nearly finished

[lectures/latex.git] / posic / talks / defense.tex

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index bfd92d0..e1c938b 100644 (file)
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -335,15 +335,15 @@ SiC thin films by MBE \& CVD
 
 \vspace{-0.5cm}
 
-\begin{center}
-\color{red}
-\framebox{
-{\footnotesize\color{black}
- Mismatch in \underline{thermal expansion coeefficient}
- and \underline{lattice parameter} w.r.t. substrate
-}
-}
-\end{center}
+%\begin{center}
+%\color{red}
+%\framebox{
+%{\footnotesize\color{black}
+% Mismatch in \underline{thermal expansion coeefficient}
+% and \underline{lattice parameter} w.r.t. substrate
+%}
+%}
+%\end{center}
 
 \vspace{0.1cm}
 
@@ -373,16 +373,25 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{minipage}
 }
 \begin{minipage}{5.5cm}
-\begin{center}
-{\footnotesize
-No surface bending effects\\
-High areal homogenity\\[0.1cm]
-$\Downarrow$\\[0.1cm]
-Synthesis of large area SiC films possible
-}
-\end{center}
+ \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
+ \begin{center}
+ {\tiny
+  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
+ }
+ \end{center}
 \end{minipage}
 
+%\begin{minipage}{5.5cm}
+%\begin{center}
+%{\footnotesize
+%No surface bending effects\\
+%High areal homogenity\\[0.1cm]
+%$\Downarrow$\\[0.1cm]
+%Synthesis of large area SiC films possible
+%}
+%\end{center}
+%\end{minipage}
+
 \end{slide}
 
 \begin{slide}
@@ -451,8 +460,6 @@ Synthesis of large area SiC films possible
 
 \end{slide}
 
-% contents
-
 \begin{slide}
 
 \headphd
@@ -714,6 +721,8 @@ r = \unit[2--4]{nm}
 
 \begin{slide}
 
+% contents
+
 \headphd
 {\large\bf
  Outline
@@ -2224,10 +2233,12 @@ High C \& low T implants
 
 \headphd
 {\large\bf
- Summary / Conclusions
+ Summary and Conclusions
 }
 
-\scriptsize
+\footnotesize
+
+\vspace{0.1cm}
 
 \framebox{
 \begin{minipage}{12.3cm}
@@ -2237,19 +2248,12 @@ High C \& low T implants
         \begin{itemize}
          \item Point defects excellently / fairly well described
                by DFT / EA
-         \item C$_{\text{sub}}$ drastically underestimated by EA
-         \item EA predicts correct ground state:
-               C$_{\text{sub}}$ \& \si{} $>$ \ci{}
-         \item Identified migration path explaining
-               diffusion and reorientation experiments by DFT
-         \item EA fails to describe \ci{} migration:
-               Wrong path \& overestimated barrier
+         \item Identified \ci{} migration path
+         \item EA drastically overestimates the diffusion barrier
         \end{itemize}
    \item Combinations of defects
          \begin{itemize}
           \item Agglomeration of point defects energetically favorable
-                by compensation of stress
-          \item Formation of C-C unlikely
           \item C$_{\text{sub}}$ favored conditions (conceivable in IBS)
           \item \ci{} \hkl<1 0 0> $\leftrightarrow$ \cs{} \& \si{} \hkl<1 1 0>\\
                 Low barrier (\unit[0.77]{eV}) \& low capture radius
@@ -2262,12 +2266,11 @@ High C \& low T implants
 \begin{minipage}[t]{12.3cm}
  \underline{Pecipitation simulations}
  \begin{itemize}
-  \item High C concentration $\rightarrow$ amorphous SiC like phase
   \item Problem of potential enhanced slow phase space propagation
   \item Low T $\rightarrow$ C-Si \hkl<1 0 0> dumbbell dominated structure
   \item High T $\rightarrow$ C$_{\text{sub}}$ dominated structure
   \item High T necessary to simulate IBS conditions (far from equilibrium)
-  \item Precipitation by successive agglomeration of \cs (epitaxy)
+  \item Increased participation of \cs{} in the precipitation process
   \item \si{}: vehicle to form \cs{} \& supply of Si \& stress compensation
         (stretched SiC, interface)
  \end{itemize}
@@ -2275,7 +2278,7 @@ High C \& low T implants
 }
 
 \begin{center}
-{\color{blue}
+{\color{blue}\bf
 \framebox{Precipitation by successive agglomeration of \cs{}}
 }
 \end{center}
@@ -2284,9 +2287,10 @@ High C \& low T implants
 
 \begin{slide}
 
- {\large\bf
-  Acknowledgements
- }
+\headphd
+{\large\bf
+ Acknowledgements
+}
 
  \vspace{0.1cm}
 
@@ -2296,32 +2300,35 @@ High C \& low T implants
 
  \underline{Augsburg}
  \begin{itemize}
-  \item Prof. B. Stritzker (accomodation at EP \RM{4})
-  \item Ralf Utermann (EDV)
+  \item Prof. B. Stritzker
+  \item Prof. F. Haider
+  \item Ralf Utermann
  \end{itemize}
  
  \underline{Berlin/Brandenburg}
  \begin{itemize}
-  \item PD Volker Eyert (Ref)
+  \item PD V. Eyert
  \end{itemize}
  
  \underline{Helsinki}
  \begin{itemize}
-  \item Prof. K. Nordlund (MD)
+  \item Prof. K. Nordlund
  \end{itemize}
  
  \underline{Munich}
  \begin{itemize}
-  \item Bayerische Forschungsstiftung (financial support)
+  \item Bayerische Forschungsstiftung
  \end{itemize}
  
  \underline{Paderborn}
  \begin{itemize}
-  \item Prof. J. Lindner (SiC)
-  \item Prof. G. Schmidt (DFT + financial support)
-  \item Dr. E. Rauls (DFT + SiC)
+  \item Prof. J. Lindner
+  \item Prof. G. Schmidt
+  \item Dr. E. Rauls
  \end{itemize}
 
+\vspace{0.1cm}
+
 \begin{center}
 \framebox{
 \bf Thank you for your attention!