mainly extended simulation chapter

[lectures/latex.git] / posic / thesis / summary_outlook.tex

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 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
+In a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
+To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out.
+In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quatum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential.
+Shortcomings of the computationally efficient though less accurate classical potential approach compared to the quantum-mechanical treatment are revealed.
+The study proceeds investigating combinations of defect structures and related diffusion processes exclusively by the first-principles method.
+The applicability of the utilized bond order potential for subsequent MD simulations is discussed.
+Conclusions on the precipitation based on the DFT results are drawn.
+In the second part, classical potential MD simulations are performed, which try to directly reproduce the precipitation.
+Next to the shortcomings of the potential, quirks inherent to MD are discussed and a workaround is proposed.
+Although direct formation of SiC fails to appear, the results suggest a mechanism of precipitation, which is consistent with previous quantum-mechanical conclusions as well as experimental findings.
+
+Obtained results 
+
+
+
 
 Experimental studies revealed increased implantation temperatures to be more efficient than postannealing methods for the formation of topotactically aligned precipitates \cite{kimura82,eichhorn02}.
 In particular, restructuring of strong C-C bonds is affected \cite{deguchi92}, which preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements.