli and Eros Albertazzi",
+ journal = "Phys. Rev. B",
+ volume = "63",
+ number = "19",
+ pages = "195207",
+ numpages = "4",
+ year = "2001",
+ month = apr,
+ doi = "10.1103/PhysRevB.63.195207",
+ publisher = "American Physical Society",
+}
+
+@Article{holmstroem08,
+ title = "Threshold defect production in silicon determined by
+ density functional theory molecular dynamics
+ simulations",
+ author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "4",
+ pages = "045202",
+ numpages = "6",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.045202",
+ publisher = "American Physical Society",
+ notes = "threshold displacement comparison empirical and ab
+ initio",
+}
+
+@Article{nordlund97,
+ title = "Repulsive interatomic potentials calculated using
+ Hartree-Fock and density-functional theory methods",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "132",
+ number = "1",
+ pages = "45--54",
+ year = "1997",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(97)00447-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
+ author = "K. Nordlund and N. Runeberg and D. Sundholm",
+ notes = "repulsive ab initio potential",
+}
+
+@Article{kresse96,
+ title = "Efficiency of ab-initio total energy calculations for
+ metals and semiconductors using a plane-wave basis
+ set",
+ journal = "Comput. Mater. Sci.",
+ volume = "6",
+ number = "1",
+ pages = "15--50",
+ year = "1996",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00008-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
+ author = "G. Kresse and J. Furthm{\"{u}}ller",
+ notes = "vasp ref",
+}
+
+@Article{bloechl94,
+ title = "Projector augmented-wave method",
+ author = "P. E. Bl{\"o}chl",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "24",
+ pages = "17953--17979",
+ numpages = "26",
+ year = "1994",
+ month = dec,
+ doi = "10.1103/PhysRevB.50.17953",
+ publisher = "American Physical Society",
+ notes = "paw method",
+}
+
+@InCollection{cohen70,
+ title = "The Fitting of Pseudopotentials to Experimental Data
+ and Their Subsequent Application",
+ editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
+ publisher = "Academic Press",
+ year = "1970",
+ volume = "24",
+ pages = "37--248",
+ series = "Solid State Physics",
+ ISSN = "0081-1947",
+ doi = "DOI: 10.1016/S0081-1947(08)60070-3",
+ URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
+ author = "Marvin L. Cohen and Volker Heine",
+}
+
+@Article{hamann79,
+ title = "Norm-Conserving Pseudopotentials",
+ author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
+ journal = "Phys. Rev. Lett.",
+ volume = "43",
+ number = "20",
+ pages = "1494--1497",
+ numpages = "3",
+ year = "1979",
+ month = nov,
+ doi = "10.1103/PhysRevLett.43.1494",
+ publisher = "American Physical Society",
+ notes = "norm-conserving pseudopotentials",
+}
+
+@Article{kleinman82,
+ journal = "Phys. Rev. Lett.",
+ month = may,
+ doi = "10.1103/PhysRevLett.48.1425",
+ issue = "20",
+ author = "Leonard Kleinman and D. M. Bylander",
+ title = "Efficacious Form for Model Pseudopotentials",
+ year = "1982",
+ URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425",
+ publisher = "American Physical Society",
+ pages = "1425--1428",
+ volume = "48",
+}
+
+@Article{troullier91,
+ title = "Efficient pseudopotentials for plane-wave
+ calculations",
+ author = "N. Troullier and Jos\'e Luriaas Martins",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "3",
+ pages = "1993--2006",
+ numpages = "13",
+ year = "1991",
+ month = jan,
+ doi = "10.1103/PhysRevB.43.1993",
+ publisher = "American Physical Society",
+}
+
+@Article{vanderbilt90,
+ title = "Soft self-consistent pseudopotentials in a generalized
+ eigenvalue formalism",
+ author = "David Vanderbilt",
+ journal = "Phys. Rev. B",
+ volume = "41",
+ number = "11",
+ pages = "7892--7895",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevB.41.7892",
+ publisher = "American Physical Society",
+ notes = "vasp pseudopotentials",
+}
+
+@Article{ceperley80,
+ title = "Ground State of the Electron Gas by a Stochastic
+ Method",
+ author = "D. M. Ceperley and B. J. Alder",
+ journal = "Phys. Rev. Lett.",
+ volume = "45",
+ number = "7",
+ pages = "566--569",
+ numpages = "3",
+ year = "1980",
+ month = aug,
+ doi = "10.1103/PhysRevLett.45.566",
+ publisher = "American Physical Society",
+}
+
+@Article{perdew81,
+ title = "Self-interaction correction to density-functional
+ approximations for many-electron systems",
+ author = "J. P. Perdew and Alex Zunger",
+ journal = "Phys. Rev. B",
+ volume = "23",
+ number = "10",
+ pages = "5048--5079",
+ numpages = "31",
+ year = "1981",
+ month = may,
+ doi = "10.1103/PhysRevB.23.5048",
+ publisher = "American Physical Society",
+}
+
+@Article{perdew86,
+ title = "Accurate and simple density functional for the
+ electronic exchange energy: Generalized gradient
+ approximation",
+ author = "John P. Perdew and Yue Wang",
