year = "1926",
}
+@Article{bloch29,
+ author = "Felix Bloch",
+ affiliation = "Institut d. Universität f. theor. Physik Leipzig",
+ title = "Über die Quantenmechanik der Elektronen in
+ Kristallgittern",
+ journal = "Zeitschrift für Physik A Hadrons and Nuclei",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0939-7922",
+ keyword = "Physics and Astronomy",
+ pages = "555--600",
+ volume = "52",
+ issue = "7",
+ URL = "http://dx.doi.org/10.1007/BF01339455",
+ note = "10.1007/BF01339455",
+ year = "1929",
+}
+
@Article{albe_sic_pot,
author = "Paul Erhart and Karsten Albe",
title = "Analytical potential for atomistic simulations of
@Article{newman65,
title = "Vibrational absorption of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "26",
number = "2",
pages = "373--379",
title = "Effect of Carbon on the Lattice Parameter of Silicon",
publisher = "AIP",
year = "1968",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "39",
number = "9",
pages = "4365--4368",
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "32",
number = "6",
pages = "1211--1219",
silicon, si self interstitials, free energy",
}
+@Article{mattsson08,
+ title = "Electronic surface error in the Si interstitial
+ formation energy",
+ author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
+ Armiento",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "15",
+ pages = "155211",
+ numpages = "7",
+ year = "2008",
+ month = apr,
+ doi = "10.1103/PhysRevB.77.155211",
+ publisher = "American Physical Society",
+ notes = "si self interstitial formation energies by dft",
+}
+
@Article{goedecker02,
title = "A Fourfold Coordinated Point Defect in Silicon",
author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
silicon",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "6",
pages = "3815--3820",
@Article{foell77,
title = "The formation of swirl defects in silicon by
agglomeration of self-interstitials",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "40",
number = "1",
pages = "90--108",
@Article{foell81,
title = "Microdefects in silicon and their relation to point
defects",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 2",
pages = "907--916",
@InProceedings{werner96,
author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
Eichler",
- booktitle = "Ion Implantation Technology. Proceedings of the 11th
- International Conference on",
+ booktitle = "Proceedings of the 11th International Conference on
+ Ion Implantation Technology.",
title = "{TEM} investigation of {C}-Si defects in carbon
implanted silicon",
year = "1996",
silicon",
publisher = "AIP",
year = "1984",
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+ journal = "Appl. Phys. Lett.",
volume = "45",
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Ge[sup + ] and {C}[sup + ] implantation",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "57",
number = "22",
pages = "2345--2347",
title = "Metastable SiGe{C} formation by solid phase epitaxy",
publisher = "AIP",
year = "1993",
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+ journal = "Appl. Phys. Lett.",
volume = "63",
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pages = "2786--2788",
strained layer superlattices",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "22",
pages = "2758--2760",
title = "Organometallic vapor phase epitaxial growth of Ga{N}
on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
implantation into Si(1 1 1) substrate",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "261",
number = "2-3",
pages = "266--270",
@Article{takeuchi91,
title = "Growth of single crystalline Ga{N} film on Si
substrate using 3{C}-Si{C} as an intermediate layer",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "115",
number = "1-4",
pages = "634--638",
@Article{tairov81,
title = "General principles of growing large-size single
crystals of various silicon carbide polytypes",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 1",
pages = "146--150",
@Article{barrett91,
title = "Si{C} boule growth by sublimation vapor transport",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "109",
number = "1-4",
pages = "17--23",
@Article{barrett93,
title = "Growth of large Si{C} single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "128",
number = "1-4",
pages = "358--362",
title = "Control of polytype formation by surface energy
effects during the growth of Si{C} monocrystals by the
sublimation method",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "131",
number = "1-2",
pages = "71--74",
Single-Crystal Films on Si",
publisher = "ECS",
year = "1987",
- journal = "Journal of The Electrochemical Society",
+ journal = "J. Electrochem. Soc.",
volume = "134",
number = "6",
pages = "1558--1565",
off-axis Si substrates",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "11",
pages = "823--825",
@Article{ueda90,
title = "Crystal growth of Si{C} by step-controlled epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "104",
number = "3",
pages = "695--700",
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "15",
pages = "1442--1444",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "64",
number = "5",
pages = "2672--2679",
substrates",
publisher = "AIP",
year = "1988",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "63",
number = "8",
pages = "2645--2650",
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "59",
number = "3",
pages = "333--335",
@Article{kaneda87,
title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
properties of its p-n junction",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "81",
number = "1-4",
pages = "536--542",
level using surface superstructures",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "9",
pages = "1204--1206",
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "67",
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pages = "2908--2912",
implanted boron into silicon",
publisher = "AIP",
year = "1987",
