% bibliography database
%
+@Article{schroedinger26,
+ author = "E. Schrödinger",
+ title = "Quantisierung als Eigenwertproblem",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "384",
+ number = "4",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19263840404",
+ doi = "10.1002/andp.19263840404",
+ pages = "361--376",
+ year = "1926",
+}
+
+@Article{bloch29,
+ author = "Felix Bloch",
+ affiliation = "Institut d. Universität f. theor. Physik Leipzig",
+ title = "Über die Quantenmechanik der Elektronen in
+ Kristallgittern",
+ journal = "Z. Phys.",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0939-7922",
+ keyword = "Physics and Astronomy",
+ pages = "555--600",
+ volume = "52",
+ issue = "7",
+ URL = "http://dx.doi.org/10.1007/BF01339455",
+ note = "10.1007/BF01339455",
+ year = "1929",
+}
+
@Article{albe_sic_pot,
author = "Paul Erhart and Karsten Albe",
title = "Analytical potential for atomistic simulations of
doi = "10.1103/PhysRevB.71.035211",
}
+@Article{erhart04,
+ title = "The role of thermostats in modeling vapor phase
+ condensation of silicon nanoparticles",
+ journal = "Appl. Surf. Sci.",
+ volume = "226",
+ number = "1-3",
+ pages = "12--18",
+ year = "2004",
+ note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2003.11.003",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
+ author = "Paul Erhart and Karsten Albe",
+}
+
@Article{albe2002,
title = "Modeling the metal-semiconductor interaction:
Analytical bond-order potential for platinum-carbon",
@Article{newman65,
title = "Vibrational absorption of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "26",
number = "2",
pages = "373--379",
title = "Effect of Carbon on the Lattice Parameter of Silicon",
publisher = "AIP",
year = "1968",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "39",
number = "9",
pages = "4365--4368",
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "32",
number = "6",
pages = "1211--1219",
}
@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon carbide electronic materials and devices",
+ journal = "MRS Bull.",
+ year = "1997",
+ volume = "22",
+ number = "3",
+ pages = "19--22",
+ publisher = "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
journal = "MRS Bull.",
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
- journal = "Appl. Phys. A: Mater. Sci. Process.",
+ journal = "Appl. Phys. A",
volume = "76",
pages = "827--835",
month = mar,
@Article{skorupa96,
title = "Carbon-mediated effects in silicon and in
silicon-related materials",
- journal = "Materials Chemistry and Physics",
+ journal = "Mater. Chem. Phys.",
volume = "44",
number = "2",
pages = "101--143",
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
Diablo",
- journal = "Comptes rendus de l'Académie des Sciences",
+ journal = "C. R. Acad. Sci.",
volume = "139",
pages = "773--786",
year = "1904",
author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
Calvin H. Carter Jr. and D. Asbury",
title = "Si{C} Seeded Boule Growth",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "3--8",
year = "1998",
entropy calculations",
}
+@Article{munro99,
+ title = "Defect migration in crystalline silicon",
+ author = "Lindsey J. Munro and David J. Wales",
+ journal = "Phys. Rev. B",
+ volume = "59",
+ number = "6",
+ pages = "3969--3980",
+ numpages = "11",
+ year = "1999",
+ month = feb,
+ doi = "10.1103/PhysRevB.59.3969",
+ publisher = "American Physical Society",
+ notes = "eigenvector following method, vacancy and interstiial
+ defect migration mechanisms",
+}
+
@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
silicon, si self interstitials, free energy",
}
+@Article{mattsson08,
+ title = "Electronic surface error in the Si interstitial
+ formation energy",
+ author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
+ Armiento",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "15",
+ pages = "155211",
+ numpages = "7",
+ year = "2008",
+ month = apr,
+ doi = "10.1103/PhysRevB.77.155211",
+ publisher = "American Physical Society",
+ notes = "si self interstitial formation energies by dft",
+}
+
@Article{goedecker02,
title = "A Fourfold Coordinated Point Defect in Silicon",
author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
@Article{bean70,
title = "Low temperature electron irradiation of silicon
containing carbon",
- journal = "Solid State Communications",
+ journal = "Solid State Commun.",
volume = "8",
number = "3",
pages = "175--177",
silicon",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "6",
pages = "3815--3820",
@Article{foell77,
title = "The formation of swirl defects in silicon by
agglomeration of self-interstitials",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "40",
number = "1",
pages = "90--108",
@Article{foell81,
title = "Microdefects in silicon and their relation to point
defects",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 2",
pages = "907--916",
@InProceedings{werner96,
author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
Eichler",
- booktitle = "Ion Implantation Technology. Proceedings of the 11th
- International Conference on",
+ booktitle = "Proceedings of the 11th International Conference on
+ Ion Implantation Technology.",
title = "{TEM} investigation of {C}-Si defects in carbon
implanted silicon",
year = "1996",
silicon",
publisher = "AIP",
year = "1984",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "45",
number = "3",
pages = "268--269",
Ge[sup + ] and {C}[sup + ] implantation",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "57",
number = "22",
pages = "2345--2347",
title = "Metastable SiGe{C} formation by solid phase epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "63",
number = "20",
pages = "2786--2788",
doi = "10.1063/1.110334",
}
-@article{goorsky92,
-author = {M. S. Goorsky and S. S. Iyer and K. Eberl and F. Legoues and J. Angilello and F. Cardone},
-collaboration = {},
-title = {Thermal stability of Si[sub 1 - x]C[sub x]/Si strained layer superlattices},
-publisher = {AIP},
-year = {1992},
-journal = {Applied Physics Letters},
-volume = {60},
-number = {22},
-pages = {2758-2760},
-keywords = {SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS},
-url = {http://link.aip.org/link/?APL/60/2758/1},
-doi = {10.1063/1.106868}
+@Article{goorsky92,
+ author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
+ Legoues and J. Angilello and F. Cardone",
+ collaboration = "",
+ title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
+ strained layer superlattices",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Appl. Phys. Lett.",
+ volume = "60",
+ number = "22",
+ pages = "2758--2760",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
+ MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
+ CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
+ RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
+ DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
+ URL = "http://link.aip.org/link/?APL/60/2758/1",
+ doi = "10.1063/1.106868",
}
@Article{strane94,
doi = "doi:10.1016/j.nimb.2006.12.118",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Periodically arranged, selforganised, nanometric,
+ amorphous precipitates have been observed after
+ high-fluence ion implantations into solids for a number
+ of ion/target combinations at certain implantation
+ conditions. A model describing the ordering process
+ based on compressive stress exerted by the amorphous
+ inclusions as a result of the density change upon
+ amorphisation is introduced. A Monte Carlo simulation
+ code, which focuses on high-fluence carbon
+ implantations into silicon, is able to reproduce
+ experimentally observed nanolamella distributions as
+ well as the formation of continuous amorphous layers.
