The consequential superposition of these defects and the high amounts of damage generate new displacement arrangements for the C-C as well as for the Si-C pair distances, which become hard to categorize and trace and obviously lead to a broader distribution.
Short range order indeed is observed, i.e.\ the large amount of strong neighbored C-C bonds at \unit[0.15]{nm} as expected in graphite or diamond and Si-C bonds at \unit[0.19]{nm} as expected in SiC, but only hardly visible is the long range order.
This indicates the formation of an amorphous SiC-like phase.
-In fact the resulting Si-C and C-C radial distribution functions compare quite well with these obtained by cascade amorphized and melt-quenched amorphous SiC using a modified Tersoff potential~\cite{gao02}.
+In fact, the resulting Si-C and C-C radial distribution functions compare quite well with these obtained by cascade amorphized and melt-quenched amorphous SiC using a modified Tersoff potential~\cite{gao02}.
In both cases, i.e.\ low and high C concentrations, the formation of 3C-SiC fails to appear.
With respect to the precipitation model, the formation of C$_{\text{i}}$ \hkl<1 0 0> DBs indeed occurs for low C concentrations.
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