Further studies revealed the possibility to form buried layers of SiC by IBS at moderate substrate and anneal temperatures \cite{lindner95}.
Different doses of C ions with an energy of \unit[180]{keV} were implanted at \unit[330-440]{$^{\circ}$C} and annealed at \unit[1200]{$^{\circ}$C} or \unit[1250]{$^{\circ}$C} for \unit[5-10]{h}.
For a critical dose, which was found to depend on the orientation of the Si substrate, corresponding to a \unit[50]{at.\%} C concentration at the implantation peak, C atoms get redistributed appropriately resulting in the formation of a stoichiometric buried layer of SiC exhibiting a well-defined interface to the Si host matrix.
-Redistribution is hindered for overstoichiometric doses ... and higher implantation energies resulting in randomly distributed SiC precipitates ...
+Redistribution of the excess C in case of overstoichiometric implantations is not observed.
+Higher implantation energies were found to result in layers of variable composition exhibiting randomly distributed SiC precipitates.
high t -> direct SiC formation -> no redistribution ...