+ By means of simulation, the selforganisation process
+ becomes traceable and detailed information about the
+ compositional and structural state during the ordering
+ process is obtained. Based on simulation results, a
+ recipe is proposed for producing broad distributions of
+ ordered lamellar structures.",
}
@Article{zirkelbach2006,
doi = "doi:10.1016/j.nimb.2005.08.162",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "High-dose ion implantation of materials that undergo
+ drastic density change upon amorphization at certain
+ implantation conditions results in periodically
+ arranged, self-organized, nanometric configurations of
+ the amorphous phase. A simple model explaining the
+ phenomenon is introduced and implemented in a
+ Monte-Carlo simulation code. Through simulation
+ conditions for observing lamellar precipitates are
+ specified and additional information about the
+ compositional and structural state during the ordering
+ process is gained.",
}
@Article{zirkelbach2005,
doi = "doi:10.1016/j.commatsci.2004.12.016",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Ion irradiation of materials, which undergo a drastic
+ density change upon amorphization have been shown to
+ exhibit selforganized, nanometric structures of the
+ amorphous phase in the crystalline host lattice. In
+ order to better understand the process a
+ Monte-Carlo-simulation code based on a simple model is
+ developed. In the present work we focus on high-dose
+ carbon implantations into silicon. The simulation is
+ able to reproduce results gained by cross-sectional TEM
+ measurements of high-dose carbon implanted silicon.
+ Necessary conditions can be specified for the
+ self-organization process and information is gained
+ about the compositional and structural state during the
+ ordering process which is difficult to be obtained by
+ experiment.",
}
@Article{zirkelbach09,
keywords = "Nucleation",
keywords = "Defect formation",
keywords = "Molecular dynamics simulations",
+ abstract = "The precipitation process of silicon carbide in
+ heavily carbon doped silicon is not yet fully
+ understood. High resolution transmission electron
+ microscopy observations suggest that in a first step
+ carbon atoms form C-Si dumbbells on regular Si lattice
+ sites which agglomerate into large clusters. In a
+ second step, when the cluster size reaches a radius of
+ a few nm, the high interfacial energy due to the SiC/Si
+ lattice misfit of almost 20\% is overcome and the
+ precipitation occurs. By simulation, details of the
+ precipitation process can be obtained on the atomic
+ level. A recently proposed parametrization of a
+ Tersoff-like bond order potential is used to model the
+ system appropriately. Preliminary results gained by
+ molecular dynamics simulations using this potential are
+ presented.",
}
@Article{zirkelbach10,
month = sep,
doi = "10.1103/PhysRevB.82.094110",
publisher = "American Physical Society",
-}
-
-@Article{zirkelbach11a,
- title = "First principles study of defects in carbon implanted
- silicon",
- journal = "to be published",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
- author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
- and W. G. Schmidt and E. Rauls",
-}
-
-@Article{zirkelbach11b,
- title = "...",
- journal = "to be published",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
+ abstract = "A comparative theoretical investigation of carbon
+ interstitials in silicon is presented. Calculations
+ using classical potentials are compared to
+ first-principles density-functional theory calculations
+ of the geometries, formation, and activation energies
+ of the carbon dumbbell interstitial, showing the
+ importance of a quantum-mechanical description of this
+ system. In contrast to previous studies, the present
+ first-principles calculations of the interstitial
+ carbon migration path yield an activation energy that
+ excellently matches the experiment. The bond-centered
+ interstitial configuration shows a net magnetization of
+ two electrons, illustrating the need for spin-polarized
+ calculations.",
+}
+
+@Article{zirkelbach11,
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
+ abstract = "Atomistic simulations on the silicon carbide
+ precipitation in bulk silicon employing both, classical
+ potential and first-principles methods are presented.
+ The calculations aim at a comprehensive, microscopic
+ understanding of the precipitation mechanism in the
+ context of controversial discussions in the literature.
