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[lectures/latex.git] / posic / thesis / intro.tex

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@@ -31,6 +31,7 @@ In chapter \ref{chapter:sic_rev} a review of the Si/C compound is given includin
 Chapter \ref{chapter:basics} introduces some basics and internals of the utilized atomistic simulations as well as special methods of application.
 Details of the simulation and associated test calculations are presented in chapter \ref{chapter:simulation}.
 In chapter \ref{chapter:defects} results of investigations of single defect configurations, structures of comnbinations of two individual defects as well as some selected diffusion pathways in silicon are shown.
+These allow to draw conclusions with respect to the SiC precipitation mechanism in Si.
 More complex systems aiming to model the transformation of C incorporated in bulk Si into a SiC nucleus are examined in chapter \ref{chapter:md}.
 Finally a summary and some concluding remarks are given in chapter \ref{chapter:summary}.