started initial part of prec models

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 076bf0e..c7019b9 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -118,6 +118,7 @@
   pages =        "827--835",
   month =        mar,
   year =         "2003",
+  URL =          "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
   notes =        "dual implantation, sic prec enhanced by vacancies,
                  precipitation by interstitial and substitutional
                  carbon, both mechanisms explained + refs",
@@ -4554,6 +4555,21 @@
   eprint =       "http://journals.cambridge.org/article_S1946427400543681",
 }
 
+@Article{mukashev82,
+  title =        "Defects in Carbon-Implanted Silicon",
+  author =       "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
+                 Fukuoka and Haruo Saito",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "21",
+  number =       "Part 1, No. 2",
+  pages =        "399--400",
+  numpages =     "1",
+  year =         "1982",
+  URL =          "http://jjap.jsap.jp/link?JJAP/21/399/",
+  doi =          "10.1143/JJAP.21.399",
+  publisher =    "The Japan Society of Applied Physics",
+}
+
 @Article{puska98,
   title =        "Convergence of supercell calculations for point
                  defects in semiconductors: Vacancy in silicon",
@@ -4592,3 +4608,26 @@
   URL =          "http://link.aip.org/link/?JAP/77/2978/1",
   doi =          "10.1063/1.358714",
 }
+
+@Article{romano-rodriguez96,
+  title =        "Detailed analysis of [beta]-Si{C} formation by high
+                 dose carbon ion implantation in silicon",
+  journal =      "Materials Science and Engineering B",
+  volume =       "36",
+  number =       "1-3",
+  pages =        "282--285",
+  year =         "1996",
+  note =         "European Materials Research Society 1995 Spring
+                 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
+                 Oxygen in Silicon and in Other Elemental
+                 Semiconductors",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/0921-5107(95)01283-4",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
+  author =       "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
+                 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
+                 and W. Skorupa",
+  keywords =     "Silicon",
+  keywords =     "Ion implantation",
+  notes =        "incoherent 3c-sic precipitate",
+}