+ journal = "Phys. Rev. B",
+ volume = "33",
+ number = "12",
+ pages = "8800--8802",
+ numpages = "2",
+ year = "1986",
+ month = jun,
+ doi = "10.1103/PhysRevB.33.8800",
+ publisher = "American Physical Society",
+ notes = "rapid communication gga",
+}
+
+@Article{perdew02,
+ title = "Generalized gradient approximations for exchange and
+ correlation: {A} look backward and forward",
+ journal = "Physica B",
+ volume = "172",
+ number = "1-2",
+ pages = "1--6",
+ year = "1991",
+ note = "",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(91)90409-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
+ author = "John P. Perdew",
+ notes = "gga overview",
+}
+
+@Article{perdew92,
+ title = "Atoms, molecules, solids, and surfaces: Applications
+ of the generalized gradient approximation for exchange
+ and correlation",
+ author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
+ Koblar A. Jackson and Mark R. Pederson and D. J. Singh
+ and Carlos Fiolhais",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "11",
+ pages = "6671--6687",
+ numpages = "16",
+ year = "1992",
+ month = sep,
+ doi = "10.1103/PhysRevB.46.6671",
+ publisher = "American Physical Society",
+ notes = "gga pw91 (as in vasp)",
+}
+
+@Article{chadi73,
+ title = "Special Points in the Brillouin Zone",
+ author = "D. J. Chadi and Marvin L. Cohen",
+ journal = "Phys. Rev. B",
+ volume = "8",
+ number = "12",
+ pages = "5747--5753",
+ numpages = "6",
+ year = "1973",
+ month = dec,
+ doi = "10.1103/PhysRevB.8.5747",
+ publisher = "American Physical Society",
+}
+
+@Article{baldereschi73,
+ title = "Mean-Value Point in the Brillouin Zone",
+ author = "A. Baldereschi",
+ journal = "Phys. Rev. B",
+ volume = "7",
+ number = "12",
+ pages = "5212--5215",
+ numpages = "3",
+ year = "1973",
+ month = jun,
+ doi = "10.1103/PhysRevB.7.5212",
+ publisher = "American Physical Society",
+ notes = "mean value k point",
+}
+
+@Article{monkhorst76,
+ title = "Special points for Brillouin-zone integrations",
+ author = "Hendrik J. Monkhorst and James D. Pack",
+ journal = "Phys. Rev. B",
+ volume = "13",
+ number = "12",
+ pages = "5188--5192",
+ numpages = "4",
+ year = "1976",
+ month = jun,
+ doi = "10.1103/PhysRevB.13.5188",
+ publisher = "American Physical Society",
+}
+
+@Article{zhu98,
+ title = "Ab initio pseudopotential calculations of dopant
+ diffusion in Si",
+ journal = "Comput. Mater. Sci.",
+ volume = "12",
+ number = "4",
+ pages = "309--318",
+ year = "1998",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/S0927-0256(98)00023-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
+ author = "Jing Zhu",
+ keywords = "TED (transient enhanced diffusion)",
+ keywords = "Boron dopant",
+ keywords = "Carbon dopant",
+ keywords = "Defect",
+ keywords = "ab initio pseudopotential method",
+ keywords = "Impurity cluster",
+ notes = "binding of c to si interstitial, c in si defects",
+}
+
+@Article{nejim95,
+ author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
+ collaboration = "",
+ title = "Si{C} buried layer formation by ion beam synthesis at
+ 950 [degree]{C}",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Appl. Phys. Lett.",
+ volume = "66",
+ number = "20",
+ pages = "2646--2648",
+ keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
+ CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
+ 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
+ ELECTRON MICROSCOPY",
+ URL = "http://link.aip.org/link/?APL/66/2646/1",
+ doi = "10.1063/1.113112",
+ notes = "precipitation mechanism by substitutional carbon, si
+ self interstitials react with further implanted c",
+}
+
+@Article{guedj98,
+ author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
+ Kolodzey and A. Hairie",
+ collaboration = "",
+ title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
+ alloys",
+ publisher = "AIP",
+ year = "1998",
+ journal = "J. Appl. Phys.",
+ volume = "84",
+ number = "8",
+ pages = "4631--4633",
+ keywords = "silicon compounds; precipitation; localised modes;
+ semiconductor epitaxial layers; infrared spectra;
+ Fourier transform spectra; thermal stability;
+ annealing",
+ URL = "http://link.aip.org/link/?JAP/84/4631/1",
+ doi = "10.1063/1.368703",
+ notes = "coherent 3C-SiC, topotactic, critical coherence size",
+}
+
+@Article{jones04,
+ author = "R Jones and B J Coomer and P R Briddon",
+ title = "Quantum mechanical modelling of defects in
+ semiconductors",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "16",
+ number = "27",
+ pages = "S2643",
+ URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
+ year = "2004",
+ notes = "ab inito dft intro, vibrational modes, c defect in
+ si",
+}
+
+@Article{jones89,
+ doi = "10.1103/RevModPhys.61.689",
+ month = jul,
+ issue = "3",
+ author = "R. O. Jones and O. Gunnarsson",
+ year = "1989",
+ URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689",
