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[lectures/latex.git] / posic / thesis / sic.tex

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@@ -217,6 +217,7 @@ However, the frequent occurence of defects such as dislocations, twins and doubl
 Solving this issue remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
 
 \subsection{Ion beam synthesis of cubic silicon carbide}
+\label{subsection:ibs}
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.