}
@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon carbide electronic materials and devices",
+ journal = "MRS Bull.",
+ year = "1997",
+ volume = "22",
+ number = "3",
+ pages = "19--22",
+ publisher = "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
journal = "MRS Bull.",
}
@Article{zirkelbach11,
- title = "Combined ab initio and classical potential simulation
- study on silicon carbide precipitation",
- journal = "accepted for publication in Phys. Rev. B",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
abstract = "Atomistic simulations on the silicon carbide
precipitation in bulk silicon employing both, classical
potential and first-principles methods are presented.
year = "1994",
doi = "10.1557/PROC-354-171",
URL = "http://dx.doi.org/10.1557/PROC-354-171",
- eprint = "http://journals.cambridge.org/article_S1946427400420853",
notes = "first time ibs at moderate temperatures",
}
notes = "c int diffusion barrier",
}
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
notes = "cvd of 3c-sic on si, sic buffer layer",
}
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
}
@Article{parcas_md,
- title = "{PARCAS} molecular dynamics code",
+ journal = "{PARCAS} molecular dynamics code",
author = "K. Nordlund",
year = "2008",
}
title = "The Fitting of Pseudopotentials to Experimental Data
and Their Subsequent Application",
editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
- booktitle = "",
publisher = "Academic Press",
year = "1970",
volume = "24",
notes = "norm-conserving pseudopotentials",
}
+@Article{kleinman82,
+ journal = "Phys. Rev. Lett.",
+ month = may,
+ doi = "10.1103/PhysRevLett.48.1425",
+ issue = "20",
+ author = "Leonard Kleinman and D. M. Bylander",
+ title = "Efficacious Form for Model Pseudopotentials",
+ year = "1982",
+ URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425",
+ publisher = "American Physical Society",
+ pages = "1425--1428",
+ volume = "48",
+}
+
@Article{troullier91,
title = "Efficient pseudopotentials for plane-wave
calculations",
si",
}
+@Article{jones89,
+ doi = "10.1103/RevModPhys.61.689",
+ month = jul,
+ issue = "3",
+ author = "R. O. Jones and O. Gunnarsson",
+ year = "1989",
+ URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689",
+ publisher = "American Physical Society",
+ title = "The density functional formalism, its applications and
+ prospects",
+ pages = "689--746",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ notes = "dft intro",
+}
+
@Article{park02,
author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
Road 44135 Cleveland OH",
title = "Progress in silicon carbide semiconductor electronics
technology",
- journal = "Journal of Electronic Materials",
+ journal = "J. Electron. Mater.",
publisher = "Springer Boston",
ISSN = "0361-5235",
keyword = "Chemistry and Materials Science",
notes = "sic data, advantages of 3c sic",
}
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "2002 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "2001 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Proc.",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+}
+
@Article{bhatnagar93,
author = "M. Bhatnagar and B. J. Baliga",
- journal = "Electron Devices, IEEE Transactions on",
+ journal = "IEEE Trans. Electron Devices",
title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
devices",
year = "1993",
notes = "comparison 3c 6h sic and si devices",
}
+@Article{ryu01,
+ author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W.