+ For the quantum-mechanical treatment, basic processes
+ assumed in the precipitation process are calculated in
+ feasible systems of small size. The migration mechanism
+ of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
+ 1 0> self-interstitial in otherwise defect-free silicon
+ are investigated using density functional theory
+ calculations. The influence of a nearby vacancy,
+ another carbon interstitial and a substitutional defect
+ as well as a silicon self-interstitial has been
+ investigated systematically. Interactions of various
+ combinations of defects have been characterized
+ including a couple of selected migration pathways
+ within these configurations. Almost all of the
+ investigated pairs of defects tend to agglomerate
+ allowing for a reduction in strain. The formation of
+ structures involving strong carbon-carbon bonds turns
+ out to be very unlikely. In contrast, substitutional
+ carbon occurs in all probability. A long range capture
+ radius has been observed for pairs of interstitial
+ carbon as well as interstitial carbon and vacancies. A
+ rather small capture radius is predicted for
+ substitutional carbon and silicon self-interstitials.
+ Initial assumptions regarding the precipitation
+ mechanism of silicon carbide in bulk silicon are
+ established and conformability to experimental findings
+ is discussed. Furthermore, results of the accurate
+ first-principles calculations on defects and carbon
+ diffusion in silicon are compared to results of
+ classical potential simulations revealing significant
+ limitations of the latter method. An approach to work
+ around this problem is proposed. Finally, results of
+ the classical potential molecular dynamics simulations
+ of large systems are examined, which reinforce previous
+ assumptions and give further insight into basic
+ processes involved in the silicon carbide transition.",
}
@Article{lindner95,
Rauschenbach and B. Stritzker",
title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
Layers in Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "354",
number = "",
pages = "171",
year = "1994",
doi = "10.1557/PROC-354-171",
URL = "http://dx.doi.org/10.1557/PROC-354-171",
- eprint = "http://journals.cambridge.org/article_S1946427400420853",
notes = "first time ibs at moderate temperatures",
}
@Article{lindner96,
title = "Formation of buried epitaxial silicon carbide layers
in silicon by ion beam synthesis",
- journal = "Materials Chemistry and Physics",
+ journal = "Mater. Chem. Phys.",
volume = "46",
number = "2-3",
pages = "147--155",
@Article{calcagno96,
title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
ion implantation",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "120",
number = "1-4",
pages = "121--124",
@Article{lindner98,
title = "Mechanisms of Si{C} Formation in the Ion Beam
Synthesis of 3{C}-Si{C} Layers in Silicon",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "215--218",
year = "1998",
notes = "c int diffusion barrier",
}
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
growth",
- journal = "Applied Surface Science",
+ journal = "Appl. Surf. Sci.",
volume = "238",
number = "1-4",
pages = "159--164",
title = "Organometallic vapor phase epitaxial growth of Ga{N}
on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
implantation into Si(1 1 1) substrate",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "261",
number = "2-3",
pages = "266--270",
@Article{liu_l02,
title = "Substrates for gallium nitride epitaxy",
- journal = "Materials Science and Engineering: R: Reports",
+ journal = "Mater. Sci. Eng., R",
volume = "37",
number = "3",
pages = "61--127",
@Article{takeuchi91,
title = "Growth of single crystalline Ga{N} film on Si
substrate using 3{C}-Si{C} as an intermediate layer",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "115",
number = "1-4",
pages = "634--638",
doi = "10.1063/1.1730376",
}
+@Article{horsfield96,
+ title = "Bond-order potentials: Theory and implementation",
+ author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
+ D. G. Pettifor and M. Aoki",
+ journal = "Phys. Rev. B",
+ volume = "53",
+ number = "19",
+ pages = "12694--12712",
+ numpages = "18",
+ year = "1996",
+ month = may,
+ doi = "10.1103/PhysRevB.53.12694",
+ publisher = "American Physical Society",
+}
+
@Article{abell85,
- title = {Empirical chemical pseudopotential theory of molecular and metallic bonding},
- author = {Abell, G. C.},
- journal = {Phys. Rev. B},
- volume = {31},
- number = {10},
- pages = {6184--6196},
- numpages = {12},
- year = {1985},
- month = {May},
- doi = {10.1103/PhysRevB.31.6184},
- publisher = {American Physical Society}
+ title = "Empirical chemical pseudopotential theory of molecular
+ and metallic bonding",
+ author = "G. C. Abell",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "10",
+ pages = "6184--6196",
+ numpages = "12",
+ year = "1985",
+ month = may,
+ doi = "10.1103/PhysRevB.31.6184",
+ publisher = "American Physical Society",
}
@Article{tersoff_si1,
publisher = "American Physical Society",
}
+@Article{dodson87,
+ title = "Development of a many-body Tersoff-type potential for
+ silicon",
+ author = "Brian W. Dodson",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "6",
+ pages = "2795--2798",
+ numpages = "3",
+ year = "1987",
+ month = feb,
+ doi = "10.1103/PhysRevB.35.2795",
+ publisher = "American Physical Society",
+}
+
@Article{tersoff_si2,
title = "New empirical approach for the structure and energy of
covalent systems",
@Article{davis91,
author = "R. F. Davis and G. Kelner and M. Shur and J. W.
