alpha

[lectures/latex.git] / posic / talks / defense.tex

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index e0f334d..ba3da32 100644 (file)
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -648,10 +648,10 @@ r = \unit[2--4]{nm}
  \end{itemize}
  $\Rightarrow$ mobile {\color{red}\ci} opposed to
  stable {\color{blue}\cs{}} configurations
-\item Strained silicon \& Si$_{1-y}$C$_y$ heterostructures
+\item Strained Si$_{1-y}$C$_y$/Si heterostructures
       {\tiny\color{gray}/Strane~et~al./Guedj~et~al./}
  \begin{itemize}
-  \item Initial {\color{blue}coherent} SiC precipitates (tensile strain)
+  \item Initial {\color{blue}coherent} SiC structures (tensile strain)
   \item Incoherent SiC (strain relaxation)
  \end{itemize}
 \end{itemize}
@@ -1056,7 +1056,7 @@ Note: Change in orientation
 \begin{itemize}
  \item Bond-centered configuration unstable\\
        $\rightarrow$ \ci{} \hkl<1 1 0> dumbbell
- \item Minima of the \hkl[0 0 -1] to \hkl[0 -1 0] transition\\
+ \item Minimum of the \hkl[0 0 -1] to \hkl[0 -1 0] transition\\
        $\rightarrow$ \ci{} \hkl<1 1 0> DB
 \end{itemize}
 \vspace{0.1cm}
@@ -1561,7 +1561,7 @@ $\rightarrow$ Consider $V_2$ and $V_3$
 \begin{minipage}{6.1cm}
 \scriptsize
 \underline{Low C concentration --- {\color{red}$V_1$}}\\[0.1cm]
-\hkl<1 0 0> C-Si dumbbell dominated structure
+\ci{} \hkl<1 0 0> dumbbell dominated structure
 \begin{itemize}
  \item Si-C bumbs around \unit[0.19]{nm}
  \item C-C peak at \unit[0.31]{nm} (expected in 3C-SiC):\\
@@ -1573,7 +1573,7 @@ $\rightarrow$ Consider $V_2$ and $V_3$
 \begin{minipage}{6cm}
 \centering
 Formation of \ci{} dumbbells\\
-C atoms in proper 3C-SiC distance first
+C atoms separated as expected in 3C-SiC
 \end{minipage}
 }}
 \end{pspicture}\\[0.1cm]
@@ -1621,7 +1621,7 @@ Amorphous SiC-like phase
 \begin{minipage}{6.1cm}
 \scriptsize
 \underline{Low C concentration --- {\color{red}$V_1$}}\\[0.1cm]
-\hkl<1 0 0> C-Si dumbbell dominated structure
+\ci{} \hkl<1 0 0> dumbbell dominated structure
 \begin{itemize}
  \item Si-C bumbs around \unit[0.19]{nm}
  \item C-C peak at \unit[0.31]{nm} (expected in 3C-SiC):\\
@@ -1692,7 +1692,7 @@ No rearrangement/transition into 3C-SiC
 \vspace{0.2cm}
 
 {\bf Time scale problem of MD}\\[0.2cm]
-Precise integration \& thermodynamic sampling\\
+Minimize integration error \& precise thermodynamic sampling\\
 $\Rightarrow$ $\Delta t \ll \left( \max{\omega} \right)^{-1}$,
               $\omega$: vibrational mode\\
 $\Rightarrow$ {\color{red}\underline{Slow}} phase space propagation\\[0.2cm]
@@ -1775,7 +1775,8 @@ equilibrium properties
  \underline{Si-C bonds:}
  \begin{itemize}
   \item Vanishing cut-off artifact (above $1650\,^{\circ}\mathrm{C}$)
-  \item Structural change: C-Si \hkl<1 0 0> $\rightarrow$ C$_{\text{sub}}$
+  \item Structural change: \ci{} \hkl<1 0 0> DB $\rightarrow$
+        {\color{blue}\cs{}}
  \end{itemize}
  \underline{Si-Si bonds:}
  {\color{blue}Si-C$_{\text{sub}}$-Si} along \hkl<1 1 0>
@@ -1783,17 +1784,11 @@ equilibrium properties
  \underline{C-C bonds:}
  \begin{itemize}
   \item C-C next neighbour pairs reduced (mandatory)
-  \item Peak at 0.3 nm slightly shifted
-        \begin{itemize}
-         \item C-Si \hkl<1 0 0> combinations (dashed arrows)\\
-               $\rightarrow$ C-Si \hkl<1 0 0> \& C$_{\text{sub}}$
-               combinations (|)\\
-               $\rightarrow$ pure {\color{blue}C$_{\text{sub}}$ combinations}
-               ($\downarrow$)
-         \item Range [|-$\downarrow$]:
-               {\color{blue}C$_{\text{sub}}$ \& C$_{\text{sub}}$
-               with nearby Si$_{\text{I}}$}
-        \end{itemize}
+  \item Peak at 0.3 nm slightly shifted\\[0.05cm]
+        $\searrow$ \ci{} combinations (dashed arrows)\\
+        $\nearrow$ \ci{} \hkl<1 0 0> \& {\color{blue}\cs{} combinations} (|)\\
+        $\nearrow$ \ci{} \hkl<1 0 0> \& \cs{} combinations (|)\\[0.05cm]
+        Range [|-$\downarrow$]: {\color{blue}\cs{} \& \cs{} with nearby \si}
  \end{itemize}
 \end{minipage}
 
@@ -1834,16 +1829,11 @@ equilibrium properties
  \begin{itemize}
   \item C-C next neighbour pairs reduced (mandatory)
   \item Peak at 0.3 nm slightly shifted
-        \begin{itemize}
-         \item C-Si \hkl<1 0 0> combinations (dashed arrows)\\
-               $\rightarrow$ C-Si \hkl<1 0 0> \& C$_{\text{sub}}$
-               combinations (|)\\
-               $\rightarrow$ pure {\color{blue}C$_{\text{sub}}$ combinations}
-               ($\downarrow$)
-         \item Range [|-$\downarrow$]:
-               {\color{blue}C$_{\text{sub}}$ \& C$_{\text{sub}}$
-               with nearby Si$_{\text{I}}$}
-        \end{itemize}
+  \item Peak at 0.3 nm slightly shifted\\[0.05cm]
+        $\searrow$ \ci{} combinations (dashed arrows)\\
+        $\nearrow$ \ci{} \hkl<1 0 0> \& {\color{blue}\cs{} combinations} (|)\\
+        $\nearrow$ \ci{} \hkl<1 0 0> \& \cs{} combinations (|)\\[0.05cm]
+        Range [|-$\downarrow$]: {\color{blue}\cs{} \& \cs{} with nearby \si}
  \end{itemize}
 \end{minipage}