+ Palmour",
+ journal = "IEEE Electron Device Lett.",
+ title = "1800 {V} {NPN} bipolar junction transistors in
+ 4{H}-Si{C}",
+ year = "2001",
+ month = mar,
+ volume = "22",
+ number = "3",
+ pages = "124--126",
+ keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction
+ transistor;SiC;blocking voltage;current gain;deep level
+ acceptor;minority carrier lifetime;on-resistance;power
+ switching device;temperature coefficient;carrier
+ lifetime;deep levels;minority carriers;power bipolar
+ transistors;silicon compounds;wide band gap
+ semiconductors;",
+ doi = "10.1109/55.910617",
+ ISSN = "0741-3106",
+}
+
+@Article{baliga96,
+ author = "B. J. Baliga",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Trends in power semiconductor devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1717--1731",
+ keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated
+ devices;MOS-gated thyristors;MPS rectifier;PIN
+ rectifier;Schottky rectifier;Si;SiC;SiC based
+ switches;TMBS rectifier;UMOS technology;VMOS
+ technology;bipolar power transistor;high voltage power
+ rectifiers;low voltage power rectifiers;power
+ MOSFET;power losses;power semiconductor devices;power
+ switch technology;review;semiconductor device
+ technology;MOS-controlled thyristors;bipolar transistor
+ switches;field effect transistor switches;gallium
+ arsenide;insulated gate bipolar transistors;p-i-n
+ diodes;power bipolar transistors;power field effect
+ transistors;power semiconductor devices;power
+ semiconductor diodes;power semiconductor
+ switches;reviews;silicon;silicon compounds;solid-state
+ rectifiers;thyristors;",
+ doi = "10.1109/16.536818",
+ ISSN = "0018-9383",
+}
+
+@Article{bhatnagar92,
+ author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga",
+ journal = "IEEE Electron Device Lett.",
+ title = "Silicon-carbide high-voltage (400 {V}) Schottky
+ barrier diodes",
+ year = "1992",
+ month = oct,
+ volume = "13",
+ number = "10",
+ pages = "501--503",
+ keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier
+ diodes;breakdown
+ voltages;characteristics;fabrication;forward I-V
+ characteristics;forward voltage drop;on-state current
+ density;rectifiers;reverse I-V characteristics;reverse
+ recovery characteristics;sharp breakdown;temperature
+ range;Schottky-barrier diodes;platinum;power
+ electronics;semiconductor materials;silicon
+ compounds;solid-state rectifiers;",
+ doi = "10.1109/55.192814",
+ ISSN = "0741-3106",
+}
+
@Article{neudeck94,
author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
A. Powell and C. S. Salupo and L. G. Matus",
- journal = "Electron Devices, IEEE Transactions on",
+ journal = "IEEE Trans. Electron Devices",
title = "Electrical properties of epitaxial 3{C}- and
6{H}-Si{C} p-n junction diodes produced side-by-side on
6{H}-Si{C} substrates",
substrate",
}
+@Article{weitzel96,
+ author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
+ and K. Moore and K. K. Nordquist and S. Allen and C.
+ Thero and M. Bhatnagar",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide high-power devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1732--1741",
+ keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
+ barrier diodes;SiC;SiC devices;UMOSFET;current
+ density;high electric breakdown field;high saturated
+ electron drift velocity;high thermal
+ conductivity;high-power devices;packaged SIT;submicron
+ gate length MESFET;Schottky diodes;current
+ density;electric breakdown;power MESFET;power
+ MOSFET;power semiconductor devices;power semiconductor
+ diodes;reviews;silicon compounds;static induction
+ transistors;wide band gap semiconductors;",
+ doi = "10.1109/16.536819",
+ ISSN = "0018-9383",
+ notes = "high power devices",
+}
+
+@Article{zhu08,
+ author = "Lin Zhu and T. P. Chow",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
+ year = "2008",
+ month = aug,
+ volume = "55",
+ number = "8",
+ pages = "1871--1874",
+ keywords = "H-SiC;OFF-state characteristics;ON-state
+ characteristics;blocking capability;high-voltage
+ Schottky rectifier;junction barrier Schottky
+ rectifier;lateral channel JBS rectifier;leakage
+ current;pinlike reverse characteristics;Schottky
+ barriers;Schottky diodes;leakage currents;rectifying
+ circuits;",
+ doi = "10.1109/TED.2008.926642",
+ ISSN = "0018-9383",
+}
+
+@Article{brown93,
+ author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
+ Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