Palmour and J. A. Edmond",
- journal = "Proceedings of the IEEE",
+ journal = "Proc. IEEE",
title = "Thin film deposition and microelectronic and
optoelectronic device fabrication and characterization
in monocrystalline alpha and beta silicon carbide",
@Article{sarro00,
title = "Silicon carbide as a new {MEMS} technology",
- journal = "Sensors and Actuators A: Physical",
+ journal = "Seonsor. Actuator. A",
volume = "82",
number = "1-3",
pages = "210--218",
title = "Status of silicon carbide (Si{C}) as a wide-bandgap
semiconductor for high-temperature applications: {A}
review",
- journal = "Solid-State Electronics",
+ journal = "Solid-State Electron.",
volume = "39",
number = "10",
pages = "1409--1422",
@Article{giancarli98,
title = "Design requirements for Si{C}/Si{C} composites
structural material in fusion power reactor blankets",
- journal = "Fusion Engineering and Design",
+ journal = "Fusion Eng. Des.",
volume = "41",
number = "1-4",
pages = "165--171",
@Article{pensl93,
title = "Electrical and optical characterization of Si{C}",
- journal = "Physica B: Condensed Matter",
+ journal = "Physica B",
volume = "185",
number = "1-4",
pages = "264--283",
@Article{tairov81,
title = "General principles of growing large-size single
crystals of various silicon carbide polytypes",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 1",
pages = "146--150",
@Article{barrett91,
title = "Si{C} boule growth by sublimation vapor transport",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "109",
number = "1-4",
pages = "17--23",
@Article{barrett93,
title = "Growth of large Si{C} single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "128",
number = "1-4",
pages = "358--362",
title = "Control of polytype formation by surface energy
effects during the growth of Si{C} monocrystals by the
sublimation method",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "131",
number = "1-2",
pages = "71--74",
notes = "cvd of 3c-sic on si, sic buffer layer",
}
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
Single-Crystal Films on Si",
publisher = "ECS",
year = "1987",
- journal = "Journal of The Electrochemical Society",
+ journal = "J. Electrochem. Soc.",
volume = "134",
number = "6",
pages = "1558--1565",
off-axis Si substrates",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "11",
pages = "823--825",
@Article{ueda90,
title = "Crystal growth of Si{C} by step-controlled epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "104",
number = "3",
pages = "695--700",
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "15",
pages = "1442--1444",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "64",
number = "5",
pages = "2672--2679",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "63",
number = "8",
pages = "2645--2650",
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "59",
number = "3",
pages = "333--335",
@Article{kaneda87,
title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
properties of its p-n junction",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "81",
number = "1-4",
pages = "536--542",
level using surface superstructures",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "9",
pages = "1204--1206",
by ion implantation",
publisher = "Taylor \& Francis",
year = "1976",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "29",
number = "1",
pages = "13--15",
by high doses of 70 and 310 ke{V} carbon ions",
publisher = "Taylor \& Francis",
year = "1980",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "48",
number = "1",
pages = "7",
compounds formed in silicon by ion beam synthesis",
publisher = "Taylor \& Francis",
year = "1986",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "99",
number = "1",
pages = "71--81",
URL = "http://www.informaworld.com/10.1080/00337578608209614",
- notes = "ibs, comparison with sio and sin, higher temp or
- time, no c redistribution",
+ notes = "ibs, comparison with sio and sin, higher temp or time,
+ no c redistribution",
}
@Article{reeson87,
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "67",
number = "6",
pages = "2908--2912",
Netherlands",
title = "Boron implantations in silicon: {A} comparison of
charge carrier and boron concentration profiles",
- journal = "Applied Physics A: Materials Science \& Processing",
+ journal = "Appl. Phys. A",
publisher = "Springer Berlin / Heidelberg",
ISSN = "0947-8396",
keyword = "Physics and Astronomy",
implanted boron into silicon",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
number = "7",
pages = "416--418",
profiles",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "68",
number = "12",
pages = "6191--6198",
author = "E Kasper",
title = "Superlattices of group {IV} elements, a new
possibility to produce direct band gap material",
- journal = "Physica Scripta",
+ journal = "Phys. Scr.",
volume = "T35",
pages = "232--236",
URL = "http://stacks.iop.org/1402-4896/T35/232",
Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "24",
pages = "3033--3035",
@Article{powell93_2,
title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
of the ternary system",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "127",
number = "1-4",
pages = "425--429",
author = "H. J. Osten",
title = "Modification of Growth Modes in Lattice-Mismatched
Epitaxial Systems: Si/Ge",
- journal = "physica status solidi (a)",
+ journal = "phys. status solidi (a)",
volume = "145",
number = "2",
publisher = "WILEY-VCH Verlag",
on Si(001) by adding small amounts of carbon",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "64",
number = "25",
pages = "3440--3442",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "3",
pages = "356--358",
notes = "substitutional c in si by mbe",
}
+@Article{born27,
+ author = "M. Born and R. Oppenheimer",
+ title = "Zur Quantentheorie der Molekeln",
+ journal = "Ann. Phys. (Leipzig)",
+ volume = "389",
+ number = "20",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3889",
+ URL = "http://dx.doi.org/10.1002/andp.19273892002",
+ doi = "10.1002/andp.19273892002",
+ pages = "457--484",
+ year = "1927",
+}
+
@Article{hohenberg64,
title = "Inhomogeneous Electron Gas",
author = "P. Hohenberg and W. Kohn",
notes = "density functional theory, dft",
}
+@Article{thomas27,
+ title = "The calculation of atomic fields",
+ author = "L. H. Thomas",
+ journal = "Proc. Cambridge Philos. Soc.",
+ volume = "23",
+ pages = "542--548",
+ year = "1927",
+ doi = "10.1017/S0305004100011683",
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+
+@Article{fermi27,
+ title = "",
+ author = "E. Fermi",
+ journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