+ publisher = "American Physical Society",
+ title = "The density functional formalism, its applications and
+ prospects",
+ pages = "689--746",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ notes = "dft intro",
+}
+
+@Article{park02,
+ author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
+ T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
+ J. E. Greene and S. G. Bishop",
+ collaboration = "",
+ title = "Carbon incorporation pathways and lattice sites in
+ Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
+ molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "2002",
+ journal = "J. Appl. Phys.",
+ volume = "91",
+ number = "9",
+ pages = "5716--5727",
+ URL = "http://link.aip.org/link/?JAP/91/5716/1",
+ doi = "10.1063/1.1465122",
+ notes = "c substitutional incorporation pathway, dft and expt",
+}
+
+@Article{leary97,
+ title = "Dynamic properties of interstitial carbon and
+ carbon-carbon pair defects in silicon",
+ author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
+ Torres",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "4",
+ pages = "2188--2194",
+ numpages = "6",
+ year = "1997",
+ month = jan,
+ doi = "10.1103/PhysRevB.55.2188",
+ publisher = "American Physical Society",
+ notes = "ab initio c in si and di-carbon defect, no formation
+ energies, different migration barriers and paths",
+}
+
+@Article{burnard93,
+ title = "Interstitial carbon and the carbon-carbon pair in
+ silicon: Semiempirical electronic-structure
+ calculations",
+ author = "Matthew J. Burnard and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "16",
+ pages = "10217--10225",
+ numpages = "8",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevB.47.10217",
+ publisher = "American Physical Society",
+ notes = "semi empirical mndo, pm3 and mindo3 c in si and di
+ carbon defect, formation energies",
+}
+
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
+@Article{kaxiras96,
+ title = "Review of atomistic simulations of surface diffusion
+ and growth on semiconductors",
+ journal = "Comput. Mater. Sci.",
+ volume = "6",
+ number = "2",
+ pages = "158--172",
+ year = "1996",
+ note = "Proceedings of the Workshop on Virtual Molecular Beam
+ Epitaxy",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00030-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
+ author = "Efthimios Kaxiras",
+ notes = "might contain c 100 db formation energy, overview md,
+ tight binding, first principles",
+}
+
+@Article{kaukonen98,
+ title = "Effect of {N} and {B} doping on the growth of {CVD}
+ diamond
+ $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
+ surfaces",
+ author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
+ M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
+ Th. Frauenheim",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "16",
+ pages = "9965--9970",
+ numpages = "5",
+ year = "1998",
+ month = apr,
+ doi = "10.1103/PhysRevB.57.9965",
+ publisher = "American Physical Society",
+ notes = "constrained conjugate gradient relaxation technique
+ (crt)",
+}
+
+@Article{gali03,
+ title = "Correlation between the antisite pair and the ${DI}$
+ center in Si{C}",
+ author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
+ I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
+ W. J. Choyke",
+ journal = "Phys. Rev. B",
+ volume = "67",
+ number = "15",
+ pages = "155203",
+ numpages = "5",
+ year = "2003",
+ month = apr,
+ doi = "10.1103/PhysRevB.67.155203",
+ publisher = "American Physical Society",
+}
+
+@Article{chen98,
+ title = "Production and recovery of defects in Si{C} after
+ irradiation and deformation",
+ journal = "J. Nucl. Mater.",
+ volume = "258-263",
+ number = "Part 2",
+ pages = "1803--1808",
+ year = "1998",
+ note = "",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(98)00139-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
+ author = "J. Chen and P. Jung and H. Klein",
+}
+
+@Article{weber01,
+ title = "Accumulation, dynamic annealing and thermal recovery
+ of ion-beam-induced disorder in silicon carbide",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "175-177",
+ number = "",
+ pages = "26--30",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(00)00542-5",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
+ author = "W. J. Weber and W. Jiang and S. Thevuthasan",
+}
+
+@Article{bockstedte03,
+ title = "Ab initio study of the migration of intrinsic defects
+ in $3{C}-Si{C}$",
+ author = "Michel Bockstedte and Alexander Mattausch and Oleg
+ Pankratov",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "20",
+ pages = "205201",
+ numpages = "17",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.205201",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{rauls03a,
+ title = "Theoretical study of vacancy diffusion and
+ vacancy-assisted clustering of antisites in Si{C}",
+ author = "E. Rauls and Th. Frauenheim and A. Gali and P.
+ De\'ak",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "15",
+ pages = "155208",
+ numpages = "9",
+ year = "2003",
+ month = oct,
+ doi = "10.1103/PhysRevB.68.155208",
+ publisher = "American Physical Society",
+}
+
+@Article{losev27,
+ journal = "Telegrafiya i Telefoniya bez Provodov",
+ volume = "44",
+ pages = "485--494",
+ year = "1927",
+ author = "O. V. Lossev",
+}
+
+@Article{losev28,
+ title = "Luminous carborundum detector and detection effect and
+ oscillations with crystals",
+ journal = "Philos. Mag. Series 7",
+ volume = "6",
+ number = "39",
+ pages = "1024--1044",
+ year = "1928",
+ URL = "http://www.informaworld.com/10.1080/14786441108564683",
+ author = "O. V. Lossev",
+}
+
+@Article{losev29,
+ journal = "Physik. Zeitschr.",
+ volume = "30",
+ pages = "920--923",
+ year = "1929",
+ author = "O. V. Lossev",
+}
+
+@Article{losev31,
+ journal = "Physik. Zeitschr.",
+ volume = "32",
+ pages = "692--696",
+ year = "1931",
+ author = "O. V. Lossev",
+}
+
+@Article{losev33,
+ journal = "Physik. Zeitschr.",
+ volume = "34",
+ pages = "397--403",
+ year = "1933",
+ author = "O. V. Lossev",
+}
+
+@Article{round07,
+ title = "A note on carborundum",
+ journal = "Electrical World",
+ volume = "49",
+ pages = "308",
+ year = "1907",
+ author = "H. J. Round",
+}
+
+@Article{vashishath08,
+ title = "Recent trends in silicon carbide device research",
+ journal = "Mj. Int. J. Sci. Tech.",
+ volume = "2",
+ number = "03",
+ pages = "444--470",
+ year = "2008",
+ author = "Munish Vashishath and Ashoke K. Chatterjee",
+ URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
+ notes = "sic polytype electronic properties",
+}
+
+@Article{nelson69,
+ author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
+ collaboration = "",
+ title = "Growth and Properties of beta-Si{C} Single Crystals",
+ publisher = "AIP",
+ year = "1966",
+ journal = "J. Appl. Phys.",
+ volume = "37",
+ number = "1",
+ pages = "333--336",
+ URL = "http://link.aip.org/link/?JAP/37/333/1",
+ doi = "10.1063/1.1707837",
+ notes = "sic melt growth",
+}
+
+@Article{arkel25,
+ author = "A. E. van Arkel and J. H. de Boer",
+ title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
+ und Thoriummetall",
+ publisher = "WILEY-VCH Verlag GmbH",
+ year = "1925",
+ journal = "Z. Anorg. Chem.",
+ volume = "148",
+ pages = "345--350",
+ URL = "http://dx.doi.org/10.1002/zaac.19251480133",
+ doi = "10.1002/zaac.19251480133",
+ notes = "van arkel apparatus",
+}
+
+@Article{moers31,
+ author = "K. Moers",
+ year = "1931",
+ journal = "Z. Anorg. Chem.",
+ volume = "198",
+ pages = "293",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{kendall53,
+ author = "J. T. Kendall",
+ title = "Electronic Conduction in Silicon Carbide",
+ publisher = "AIP",
+ year = "1953",
+ journal = "J. Chem. Phys.",
+ volume = "21",
+ number = "5",
+ pages = "821--827",
+ URL = "http://link.aip.org/link/?JCP/21/821/1",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{lely55,
+ author = "J. A. Lely",
+ year = "1955",
+ journal = "Ber. Deut. Keram. Ges.",
+ volume = "32",
+ pages = "229",
+ notes = "lely sublimation growth process",
+}
+
+@Article{knippenberg63,
+ author = "W. F. Knippenberg",
+ year = "1963",
+ journal = "Philips Res. Repts.",
+ volume = "18",
+ pages = "161",
+ notes = "acheson process",
+}
+
+@Article{hoffmann82,
+ author = "L. Hoffmann and G. Ziegler and D. Theis and C.
+ Weyrich",
+ collaboration = "",
+ title = "Silicon carbide blue light emitting diodes with
+ improved external quantum efficiency",
+ publisher = "AIP",
+ year = "1982",
+ journal = "J. Appl. Phys.",
+ volume = "53",
+ number = "10",
+ pages = "6962--6967",
+ keywords = "light emitting diodes; silicon carbides; quantum
+ efficiency; visible radiation; experimental data;
+ epitaxy; fabrication; medium temperature; layers;
+ aluminium; nitrogen; substrates; pn junctions;
+ electroluminescence; spectra; current density;
+ optimization",
+ URL = "http://link.aip.org/link/?JAP/53/6962/1",
+ doi = "10.1063/1.330041",
+ notes = "blue led, sublimation process",
+}
+
+@Article{neudeck95,
+ author = "Philip Neudeck",
+ affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+ Road 44135 Cleveland OH",
+ title = "Progress in silicon carbide semiconductor electronics
+ technology",
+ journal = "J. Electron. Mater.",
+ publisher = "Springer Boston",
+ ISSN = "0361-5235",
+ keyword = "Chemistry and Materials Science",
+ pages = "283--288",
+ volume = "24",
+ issue = "4",
+ URL = "http://dx.doi.org/10.1007/BF02659688",
+ note = "10.1007/BF02659688",
+ year = "1995",
+ notes = "sic data, advantages of 3c sic",
+}
+
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "2002 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "2001 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Proc.",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+}
+
+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{ryu01,
+ author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W.
