Thus, the EA potential is considered an appropriate choice for the current study concerning the accurate description of the energetics of interfaces.
Furthermore, since the calculated interfacial energy is located in the lower part of the experimental range, the obtained interface structure might resemble an authentic configuration of an energetically favorable interface structure of a 3C-SiC precipitate in c-Si.
-% todo - nice to reproduce this value!
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\subsubsection{Stability of the precipitate}
To investigate the stability of the precipiate, which is assumed to be stable even at temperatures above the Si melting temperature, the configuration is heated up beyond the critical point, at which the Si melting transition occurs.