+ Rend.",
+ volume = "6",
+ pages = "602",
+ year = "1927",
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+
+@Article{hartree28,
+ title = "The Wave Mechanics of an Atom with a Non-Coulomb
+ Central Field. Part {I}. Theory and Methods",
+ author = "D. R. Hartree",
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+ year = "1928",
+ doi = "10.1017/S0305004100011919",
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+
+@Article{slater29,
+ title = "The Theory of Complex Spectra",
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+ number = "10",
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+ month = nov,
+ doi = "10.1103/PhysRev.34.1293",
+ publisher = "American Physical Society",
+}
+
@Article{kohn65,
title = "Self-Consistent Equations Including Exchange and
Correlation Effects",
notes = "dft, exchange and correlation",
}
+@Article{kohn96,
+ title = "Density Functional and Density Matrix Method Scaling
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+ author = "W. Kohn",
+ journal = "Phys. Rev. Lett.",
+ volume = "76",
+ number = "17",
+ pages = "3168--3171",
+ numpages = "3",
+ year = "1996",
+ month = apr,
+ doi = "10.1103/PhysRevLett.76.3168",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn98,
+ title = "Edge Electron Gas",
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+ journal = "Phys. Rev. Lett.",
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+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevLett.81.3487",
+ publisher = "American Physical Society",
+}
+
+@Article{kohn99,
+ title = "Nobel Lecture: Electronic structure of matter---wave
+ functions and density functionals",
+ author = "W. Kohn",
+ journal = "Rev. Mod. Phys.",
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+ pages = "1253--1266",
+ numpages = "13",
+ year = "1999",
+ month = oct,
+ doi = "10.1103/RevModPhys.71.1253",
+ publisher = "American Physical Society",
+}
+
+@Article{payne92,
+ title = "Iterative minimization techniques for ab initio
+ total-energy calculations: molecular dynamics and
+ conjugate gradients",
+ author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
+ Arias and J. D. Joannopoulos",
+ journal = "Rev. Mod. Phys.",
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+ numpages = "52",
+ year = "1992",
+ month = oct,
+ doi = "10.1103/RevModPhys.64.1045",
+ publisher = "American Physical Society",
+}
+
+@Article{levy82,
+ title = "Electron densities in search of Hamiltonians",
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+ volume = "26",
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+ numpages = "8",
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+ month = sep,
+ doi = "10.1103/PhysRevA.26.1200",
+ publisher = "American Physical Society",
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+
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author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
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- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "41",
number = "Part 1, No. 4B",
pages = "2472--2475",
y] layers on Si(001)",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "26",
pages = "3356--3358",
y]{C}[sub y] on Si(001)",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "80",
number = "12",
pages = "6711--6715",
}
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- title = "{PARCAS} molecular dynamics code",
+ journal = "{PARCAS} molecular dynamics code",
author = "K. Nordlund",
year = "2008",
}
@Article{chaussende07,
author = "D. Chaussende and P. J. Wellmann and M. Pons",
title = "Status of Si{C} bulk growth processes",
- journal = "Journal of Physics D: Applied Physics",
+ journal = "J. Phys. D",
volume = "40",
number = "20",
pages = "6150",
Heteroepitaxial Growth",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "405--420",
URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
@Article{hornstra58,
title = "Dislocations in the diamond lattice",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "5",
number = "1-2",
pages = "129--141",
notes = "paw method",
}
+@InCollection{cohen70,
+ title = "The Fitting of Pseudopotentials to Experimental Data
+ and Their Subsequent Application",
+ editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
+ publisher = "Academic Press",
+ year = "1970",
+ volume = "24",
+ pages = "37--248",
+ series = "Solid State Physics",
+ ISSN = "0081-1947",
+ doi = "DOI: 10.1016/S0081-1947(08)60070-3",
+ URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
+ author = "Marvin L. Cohen and Volker Heine",
+}
+
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title = "Norm-Conserving Pseudopotentials",
author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
notes = "norm-conserving pseudopotentials",
}
+@Article{kleinman82,
+ journal = "Phys. Rev. Lett.",
+ month = may,
+ doi = "10.1103/PhysRevLett.48.1425",
+ issue = "20",
+ author = "Leonard Kleinman and D. M. Bylander",
+ title = "Efficacious Form for Model Pseudopotentials",
+ year = "1982",
+ URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425",
+ publisher = "American Physical Society",
+ pages = "1425--1428",
+ volume = "48",
+}
+
+@Article{troullier91,
+ title = "Efficient pseudopotentials for plane-wave
+ calculations",
+ author = "N. Troullier and Jos\'e Luriaas Martins",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "3",
+ pages = "1993--2006",
+ numpages = "13",
+ year = "1991",
+ month = jan,
+ doi = "10.1103/PhysRevB.43.1993",
+ publisher = "American Physical Society",
+}
+
@Article{vanderbilt90,
title = "Soft self-consistent pseudopotentials in a generalized
eigenvalue formalism",
notes = "vasp pseudopotentials",
}
+@Article{ceperley80,
+ title = "Ground State of the Electron Gas by a Stochastic
+ Method",
+ author = "D. M. Ceperley and B. J. Alder",
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+ doi = "10.1103/PhysRevLett.45.566",
+ publisher = "American Physical Society",
+}
+
+@Article{perdew81,
+ title = "Self-interaction correction to density-functional
+ approximations for many-electron systems",
+ author = "J. P. Perdew and Alex Zunger",
+ journal = "Phys. Rev. B",
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+ number = "10",
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+ numpages = "31",
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+ month = may,
+ doi = "10.1103/PhysRevB.23.5048",
+ publisher = "American Physical Society",
+}
+
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title = "Accurate and simple density functional for the
