finished spe of strained si, only osten remaining

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index a4eb408..ebcc267 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -982,6 +982,26 @@
                  silicon",
 }
 
+@Article{isomae93,
+  author =       "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
+                 Masao Tamura",
+  collaboration = "",
+  title =        "Annealing behavior of Me{V} implanted carbon in
+                 silicon",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Journal of Applied Physics",
+  volume =       "74",
+  number =       "6",
+  pages =        "3815--3820",
+  keywords =     "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
+                 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
+                 PROFILES",
+  URL =          "http://link.aip.org/link/?JAP/74/3815/1",
+  doi =          "10.1063/1.354474",
+  notes =        "c at interstitial location for rt implantation in si",
+}
+
 @Article{strane96,
   title =        "Carbon incorporation into Si at high concentrations by
                  ion implantation and solid phase epitaxy",
@@ -1122,6 +1142,26 @@
   notes =        "c diffusion due to si self-interstitials",
 }
 
+@Article{strane93,
+  author =       "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
+                 Doyle and S. T. Picraux and J. W. Mayer",
+  collaboration = "",
+  title =        "Metastable SiGe{C} formation by solid phase epitaxy",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Applied Physics Letters",
+  volume =       "63",
+  number =       "20",
+  pages =        "2786--2788",
+  keywords =     "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
+                 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
+                 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
+                 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
+                 EPITAXY; AMORPHIZATION",
+  URL =          "http://link.aip.org/link/?APL/63/2786/1",
+  doi =          "10.1063/1.110334",
+}
+
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
@@ -2355,8 +2395,7 @@
                  Netherlands",
   title =        "Boron implantations in silicon: {A} comparison of
                  charge carrier and boron concentration profiles",
-  journal =      "Applied Physics A: Materials Science \&
-                 Processing",
+  journal =      "Applied Physics A: Materials Science \& Processing",
   publisher =    "Springer Berlin / Heidelberg",
   ISSN =         "0947-8396",
   keyword =      "Physics and Astronomy",
@@ -2518,6 +2557,28 @@
                  quasi-direct one",
 }
 
+@Conference{powell93,
+  author =       "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
+                 Ek and S. S. Iyer",
+  collaboration = "",
+  title =        "Stability of strained Si[sub 1 - y]{C}[sub y] random
+                 alloy layers",
+  publisher =    "AVS",
+  year =         "1993",
+  journal =      "J. Vac. Sci. Technol. B",
+  volume =       "11",
+  number =       "3",
+  pages =        "1064--1068",
+  location =     "Ottawa (Canada)",
+  keywords =     "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
+                 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
+                 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
+                 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
+  URL =          "http://link.aip.org/link/?JVB/11/1064/1",
+  doi =          "10.1116/1.587008",
+  notes =        "substitutional c in si by mbe",
+}
+
 @Article{osten99,
   author =       "H. J. Osten and J. Griesche and S. Scalese",
   collaboration = "",
@@ -2535,7 +2596,7 @@
                  compounds",
   URL =          "http://link.aip.org/link/?APL/74/836/1",
   doi =          "10.1063/1.123384",
-  notes =        "substitutional c in si",
+  notes =        "substitutional c in si by mbe",
 }
 
 @Article{hohenberg64,
@@ -2587,6 +2648,24 @@
                  si, dft",
 }
 
+@Article{yagi02,
+  title =        "Phosphorous Doping of Strain-Induced
+                 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
+                 by Low-Temperature Chemical Vapor Deposition",
+  author =       "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
+                 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "41",
+  number =       "Part 1, No. 4B",
+  pages =        "2472--2475",
+  numpages =     "3",
+  year =         "2002",
+  URL =          "http://jjap.jsap.jp/link?JJAP/41/2472/",
+  doi =          "10.1143/JJAP.41.2472",
+  publisher =    "The Japan Society of Applied Physics",
+  notes =        "experimental charge carrier mobility in strained si",
+}
+
 @Article{chang05,
   title =        "Electron Transport Model for Strained Silicon-Carbon
                  Alloy",
@@ -2600,7 +2679,7 @@
   URL =          "http://jjap.ipap.jp/link?JJAP/44/2257/",
   doi =          "10.1143/JJAP.44.2257",
   publisher =    "The Japan Society of Applied Physics",
-  notes =        "enhance of electron mobility in starined si",
+  notes =        "enhance of electron mobility in strained si",
 }
 
 @Article{osten97,