+ Palmour",
+ journal = "IEEE Electron Device Lett.",
+ title = "1800 {V} {NPN} bipolar junction transistors in
+ 4{H}-Si{C}",
+ year = "2001",
+ month = mar,
+ volume = "22",
+ number = "3",
+ pages = "124--126",
+ keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction
+ transistor;SiC;blocking voltage;current gain;deep level
+ acceptor;minority carrier lifetime;on-resistance;power
+ switching device;temperature coefficient;carrier
+ lifetime;deep levels;minority carriers;power bipolar
+ transistors;silicon compounds;wide band gap
+ semiconductors;",
+ doi = "10.1109/55.910617",
+ ISSN = "0741-3106",
+}
+
+@Article{baliga96,
+ author = "B. J. Baliga",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Trends in power semiconductor devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1717--1731",
+ keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated
+ devices;MOS-gated thyristors;MPS rectifier;PIN
+ rectifier;Schottky rectifier;Si;SiC;SiC based
+ switches;TMBS rectifier;UMOS technology;VMOS
+ technology;bipolar power transistor;high voltage power
+ rectifiers;low voltage power rectifiers;power
+ MOSFET;power losses;power semiconductor devices;power
+ switch technology;review;semiconductor device
+ technology;MOS-controlled thyristors;bipolar transistor
+ switches;field effect transistor switches;gallium
+ arsenide;insulated gate bipolar transistors;p-i-n
+ diodes;power bipolar transistors;power field effect
+ transistors;power semiconductor devices;power
+ semiconductor diodes;power semiconductor
+ switches;reviews;silicon;silicon compounds;solid-state
+ rectifiers;thyristors;",
+ doi = "10.1109/16.536818",
+ ISSN = "0018-9383",
+}
+
+@Article{bhatnagar92,
+ author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga",
+ journal = "IEEE Electron Device Lett.",
+ title = "Silicon-carbide high-voltage (400 {V}) Schottky
+ barrier diodes",
+ year = "1992",
+ month = oct,
+ volume = "13",
+ number = "10",
+ pages = "501--503",
+ keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier
+ diodes;breakdown
+ voltages;characteristics;fabrication;forward I-V
+ characteristics;forward voltage drop;on-state current
+ density;rectifiers;reverse I-V characteristics;reverse
+ recovery characteristics;sharp breakdown;temperature
+ range;Schottky-barrier diodes;platinum;power
+ electronics;semiconductor materials;silicon
+ compounds;solid-state rectifiers;",
+ doi = "10.1109/55.192814",
+ ISSN = "0741-3106",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
+
+@Article{weitzel96,
+ author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
+ and K. Moore and K. K. Nordquist and S. Allen and C.
+ Thero and M. Bhatnagar",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide high-power devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1732--1741",
+ keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
+ barrier diodes;SiC;SiC devices;UMOSFET;current
+ density;high electric breakdown field;high saturated
+ electron drift velocity;high thermal
+ conductivity;high-power devices;packaged SIT;submicron
+ gate length MESFET;Schottky diodes;current
+ density;electric breakdown;power MESFET;power
+ MOSFET;power semiconductor devices;power semiconductor
+ diodes;reviews;silicon compounds;static induction
+ transistors;wide band gap semiconductors;",
+ doi = "10.1109/16.536819",
+ ISSN = "0018-9383",
+ notes = "high power devices",
+}
+
+@Article{zhu08,
+ author = "Lin Zhu and T. P. Chow",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
+ year = "2008",
+ month = aug,
+ volume = "55",
+ number = "8",
+ pages = "1871--1874",
+ keywords = "H-SiC;OFF-state characteristics;ON-state
+ characteristics;blocking capability;high-voltage
+ Schottky rectifier;junction barrier Schottky
+ rectifier;lateral channel JBS rectifier;leakage
+ current;pinlike reverse characteristics;Schottky
+ barriers;Schottky diodes;leakage currents;rectifying
+ circuits;",
+ doi = "10.1109/TED.2008.926642",
+ ISSN = "0018-9383",
+}
+
+@Article{brown93,
+ author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
+ Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
+ and G. Gati and J. M. Pimbley and W. E. Schneider",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide {UV} photodiodes",
+ year = "1993",
+ month = feb,
+ volume = "40",
+ number = "2",
+ pages = "325--333",
+ keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
+ responsivity characteristics;low dark current;low light
+ level UV detection;quantum
+ efficiency;reproducibility;reverse current
+ leakage;short circuit output current;leakage
+ currents;photodiodes;semiconductor
+ materials;short-circuit currents;silicon
+ compounds;ultraviolet detectors;",
+ doi = "10.1109/16.182509",
+ ISSN = "0018-9383",
+ notes = "sic photo diodes, uv detector",
+}
+
+@Article{yan04,
+ author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
+ and D. Franz and J. H. Zhao and M. Weiner",
+ journal = "IEEE J. Quantum Electron.",
+ title = "4{H}-Si{C} {UV} photo detectors with large area and
+ very high specific detectivity",
+ year = "2004",
+ month = sep,
+ volume = "40",
+ number = "9",
+ pages = "1315--1320",
+ keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
+ photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
+ SiC-Pt; leakage current; photoresponse spectra; quantum
+ efficiency; specific detectivity; Schottky diodes;
+ photodetectors; platinum; silicon compounds; wide band
+ gap semiconductors;",
+ doi = "10.1109/JQE.2004.833196",
+ ISSN = "0018-9197",
+ notes = "uv detector",
+}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Appl. Phys. Lett.",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}
+
+@Article{frank51,
+ author = "F. C. Frank",
+ title = "Capillary equilibria of dislocated crystals",
+ journal = "Acta Crystallogr.",
+ year = "1951",
+ volume = "4",
+ number = "6",
+ pages = "497--501",
+ month = nov,
+ doi = "10.1107/S0365110X51001690",
+ URL = "http://dx.doi.org/10.1107/S0365110X51001690",
+ notes = "micropipe",
+}
+
+@Article{heindl97,
+ author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G.
+ Pensl",
+ title = "Micropipes: Hollow Tubes in Silicon Carbide",
+ journal = "phys. status solidi (a)",
+ volume = "162",
+ number = "1",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ pages = "251--262",
+ year = "1997",
+ notes = "micropipe",
+}
+
+@Article{neudeck94_2,
+ author = "P. G. Neudeck and J. A. Powell",
+ journal = "IEEE Electron Device Lett.",
+ title = "Performance limiting micropipe defects in silicon
+ carbide wafers",
+ year = "1994",
+ month = feb,
+ volume = "15",
+ number = "2",
+ pages = "63--65",
+ keywords = "SiC;defect density;device ratings;epitaxially-grown pn
+ junction devices;micropipe defects;power devices;power
+ semiconductors;pre-avalanche reverse-bias point
+ failures;p-n homojunctions;power
+ electronics;semiconductor materials;silicon
+ compounds;",
+ doi = "10.1109/55.285372",
+ ISSN = "0741-3106",
+}
+
+@Article{pirouz87,
+ author = "P. Pirouz and C. M. Chorey and J. A. Powell",
+ collaboration = "",
+ title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "50",
+ number = "4",
+ pages = "221--223",
+ keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
+ MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
+ VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
+ ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
+ BOUNDARIES",
+ URL = "http://link.aip.org/link/?APL/50/221/1",
+ doi = "10.1063/1.97667",
+ notes = "apb 3c-sic heteroepitaxy on si",
+}
+
+@Article{shibahara86,
+ title = "Surface morphology of cubic Si{C}(100) grown on
+ Si(100) by chemical vapor deposition",
+ journal = "J. Cryst. Growth",
+ volume = "78",
+ number = "3",
+ pages = "538--544",
+ year = "1986",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(86)90158-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
+ author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
+ Matsunami",
+ notes = "defects in 3c-sis cvd on si, anti phase boundaries",
+}
+
+@Article{desjardins96,
+ author = "P. Desjardins and J. E. Greene",
+ collaboration = "",
+ title = "Step-flow epitaxial growth on two-domain surfaces",
+ publisher = "AIP",
+ year = "1996",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ number = "3",
+ pages = "1423--1434",
+ keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
+ FILM GROWTH; SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/79/1423/1",
+ doi = "10.1063/1.360980",
+ notes = "apb model",
+}
+
+@Article{henke95,
+ author = "S. Henke and B. Stritzker and B. Rauschenbach",
+ collaboration = "",
+ title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
+ carbonization of silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "78",
+ number = "3",
+ pages = "2070--2073",
+ keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
+ FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
+ STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/78/2070/1",
+ doi = "10.1063/1.360184",
+ notes = "ssmbe of sic on si, lower temperatures",
+}
+
+@Article{fuyuki89,
+ title = "Atomic layer epitaxy of cubic Si{C} by gas source
+ {MBE} using surface superstructure",
+ journal = "J. Cryst. Growth",
+ volume = "95",
+ number = "1-4",
+ pages = "461--463",
+ year = "1989",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(89)90442-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
+ author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
+ Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu92,
+ author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
+ and Takashi Fuyuki and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Lattice-matched epitaxial growth of single crystalline
+ 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "7",
+ pages = "824--826",
+ keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
+ EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
+ INTERFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/824/1",
+ doi = "10.1063/1.107430",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu90,
+ title = "Atomic level control in gas source {MBE} growth of
+ cubic Si{C}",
+ journal = "J. Cryst. Growth",
+ volume = "99",
+ number = "1-4",
+ pages = "520--524",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90575-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
+ author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
+ Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic",
+}
+
+@Article{fuyuki93,
+ title = "Atomic layer epitaxy controlled by surface
+ superstructures in Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "225--229",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90159-M",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
+ author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
+ Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{hara93,
+ title = "Microscopic mechanisms of accurate layer-by-layer
+ growth of [beta]-Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "240--243",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90162-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
+ author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
+ and S. Misawa and E. Sakuma and S. Yoshida",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{tanaka94,
+ author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
+ collaboration = "",
+ title = "Effects of gas flow ratio on silicon carbide thin film
+ growth mode and polytype formation during gas-source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "65",
+ number = "22",
+ pages = "2851--2853",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
+ TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
+ NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
+ FLOW; FLOW RATE",
+ URL = "http://link.aip.org/link/?APL/65/2851/1",
+ doi = "10.1063/1.112513",
+ notes = "gas source mbe of 6h-sic on 6h-sic",
+}
+
+@Article{fuyuki97,
+ author = "T. Fuyuki and T. Hatayama and H. Matsunami",
+ title = "Heterointerface Control and Epitaxial Growth of
+ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "phys. status solidi (b)",
+ volume = "202",
+ pages = "359--378",
+ notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
+ temperatures 750",
+}
+
+@Article{takaoka98,
+ title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
+ journal = "J. Cryst. Growth",
+ volume = "183",
+ number = "1-2",
+ pages = "175--182",
+ year = "1998",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/S0022-0248(97)00391-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
+ author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
+ keywords = "Reflection high-energy electron diffraction (RHEED)",
+ keywords = "Scanning electron microscopy (SEM)",
+ keywords = "Silicon carbide",
+ keywords = "Silicon",
+ keywords = "Island growth",
+ notes = "lower temperature, 550-700",
+}
+
+@Article{hatayama95,
+ title = "Low-temperature heteroepitaxial growth of cubic Si{C}
+ on Si using hydrocarbon radicals by gas source
+ molecular beam epitaxy",
+ journal = "J. Cryst. Growth",
+ volume = "150",
+ number = "Part 2",
+ pages = "934--938",
+ year = "1995",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)80077-P",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
+ author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
+ and Hiroyuki Matsunami",
+}
+
+@Article{heine91,
+ author = "Volker Heine and Ching Cheng and Richard J. Needs",
+ title = "The Preference of Silicon Carbide for Growth in the
+ Metastable Cubic Form",
+ journal = "J. Am. Ceram. Soc.",
+ volume = "74",
+ number = "10",
+ publisher = "Blackwell Publishing Ltd",
+ ISSN = "1551-2916",
+ URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
+ doi = "10.1111/j.1151-2916.1991.tb06811.x",
+ pages = "2630--2633",
+ keywords = "silicon carbide, crystal growth, crystal structure,
+ calculations, stability",
+ year = "1991",
+ notes = "3c-sic metastable, 3c-sic preferred growth, sic
+ polytype dft calculation refs",
+}
+
+@Article{allendorf91,
+ title = "The adsorption of {H}-atoms on polycrystalline
+ [beta]-silicon carbide",
+ journal = "Surf. Sci.",
+ volume = "258",
+ number = "1-3",
+ pages = "177--189",
+ year = "1991",
+ note = "",
+ ISSN = "0039-6028",
+ doi = "DOI: 10.1016/0039-6028(91)90912-C",
+ URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
+ author = "Mark D. Allendorf and Duane A. Outka",
+ notes = "h adsorption on 3c-sic",
+}
+
+@Article{eaglesham93,
+ author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
+ D. P. Adams and S. M. Yalisove",
+ collaboration = "",
+ title = "Effect of {H} on Si molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "11",
+ pages = "6615--6618",
+ keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
+ CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
+ DIFFUSION; ADSORPTION",
+ URL = "http://link.aip.org/link/?JAP/74/6615/1",
+ doi = "10.1063/1.355101",
+ notes = "h incorporation on si surface, lower surface
+ mobility",
+}
+
+@Article{newman85,
+ author = "Ronald C. Newman",
+ title = "Carbon in Crystalline Silicon",
+ journal = "MRS Proc.",
+ volume = "59",
+ number = "",
+ pages = "403",
+ year = "1985",
+ doi = "10.1557/PROC-59-403",
+ URL = "http://dx.doi.org/10.1557/PROC-59-403",
+ eprint = "http://journals.cambridge.org/article_S194642740054367X",
+}
+
+@Article{newman61,
+ title = "The diffusivity of carbon in silicon",
+ journal = "J. Phys. Chem. Solids",
+ volume = "19",
+ number = "3-4",
+ pages = "230--234",