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title = "Generalized gradient approximations for exchange and
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- journal = "Physica B: Condensed Matter",
+ journal = "Physica B",
volume = "172",
number = "1-2",
pages = "1--6",
notes = "gga pw91 (as in vasp)",
}
+@Article{chadi73,
+ title = "Special Points in the Brillouin Zone",
+ author = "D. J. Chadi and Marvin L. Cohen",
+ journal = "Phys. Rev. B",
+ volume = "8",
+ number = "12",
+ pages = "5747--5753",
+ numpages = "6",
+ year = "1973",
+ month = dec,
+ doi = "10.1103/PhysRevB.8.5747",
+ publisher = "American Physical Society",
+}
+
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title = "Mean-Value Point in the Brillouin Zone",
author = "A. Baldereschi",
notes = "mean value k point",
}
+@Article{monkhorst76,
+ title = "Special points for Brillouin-zone integrations",
+ author = "Hendrik J. Monkhorst and James D. Pack",
+ journal = "Phys. Rev. B",
+ volume = "13",
+ number = "12",
+ pages = "5188--5192",
+ numpages = "4",
+ year = "1976",
+ month = jun,
+ doi = "10.1103/PhysRevB.13.5188",
+ publisher = "American Physical Society",
+}
+
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
si",
}
+@Article{jones89,
+ doi = "10.1103/RevModPhys.61.689",
+ month = jul,
+ issue = "3",
+ author = "R. O. Jones and O. Gunnarsson",
+ year = "1989",
+ URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689",
+ publisher = "American Physical Society",
+ title = "The density functional formalism, its applications and
+ prospects",
+ pages = "689--746",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ notes = "dft intro",
+}
+
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@Article{losev28,
title = "Luminous carborundum detector and detection effect and
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- journal = "Philosophical Magazine Series 7",
+ journal = "Philos. Mag. Series 7",
volume = "6",
number = "39",
pages = "1024--1044",
title = "Growth and Properties of beta-Si{C} Single Crystals",
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- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "37",
number = "1",
pages = "333--336",
title = "Electronic Conduction in Silicon Carbide",
publisher = "AIP",
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+ journal = "J. Chem. Phys.",
volume = "21",
number = "5",
pages = "821--827",
improved external quantum efficiency",
publisher = "AIP",
year = "1982",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "53",
number = "10",
pages = "6962--6967",
Road 44135 Cleveland OH",
title = "Progress in silicon carbide semiconductor electronics
technology",
- journal = "Journal of Electronic Materials",
+ journal = "J. Electron. Mater.",
publisher = "Springer Boston",
ISSN = "0361-5235",
keyword = "Chemistry and Materials Science",
notes = "sic data, advantages of 3c sic",
}
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "2002 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "2001 IEEE MTT-S International Microwave Symposium
+ Digest",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Proc.",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+}
+
@Article{bhatnagar93,
author = "M. Bhatnagar and B. J. Baliga",
- journal = "Electron Devices, IEEE Transactions on",
+ journal = "IEEE Trans. Electron Devices",
title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
devices",
year = "1993",
notes = "comparison 3c 6h sic and si devices",
}
+@Article{ryu01,
+ author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W.
+ Palmour",
+ journal = "IEEE Electron Device Lett.",
+ title = "1800 {V} {NPN} bipolar junction transistors in
+ 4{H}-Si{C}",
+ year = "2001",
+ month = mar,
+ volume = "22",
+ number = "3",
+ pages = "124--126",
+ keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction
+ transistor;SiC;blocking voltage;current gain;deep level
+ acceptor;minority carrier lifetime;on-resistance;power
+ switching device;temperature coefficient;carrier
+ lifetime;deep levels;minority carriers;power bipolar
+ transistors;silicon compounds;wide band gap
+ semiconductors;",
+ doi = "10.1109/55.910617",
+ ISSN = "0741-3106",
+}
+
+@Article{baliga96,
+ author = "B. J. Baliga",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Trends in power semiconductor devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1717--1731",
+ keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated
+ devices;MOS-gated thyristors;MPS rectifier;PIN
+ rectifier;Schottky rectifier;Si;SiC;SiC based
+ switches;TMBS rectifier;UMOS technology;VMOS
+ technology;bipolar power transistor;high voltage power
+ rectifiers;low voltage power rectifiers;power
+ MOSFET;power losses;power semiconductor devices;power
+ switch technology;review;semiconductor device
+ technology;MOS-controlled thyristors;bipolar transistor
+ switches;field effect transistor switches;gallium
+ arsenide;insulated gate bipolar transistors;p-i-n
+ diodes;power bipolar transistors;power field effect
+ transistors;power semiconductor devices;power
+ semiconductor diodes;power semiconductor
+ switches;reviews;silicon;silicon compounds;solid-state
+ rectifiers;thyristors;",
+ doi = "10.1109/16.536818",
+ ISSN = "0018-9383",
+}
+
+@Article{bhatnagar92,
+ author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga",
+ journal = "IEEE Electron Device Lett.",
+ title = "Silicon-carbide high-voltage (400 {V}) Schottky
+ barrier diodes",
+ year = "1992",
+ month = oct,
+ volume = "13",
+ number = "10",
+ pages = "501--503",
+ keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier
+ diodes;breakdown
+ voltages;characteristics;fabrication;forward I-V
+ characteristics;forward voltage drop;on-state current
+ density;rectifiers;reverse I-V characteristics;reverse
+ recovery characteristics;sharp breakdown;temperature
+ range;Schottky-barrier diodes;platinum;power
+ electronics;semiconductor materials;silicon
+ compounds;solid-state rectifiers;",
+ doi = "10.1109/55.192814",
+ ISSN = "0741-3106",
+}
+
@Article{neudeck94,
author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
A. Powell and C. S. Salupo and L. G. Matus",
- journal = "Electron Devices, IEEE Transactions on",
+ journal = "IEEE Trans. Electron Devices",
title = "Electrical properties of epitaxial 3{C}- and
6{H}-Si{C} p-n junction diodes produced side-by-side on
6{H}-Si{C} substrates",
substrate",
}
+@Article{weitzel96,
+ author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
+ and K. Moore and K. K. Nordquist and S. Allen and C.