+ and G. Gati and J. M. Pimbley and W. E. Schneider",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide {UV} photodiodes",
+ year = "1993",
+ month = feb,
+ volume = "40",
+ number = "2",
+ pages = "325--333",
+ keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
+ responsivity characteristics;low dark current;low light
+ level UV detection;quantum
+ efficiency;reproducibility;reverse current
+ leakage;short circuit output current;leakage
+ currents;photodiodes;semiconductor
+ materials;short-circuit currents;silicon
+ compounds;ultraviolet detectors;",
+ doi = "10.1109/16.182509",
+ ISSN = "0018-9383",
+ notes = "sic photo diodes, uv detector",
+}
+
+@Article{yan04,
+ author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
+ and D. Franz and J. H. Zhao and M. Weiner",
+ journal = "IEEE J. Quantum Electron.",
+ title = "4{H}-Si{C} {UV} photo detectors with large area and
+ very high specific detectivity",
+ year = "2004",
+ month = sep,
+ volume = "40",
+ number = "9",
+ pages = "1315--1320",
+ keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
+ photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
+ SiC-Pt; leakage current; photoresponse spectra; quantum
+ efficiency; specific detectivity; Schottky diodes;
+ photodetectors; platinum; silicon compounds; wide band
+ gap semiconductors;",
+ doi = "10.1109/JQE.2004.833196",
+ ISSN = "0018-9197",
+ notes = "uv detector",
+}
+
@Article{schulze98,
author = "N. Schulze and D. L. Barrett and G. Pensl",
collaboration = "",
notes = "micropipe free 6h-sic pvt growth",
}
+@Article{frank51,
+ author = "F. C. Frank",
+ title = "Capillary equilibria of dislocated crystals",
+ journal = "Acta Crystallogr.",
+ year = "1951",
+ volume = "4",
+ number = "6",
+ pages = "497--501",
+ month = nov,
+ doi = "10.1107/S0365110X51001690",
+ URL = "http://dx.doi.org/10.1107/S0365110X51001690",
+ notes = "micropipe",
+}
+
+@Article{heindl97,
+ author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G.
+ Pensl",
+ title = "Micropipes: Hollow Tubes in Silicon Carbide",
+ journal = "phys. status solidi (a)",
+ volume = "162",
+ number = "1",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ pages = "251--262",
+ year = "1997",
+ notes = "micropipe",
+}
+
+@Article{neudeck94_2,
+ author = "P. G. Neudeck and J. A. Powell",
+ journal = "IEEE Electron Device Lett.",
+ title = "Performance limiting micropipe defects in silicon
+ carbide wafers",
+ year = "1994",
+ month = feb,
+ volume = "15",
+ number = "2",
+ pages = "63--65",
+ keywords = "SiC;defect density;device ratings;epitaxially-grown pn
+ junction devices;micropipe defects;power devices;power
+ semiconductors;pre-avalanche reverse-bias point
+ failures;p-n homojunctions;power
+ electronics;semiconductor materials;silicon
+ compounds;",
+ doi = "10.1109/55.285372",
+ ISSN = "0741-3106",
+}
+
@Article{pirouz87,
author = "P. Pirouz and C. M. Chorey and J. A. Powell",
collaboration = "",
year = "1994",
publisher = "Suhrkamp",
}
+
+@Misc{attenberger03,
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}
+
+@Article{zunger01,
+ author = "Alex Zunger",
+ title = "Pseudopotential Theory of Semiconductor Quantum Dots",
+ journal = "physica status solidi (b)",
+ volume = "224",
+ number = "3",
+ publisher = "WILEY-VCH Verlag Berlin GmbH",
+ ISSN = "1521-3951",
+ URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ pages = "727--734",
+ keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11,
+ S8.12",
+ year = "2001",
+ notes = "configuration-interaction method, ci",
+}
+
+@Article{robertson90,
+ author = "I. J. Robertson and M. C. Payne",
+ title = "k-point sampling and the k.p method in pseudopotential
+ total energy calculations",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "2",
+ number = "49",
+ pages = "9837",
+ URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010",
+ year = "1990",
+ notes = "kp method",
+}
+
+@Article{lange11,
+ volume = "84",
+ journal = "Phys. Rev. B",
+ author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg
+ Neugebauer",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101",
+ doi = "10.1103/PhysRevB.84.085101",
+ year = "2011",
+ title = "Construction and performance of fully numerical
+ optimum atomic basis sets",
+ issue = "8",
+ publisher = "American Physical Society",
+ numpages = "11",
+ pages = "085101",
+ notes = "quamol, basis set, for planc",
+}
+
projects / lectures / latex.git / blobdiff