+ year = "1961",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(61)90032-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+ author = "R. C. Newman and J. Wakefield",
+ notes = "diffusivity of substitutional c in si",
+}
+
+@Article{goesele85,
+ author = "U. Gösele",
+ title = "The Role of Carbon and Point Defects in Silicon",
+ journal = "MRS Proc.",
+ volume = "59",
+ number = "",
+ pages = "419",
+ year = "1985",
+ doi = "10.1557/PROC-59-419",
+ URL = "http://dx.doi.org/10.1557/PROC-59-419",
+ eprint = "http://journals.cambridge.org/article_S1946427400543681",
+}
+
+@Article{mukashev82,
+ title = "Defects in Carbon-Implanted Silicon",
+ author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
+ Fukuoka and Haruo Saito",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "21",
+ number = "Part 1, No. 2",
+ pages = "399--400",
+ numpages = "1",
+ year = "1982",
+ URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
+ doi = "10.1143/JJAP.21.399",
+ publisher = "The Japan Society of Applied Physics",
+}
+
+@Article{puska98,
+ title = "Convergence of supercell calculations for point
+ defects in semiconductors: Vacancy in silicon",
+ author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
+ M. Nieminen",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "3",
+ pages = "1318--1325",
+ numpages = "7",
+ year = "1998",
+ month = jul,
+ doi = "10.1103/PhysRevB.58.1318",
+ publisher = "American Physical Society",
+ notes = "convergence k point supercell size, vacancy in
+ silicon",
+}
+
+@Article{serre95,
+ author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
+ Romano-Rodr\'{\i}guez and J. R. Morante and R.
+ K{\"{o}}gler and W. Skorupa",
+ collaboration = "",
+ title = "Spectroscopic characterization of phases formed by
+ high-dose carbon ion implantation in silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "77",
+ number = "7",
+ pages = "2978--2984",
+ keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
+ FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
+ PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
+ DEPENDENCE; PRECIPITATES; ANNEALING",
+ URL = "http://link.aip.org/link/?JAP/77/2978/1",
+ doi = "10.1063/1.358714",
+}
+
+@Article{romano-rodriguez96,
+ title = "Detailed analysis of [beta]-Si{C} formation by high
+ dose carbon ion implantation in silicon",
+ journal = "Materials Science and Engineering B",
+ volume = "36",
+ number = "1-3",
+ pages = "282--285",
+ year = "1996",
+ note = "European Materials Research Society 1995 Spring
+ Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
+ Oxygen in Silicon and in Other Elemental
+ Semiconductors",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/0921-5107(95)01283-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
+ author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
+ and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
+ and W. Skorupa",
+ keywords = "Silicon",
+ keywords = "Ion implantation",
+ notes = "incoherent 3c-sic precipitate",
+}
+
+@Article{davidson75,
+ title = "The iterative calculation of a few of the lowest
+ eigenvalues and corresponding eigenvectors of large
+ real-symmetric matrices",
+ journal = "J. Comput. Phys.",
+ volume = "17",
+ number = "1",
+ pages = "87--94",
+ year = "1975",
+ note = "",
+ ISSN = "0021-9991",
+ doi = "DOI: 10.1016/0021-9991(75)90065-0",
+ URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
+ author = "Ernest R. Davidson",
+}
+
+@Book{adorno_mm,
+ title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
+ Leben",
+ author = "T. W. Adorno",
+ ISBN = "978-3-518-01236-9",
+ URL = "http://books.google.com/books?id=coZqRAAACAAJ",
+ year = "1994",
+ publisher = "Suhrkamp",
+}
+
+@Misc{attenberger03,
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}
+
+@Article{zunger01,
+ author = "Alex Zunger",
+ title = "Pseudopotential Theory of Semiconductor Quantum Dots",
+ journal = "physica status solidi (b)",
+ volume = "224",
+ number = "3",
+ publisher = "WILEY-VCH Verlag Berlin GmbH",
+ ISSN = "1521-3951",
+ URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ pages = "727--734",
+ keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11,
+ S8.12",
+ year = "2001",
+ notes = "configuration-interaction method, ci",
+}
+
+@Article{robertson90,
+ author = "I. J. Robertson and M. C. Payne",
+ title = "k-point sampling and the k.p method in pseudopotential
+ total energy calculations",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "2",
+ number = "49",
+ pages = "9837",
+ URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010",
+ year = "1990",
+ notes = "kp method",
+}
+
+@Article{lange11,
+ volume = "84",
+ journal = "Phys. Rev. B",
+ author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg
+ Neugebauer",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101",
+ doi = "10.1103/PhysRevB.84.085101",
+ year = "2011",
+ title = "Construction and performance of fully numerical
+ optimum atomic basis sets",
+ issue = "8",
+ publisher = "American Physical Society",
+ numpages = "11",
+ pages = "085101",
+ notes = "quamol, basis set, for planc",
+}
+
projects / lectures / latex.git / blobdiff