+ Thero and M. Bhatnagar",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide high-power devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1732--1741",
+ keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
+ barrier diodes;SiC;SiC devices;UMOSFET;current
+ density;high electric breakdown field;high saturated
+ electron drift velocity;high thermal
+ conductivity;high-power devices;packaged SIT;submicron
+ gate length MESFET;Schottky diodes;current
+ density;electric breakdown;power MESFET;power
+ MOSFET;power semiconductor devices;power semiconductor
+ diodes;reviews;silicon compounds;static induction
+ transistors;wide band gap semiconductors;",
+ doi = "10.1109/16.536819",
+ ISSN = "0018-9383",
+ notes = "high power devices",
+}
+
+@Article{zhu08,
+ author = "Lin Zhu and T. P. Chow",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
+ year = "2008",
+ month = aug,
+ volume = "55",
+ number = "8",
+ pages = "1871--1874",
+ keywords = "H-SiC;OFF-state characteristics;ON-state
+ characteristics;blocking capability;high-voltage
+ Schottky rectifier;junction barrier Schottky
+ rectifier;lateral channel JBS rectifier;leakage
+ current;pinlike reverse characteristics;Schottky
+ barriers;Schottky diodes;leakage currents;rectifying
+ circuits;",
+ doi = "10.1109/TED.2008.926642",
+ ISSN = "0018-9383",
+}
+
+@Article{brown93,
+ author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
+ Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
+ and G. Gati and J. M. Pimbley and W. E. Schneider",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide {UV} photodiodes",
+ year = "1993",
+ month = feb,
+ volume = "40",
+ number = "2",
+ pages = "325--333",
+ keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
+ responsivity characteristics;low dark current;low light
+ level UV detection;quantum
+ efficiency;reproducibility;reverse current
+ leakage;short circuit output current;leakage
+ currents;photodiodes;semiconductor
+ materials;short-circuit currents;silicon
+ compounds;ultraviolet detectors;",
+ doi = "10.1109/16.182509",
+ ISSN = "0018-9383",
+ notes = "sic photo diodes, uv detector",
+}
+
+@Article{yan04,
+ author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
+ and D. Franz and J. H. Zhao and M. Weiner",
+ journal = "IEEE J. Quantum Electron.",
+ title = "4{H}-Si{C} {UV} photo detectors with large area and
+ very high specific detectivity",
+ year = "2004",
+ month = sep,
+ volume = "40",
+ number = "9",
+ pages = "1315--1320",
+ keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
+ photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
+ SiC-Pt; leakage current; photoresponse spectra; quantum
+ efficiency; specific detectivity; Schottky diodes;
+ photodetectors; platinum; silicon compounds; wide band
+ gap semiconductors;",
+ doi = "10.1109/JQE.2004.833196",
+ ISSN = "0018-9197",
+ notes = "uv detector",
+}
+
@Article{schulze98,
author = "N. Schulze and D. L. Barrett and G. Pensl",
collaboration = "",
single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "72",
number = "13",
pages = "1632--1634",
notes = "micropipe free 6h-sic pvt growth",
}
+@Article{frank51,
+ author = "F. C. Frank",
+ title = "Capillary equilibria of dislocated crystals",
+ journal = "Acta Crystallogr.",
+ year = "1951",
+ volume = "4",
+ number = "6",
+ pages = "497--501",
+ month = nov,
+ doi = "10.1107/S0365110X51001690",
+ URL = "http://dx.doi.org/10.1107/S0365110X51001690",
+ notes = "micropipe",
+}
+
+@Article{heindl97,
+ author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G.