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volume = "50",
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profiles",
publisher = "AIP",
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pages = "6191--6198",
Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
publisher = "AIP",
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- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
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@Article{powell93_2,
title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
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+ journal = "J. Cryst. Growth",
volume = "127",
number = "1-4",
pages = "425--429",
author = "H. J. Osten",
title = "Modification of Growth Modes in Lattice-Mismatched
Epitaxial Systems: Si/Ge",
- journal = "physica status solidi (a)",
+ journal = "phys. status solidi (a)",
volume = "145",
number = "2",
publisher = "WILEY-VCH Verlag",
on Si(001) by adding small amounts of carbon",
publisher = "AIP",
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- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
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molecular beam epitaxy",
publisher = "AIP",
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- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "3",
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@Article{fermi27,
title = "",
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+ Rend.",
volume = "6",
pages = "602",
year = "1927",
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}
+@Article{slater29,
+ title = "The Theory of Complex Spectra",
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+ volume = "34",
+ number = "10",
+ pages = "1293--1322",
+ numpages = "29",
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+ month = nov,
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+ publisher = "American Physical Society",
+}
+
@Article{kohn65,
title = "Self-Consistent Equations Including Exchange and
Correlation Effects",
notes = "dft, exchange and correlation",
}
+@Article{kohn96,
+ title = "Density Functional and Density Matrix Method Scaling
+ Linearly with the Number of Atoms",
+ author = "W. Kohn",
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+ numpages = "3",
+ year = "1996",
+ month = apr,
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+ publisher = "American Physical Society",
+}
+
+@Article{kohn98,
+ title = "Edge Electron Gas",
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+ publisher = "American Physical Society",
+}
+
@Article{kohn99,
title = "Nobel Lecture: Electronic structure of matter---wave
functions and density functionals",
publisher = "American Physical Society",
}
+@Article{payne92,
+ title = "Iterative minimization techniques for ab initio
+ total-energy calculations: molecular dynamics and
+ conjugate gradients",
+ author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
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+ numpages = "52",
+ year = "1992",
+ month = oct,
+ doi = "10.1103/RevModPhys.64.1045",
+ publisher = "American Physical Society",
+}
+
+@Article{levy82,
+ title = "Electron densities in search of Hamiltonians",
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+ volume = "26",
+ number = "3",
+ pages = "1200--1208",
+ numpages = "8",
+ year = "1982",
+ month = sep,
+ doi = "10.1103/PhysRevA.26.1200",
+ publisher = "American Physical Society",
+}
+
@Article{ruecker94,
title = "Strain-stabilized highly concentrated pseudomorphic
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by Low-Temperature Chemical Vapor Deposition",
author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "41",
number = "Part 1, No. 4B",
pages = "2472--2475",
y] layers on Si(001)",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "65",
number = "26",
pages = "3356--3358",
y]{C}[sub y] on Si(001)",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "80",
number = "12",
pages = "6711--6715",
@Article{chaussende07,
author = "D. Chaussende and P. J. Wellmann and M. Pons",
title = "Status of Si{C} bulk growth processes",
- journal = "Journal of Physics D: Applied Physics",
+ journal = "J. Phys. D",
volume = "40",
number = "20",
pages = "6150",
Heteroepitaxial Growth",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "405--420",
URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
@Article{hornstra58,
title = "Dislocations in the diamond lattice",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "5",
number = "1-2",
pages = "129--141",
notes = "paw method",
}
+@InCollection{cohen70,
+ title = "The Fitting of Pseudopotentials to Experimental Data
+ and Their Subsequent Application",
+ editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
+ booktitle = "",
+ publisher = "Academic Press",
+ year = "1970",
+ volume = "24",
+ pages = "37--248",
+ series = "Solid State Physics",
+ ISSN = "0081-1947",
+ doi = "DOI: 10.1016/S0081-1947(08)60070-3",
+ URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
+ author = "Marvin L. Cohen and Volker Heine",
+}
+
@Article{hamann79,
title = "Norm-Conserving Pseudopotentials",
author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
notes = "norm-conserving pseudopotentials",
}
+@Article{troullier91,
+ title = "Efficient pseudopotentials for plane-wave
+ calculations",
+ author = "N. Troullier and Jos\'e Luriaas Martins",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "3",
+ pages = "1993--2006",
+ numpages = "13",
+ year = "1991",
+ month = jan,
+ doi = "10.1103/PhysRevB.43.1993",
+ publisher = "American Physical Society",
+}
+
@Article{vanderbilt90,
title = "Soft self-consistent pseudopotentials in a generalized
eigenvalue formalism",
notes = "vasp pseudopotentials",
}
+@Article{ceperley80,
+ title = "Ground State of the Electron Gas by a Stochastic
+ Method",
+ author = "D. M. Ceperley and B. J. Alder",
+ journal = "Phys. Rev. Lett.",
