\section{Conclusions concerning the SiC conversion mechanism}
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Obtained results for separated point defects in Si are in good agreement to previous theoretical work on this subject, both for intrinsic defects \cite{leung99,al-mushadani03} as well as for C point defects \cite{dal_pino93,capaz94}.
The ground-state configurations of these defects, i.e. the Si$_{\text{i}}$ \hkl<1 1 0> and C$_{\text{i}}$ \hkl<1 0 0> DB, are reproduced and compare well to previous findings of theoretical investigations on Si$_{\text{i}}$ \cite{leung99,al-mushadani03} as well as theoretical \cite{dal_pino93,capaz94,burnard93,leary97,jones04} and experimental \cite{watkins76,song90} studies on C$_{\text{i}}$.
A quantitatively improved activation energy of \unit[0.9]{eV} for a qualitatively equal migration path based on studies by Capaz et.~al.~\cite{capaz94} to experimental values \cite{song90,lindner06,tipping87} ranging from \unit[0.70-0.87]{eV} reinforce their derived mechanism of diffusion for C$_{\text{i}}$ in Si
Thus, elevated temperatures might lead to thermodynamically unstable configurations of C$_{\text{s}}$ and a remaining Si atom in the near interstitial lattice, which is supported by the result of an {\em ab initio} molecular dynamics run.
%Thus, due to missing attractive interaction forces driving the system to form C-Si \hkl<1 0 0> dumbbell interstitial complexes substitutional C, while thermodynamically not stable, constitutes a most likely configuration occuring in IBS, a process far from equlibrium.
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% todo
% maybe move above stuff to conclusion chapter, at least shorten!
% see remember in sic chapter
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