+ Pensl",
+ title = "Micropipes: Hollow Tubes in Silicon Carbide",
+ journal = "phys. status solidi (a)",
+ volume = "162",
+ number = "1",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-396X",
+ URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
+ pages = "251--262",
+ year = "1997",
+ notes = "micropipe",
+}
+
+@Article{neudeck94_2,
+ author = "P. G. Neudeck and J. A. Powell",
+ journal = "IEEE Electron Device Lett.",
+ title = "Performance limiting micropipe defects in silicon
+ carbide wafers",
+ year = "1994",
+ month = feb,
+ volume = "15",
+ number = "2",
+ pages = "63--65",
+ keywords = "SiC;defect density;device ratings;epitaxially-grown pn
+ junction devices;micropipe defects;power devices;power
+ semiconductors;pre-avalanche reverse-bias point
+ failures;p-n homojunctions;power
+ electronics;semiconductor materials;silicon
+ compounds;",
+ doi = "10.1109/55.285372",
+ ISSN = "0741-3106",
+}
+
@Article{pirouz87,
author = "P. Pirouz and C. M. Chorey and J. A. Powell",
collaboration = "",
title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
number = "4",
pages = "221--223",
@Article{shibahara86,
title = "Surface morphology of cubic Si{C}(100) grown on
Si(100) by chemical vapor deposition",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "78",
number = "3",
pages = "538--544",
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "79",
number = "3",
pages = "1423--1434",
carbonization of silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "3",
pages = "2070--2073",
@Article{fuyuki89,
title = "Atomic layer epitaxy of cubic Si{C} by gas source
{MBE} using surface superstructure",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "95",
number = "1-4",
pages = "461--463",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "7",
pages = "824--826",
@Article{yoshinobu90,
title = "Atomic level control in gas source {MBE} growth of
cubic Si{C}",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "99",
number = "1-4",
pages = "520--524",
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "22",
pages = "2851--2853",
3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "359--378",
notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
@Article{takaoka98,
title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "183",
number = "1-2",
pages = "175--182",
title = "Low-temperature heteroepitaxial growth of cubic Si{C}
on Si using hydrocarbon radicals by gas source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "150",
number = "Part 2",
pages = "934--938",
author = "Volker Heine and Ching Cheng and Richard J. Needs",
title = "The Preference of Silicon Carbide for Growth in the
Metastable Cubic Form",
- journal = "Journal of the American Ceramic Society",
+ journal = "J. Am. Ceram. Soc.",
volume = "74",
number = "10",
publisher = "Blackwell Publishing Ltd",
@Article{allendorf91,
title = "The adsorption of {H}-atoms on polycrystalline
[beta]-silicon carbide",
- journal = "Surface Science",
+ journal = "Surf. Sci.",
volume = "258",
number = "1-3",
pages = "177--189",
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "11",
pages = "6615--6618",
@Article{newman85,
author = "Ronald C. Newman",
title = "Carbon in Crystalline Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "403",
@Article{newman61,
title = "The diffusivity of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "19",
number = "3-4",
pages = "230--234",
@Article{goesele85,
author = "U. Gösele",
title = "The Role of Carbon and Point Defects in Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "419",
title = "Defects in Carbon-Implanted Silicon",
author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
Fukuoka and Haruo Saito",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "21",
number = "Part 1, No. 2",
pages = "399--400",
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "77",
number = "7",
pages = "2978--2984",
keywords = "Ion implantation",
notes = "incoherent 3c-sic precipitate",
}
+
+@Article{davidson75,
+ title = "The iterative calculation of a few of the lowest
+ eigenvalues and corresponding eigenvectors of large
+ real-symmetric matrices",
+ journal = "J. Comput. Phys.",
+ volume = "17",
+ number = "1",
+ pages = "87--94",
+ year = "1975",
+ note = "",
+ ISSN = "0021-9991",
+ doi = "DOI: 10.1016/0021-9991(75)90065-0",
+ URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
+ author = "Ernest R. Davidson",
+}
+
+@Book{adorno_mm,
+ title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
+ Leben",
+ author = "T. W. Adorno",
+ ISBN = "978-3-518-01236-9",
+ URL = "http://books.google.com/books?id=coZqRAAACAAJ",
+ year = "1994",
+ publisher = "Suhrkamp",
+}
+
+@Misc{attenberger03,
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}
+
+@Article{zunger01,
+ author = "Alex Zunger",
+ title = "Pseudopotential Theory of Semiconductor Quantum Dots",
+ journal = "physica status solidi (b)",
+ volume = "224",
+ number = "3",
+ publisher = "WILEY-VCH Verlag Berlin GmbH",
+ ISSN = "1521-3951",
+ URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
+ pages = "727--734",
+ keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11,
+ S8.12",
+ year = "2001",
+ notes = "configuration-interaction method, ci",
+}
+
+@Article{robertson90,
+ author = "I. J. Robertson and M. C. Payne",
+ title = "k-point sampling and the k.p method in pseudopotential
+ total energy calculations",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "2",
+ number = "49",
+ pages = "9837",
+ URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010",
+ year = "1990",
+ notes = "kp method",
+}
+
+@Article{lange11,
+ volume = "84",
+ journal = "Phys. Rev. B",
+ author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg
+ Neugebauer",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101",
+ doi = "10.1103/PhysRevB.84.085101",
+ year = "2011",
+ title = "Construction and performance of fully numerical
+ optimum atomic basis sets",
+ issue = "8",
+ publisher = "American Physical Society",
+ numpages = "11",
+ pages = "085101",
+ notes = "quamol, basis set, for planc",
+}
+
projects / lectures / latex.git / blobdiff