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+ number = "7",
+ pages = "566--569",
+ numpages = "3",
+ year = "1980",
+ month = aug,
+ doi = "10.1103/PhysRevLett.45.566",
+ publisher = "American Physical Society",
+}
+
+@Article{perdew81,
+ title = "Self-interaction correction to density-functional
+ approximations for many-electron systems",
+ author = "J. P. Perdew and Alex Zunger",
+ journal = "Phys. Rev. B",
+ volume = "23",
+ number = "10",
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+ numpages = "31",
+ year = "1981",
+ month = may,
+ doi = "10.1103/PhysRevB.23.5048",
+ publisher = "American Physical Society",
+}
+
@Article{perdew86,
title = "Accurate and simple density functional for the
electronic exchange energy: Generalized gradient
notes = "gga pw91 (as in vasp)",
}
+@Article{chadi73,
+ title = "Special Points in the Brillouin Zone",
+ author = "D. J. Chadi and Marvin L. Cohen",
+ journal = "Phys. Rev. B",
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+ number = "12",
+ pages = "5747--5753",
+ numpages = "6",
+ year = "1973",
+ month = dec,
+ doi = "10.1103/PhysRevB.8.5747",
+ publisher = "American Physical Society",
+}
+
@Article{baldereschi73,
title = "Mean-Value Point in the Brillouin Zone",
author = "A. Baldereschi",
notes = "mean value k point",
}
+@Article{monkhorst76,
+ title = "Special points for Brillouin-zone integrations",
+ author = "Hendrik J. Monkhorst and James D. Pack",
+ journal = "Phys. Rev. B",
+ volume = "13",
+ number = "12",
+ pages = "5188--5192",
+ numpages = "4",
+ year = "1976",
+ month = jun,
+ doi = "10.1103/PhysRevB.13.5188",
+ publisher = "American Physical Society",
+}
+
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
title = "Growth and Properties of beta-Si{C} Single Crystals",
publisher = "AIP",
year = "1966",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "37",
number = "1",
pages = "333--336",
title = "Electronic Conduction in Silicon Carbide",
publisher = "AIP",
year = "1953",
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+ journal = "J. Chem. Phys.",
volume = "21",
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improved external quantum efficiency",
publisher = "AIP",
year = "1982",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "53",
number = "10",
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single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
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+ journal = "Appl. Phys. Lett.",
volume = "72",
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title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "50",
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@Article{shibahara86,
title = "Surface morphology of cubic Si{C}(100) grown on
Si(100) by chemical vapor deposition",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "78",
number = "3",
pages = "538--544",
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "79",
number = "3",
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carbonization of silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "3",
pages = "2070--2073",
@Article{fuyuki89,
title = "Atomic layer epitaxy of cubic Si{C} by gas source
{MBE} using surface superstructure",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "95",
number = "1-4",
pages = "461--463",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "60",
number = "7",
pages = "824--826",
@Article{yoshinobu90,
title = "Atomic level control in gas source {MBE} growth of
cubic Si{C}",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "99",
number = "1-4",
pages = "520--524",
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
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number = "22",
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3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "359--378",
notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
@Article{takaoka98,
title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "183",
number = "1-2",
pages = "175--182",
title = "Low-temperature heteroepitaxial growth of cubic Si{C}
on Si using hydrocarbon radicals by gas source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "150",
number = "Part 2",
pages = "934--938",
author = "Volker Heine and Ching Cheng and Richard J. Needs",
title = "The Preference of Silicon Carbide for Growth in the
Metastable Cubic Form",
- journal = "Journal of the American Ceramic Society",
+ journal = "J. Am. Ceram. Soc.",
volume = "74",
number = "10",
publisher = "Blackwell Publishing Ltd",
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "11",
pages = "6615--6618",
@Article{newman61,
title = "The diffusivity of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "19",
number = "3-4",
pages = "230--234",
title = "Defects in Carbon-Implanted Silicon",
author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
Fukuoka and Haruo Saito",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "21",
number = "Part 1, No. 2",
pages = "399--400",
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "77",
number = "7",
pages = "2978--2984",
keywords = "Ion implantation",
notes = "incoherent 3c-sic precipitate",
}
+
+@Article{davidson75,
+ title = "The iterative calculation of a few of the lowest
+ eigenvalues and corresponding eigenvectors of large
+ real-symmetric matrices",
+ journal = "J. Comput. Phys.",
+ volume = "17",
+ number = "1",
+ pages = "87--94",
+ year = "1975",
+ note = "",
+ ISSN = "0021-9991",
+ doi = "DOI: 10.1016/0021-9991(75)90065-0",
+ URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
+ author = "Ernest R. Davidson",
+}
+
+@Book{adorno_mm,
+ title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
+ Leben",
+ author = "T. W. Adorno",
+ ISBN = "978-3-518-01236-9",
+ URL = "http://books.google.com/books?id=coZqRAAACAAJ",
+ year = "1994",
+ publisher = "Suhrkamp",
+}
projects / lectures / latex.git / blobdiff