reply and text of defect combos

[lectures/latex.git] / posic / publications / defect_combos.tex

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index 1c8db1e..816a72d 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -89,7 +89,7 @@ Migration and recombination pathways have been investigated utilizing the constr
 While not guaranteed to find the true minimum energy path, the method turns out to identify reasonable pathways for the investigated structures.\r
 The defect formation energy $E-N_{\text{Si}}\mu_{\text{Si}}-N_{\text{C}}\mu_{\text{C}}$ is defined by choosing SiC as a particle reservoir for the C impurity, i.e. the chemical potentials are determined by the cohesive energies of a perfect Si and SiC supercell after ionic relaxation.\r
 %In the same way defect formation energies are determined in the article\cite{dal_pino93} used for comparison.\r
-This corresponds to the definition utilized in the article used for comparison\cite{dal_pino93}.\r
+This corresponds to the definition utilized in another study on C defects in Si\cite{dal_pino93} that we compare our results to.\r
 The binding energy of a defect pair is given by the difference of the formation energy of the complex and the sum of the two separated defect configurations.\r
 %Accordingly, energetically favorable configurations show binding energies below zero while non-interacting isolated defects result in a binding energy of zero.\r
 Accordingly, energetically favorable configurations result in binding energies below zero while unfavorable configurations show positive values for the binding energy.\r
@@ -504,7 +504,7 @@ Fig.~\ref{fig:dc_si-s} shows the binding energies of pairs of C$_{\text{s}}$ and
 %The binding energy quickly drops to zero.\r
 %The LJ fit estimates almost zero interaction already at \unit[0.6]{nm}, indicating a low interaction capture radius of the defect pair.\r
 As can be seen, the interaction strength, i.e. the absolute value of the binding energy, quickly drops to zero with increasing separation distance.
-Almost zero interaction may be assumed already at \unit[0.5-0.6]{nm}, indicating a low interaction capture radius of the defect pair.
+Almost zero interaction may be assumed already at distances about \unit[0.5-0.6]{nm}, indicating a low interaction capture radius of the defect pair.
 In IBS highly energetic collisions are assumed to easily produce configurations of defects exhibiting separation distances exceeding the capture radius.\r
 For this reason C$_{\text{s}}$ without a Si$_{\text{i}}$ DB located within the immediate proximity, which is, thus, unable to form the thermodynamically stable C$_{\text{i}}$ \hkl<1 0 0> DB, constitutes a most likely configuration to be found in IBS.\r
 \r